TM130DZ-24 MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb.1999 MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-24,-2H HIGH POWER GENERAL USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TM130DZ/CZ/PZ-24,-2H

  • VRRM Repetitive peak reverse voltage
  • VDRM Repetitive peak off-state voltage
  • DOUBLE ARMS
  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers (DZ Type) (DZ Type) (Bold line is connective bar.) 3–φ6.5 4–M8 A1 K1 A2 K2 18 16 18 16 32 30 68.5 68.5 150 Tab#110, t=0.5 CR1 K1 CR2 (DZ) (CZ) (PZ) CR1 K1 K2 CR2 CR1 K1 K2 CR2 206 LABEL

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-24,-2H HIGH POWER GENERAL USE INSULATED TYPE 1200 1350 960 1200 1350 960 1600 1700 1280 1600 1700 1280 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180° conduction, T C=78°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=1.0A, Tj=125°C Charged part to case Main terminal screw M8 Mounting screw M6 Typical value Ratings 205 130 2600 2.8 × 10 100 3.0 5.0 4.0 –40~+125 –40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 Symbol I T (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W MΩ Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Test conditions T j=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=390A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Min. 500 0.25 Typ. Max. 1.5 3.0 100 0.22 0.1

Feb.1999 –110 –310 –210 010 010 110 110 010 410 310 210 110 –110 410 310 210 110 7050302075320 400 3200 101 100 800 1200 1600 2000 2400 2800 753275327532 VGT=3.0V IGT= 100mA IFGM=4.0A PGM=10WVFGM=10V VGD=0.25V PG(AV)= 3.0WTj=25°C 753275327532 0.25 7532 0.05 0.10 0.15 0.20 0.6 Tj=125°C 0 0 200 200 160 40 80 120 120 160 θ=30° 120° 90° 180° θ 360° 60° 150 50 0 120 20040 110 130 160 θ=30° 60° 90° θ 360° 180°120°RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT ON-STATE CURRENT (A) SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) GATE VOLTAGE (V)AVERAGE ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) CASE TEMPERATURE (°C) TIME (s)GATE CURRENT (mA) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-24,-2H HIGH POWER GENERAL USE INSULATED TYPE

Feb.1999 0 0 200 40 400 320 16080 120 240 160 θ=30° 60° 90° θ 360° 270° DC 120° 180° 50 0 32040 130 280120 200 100 110 120 80 160 240 DCθ=30° θ 360° 60° 90° 120° 270° 180° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-24,-2H HIGH POWER GENERAL USE INSULATED TYPE CASE TEMPERATURE (°C)