TLWR992 VAISH | Alldatasheet

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Technical content

Features

 Utilizing one of the worl d’s brightest (AS) AllnGaP technologies (OMA)  High luminous flux  Supreme heat dissipation: R thJP is 90 K/W  High operating temperature: Tamb = - 40 to + 110 °C  Meets SAE and ECE colo r requirements for the automobile industry for color red  Packed in tubes for automatic insertion  Luminous flux, forward voltage and color catego- rized for each tube  Small mechanical tolerances allow precise usage of external reflectors or lightguides  Lead-free device

Applications

Tail-, Stop - and Turn Signals of motor vehicles Replaces small incandescent lamps Traffic signals and signs Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLWR9920 Red, φV > 3000 mlm 45 ° AllnGaP on GaAs TLWR9921 Red, φV > 3500 mlm 45 ° AllnGaP on GaAs TLWR9922 Red, φV > 4000 mlm 45 ° AllnGaP on GaAs

www.vishay.com Document Number 83286 Rev. 1.2, 30-Nov-04 VISHAYTLWR992. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLW.992. Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLW.992. Forward Voltage Classification Parameter Test condition Symbol Value Unit Reverse voltage I R = 100 µAV R 10 V DC Forward current T amb ≤ 85 °C I F 70 mA Surge forward current t p ≤ 10 µsI FSM 0.1 A Power dissipation T amb ≤ 85 °C P V 190 mW Junction temperature T j 125 °C Operating temperature range T amb - 40 to + 110 °C Storage temperature range T stg - 55 to + 110 °C Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature 100 °C/ 30 sec. Tsd 260 °C Thermal resistance junction/ ambient with cathode heatsink of 70 mm2 RthJA 200 K/W Parameter Test condition Part Symbol Min Typ. Max Unit Total flux I F = 70 mA, RthJA = 200 °K/W TLWR9920 φV 3000 3700 mlm TLWR9921 φV 3500 4200 mlm TLWR9922 φV 4000 5000 mlm Luminous intensity/Total flux I F = 70 mA, RthJA = 200 °K/W I V/φV 0.7 mcd/ mlm Dominant wavelength I F = 70 mA, RthJA = 200 °K/W λd 611 615 634 nm Peak wavelength I F = 70 mA, RthJA = 200 °K/W λp 624 nm Angle of half intensity I F = 70 mA, RthJA = 200 °K/W ϕ ± 45 deg Total included angle 90 % of Total Flux Captured ϕ0.9V 100 deg Forward voltage I F = 70 mA, RthJA = 200 °K/W V F 1.83 2.5 3.03 V Reverse voltage I R = 100 µAV R 10 20 V Temperature coefficient < λd IF = 70 mA TC λd 17 nm/K Temperature coefficient VF IF = 70 mA, T > - 25 °C TC VF - 2.9 mV/K Group Forward Voltage (V) min max Y 1.83 2.07 Z 1.95 2.19 0 2.07 2.31 1 2.19 2.43 2 2.31 2.55 3 2.43 2.67 4 2.55 2.79 5 2.67 2.91 6 2.79 3.03

VISHAY TLWR992. Document Number 83286 Rev. 1.2, 30-Nov-04 Vishay Semiconductors www.vishay.com Package Dimensions in mm 15984

www.vishay.com Document Number 83286 Rev. 1.2, 30-Nov-04 VISHAYTLWR992. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423