TLRE50T

TLSE50T TOSHIBA | Alldatasheet

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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 1 TOSHIBA InGaA ℓP LED TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T, TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T Panel Circuit Indicators /Gb7/G20φ3 mm package /Gb7/G20InGaAℓP technology /Gb7/G20All plastic mold type /Gb7/G20Transparent lens /Gb7/G20Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) /Gb7/G20High intensity light emission /Gb7/G20Excellent low current light output /Gb7/G20Applications: message boards, security devices and dashboard displays Line-up Unit: mm JEDEC ― JEITA ― TOSHIBA 4-3E1A Weight: 0.14 g Product Name Color Material TLRE50T Red TLRME50T Red TLSE50T Red TLOE50T Orange TLYE50T Yellow TLPYE50T Pure Yellow TLGE50T Green TLFGE50T Green TLPGE50T Pure Green PInGaA/G6c

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 2 Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Product Name Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) Operating Temperature Topr (°C) Storage Temperature Tstg (°C) TLRE50T 50 4 120 TLRME50T 50 4 120 TLSE50T 50 4 120 TLOE50T 50 4 120 TLYE50T 50 4 120 TLPYE50T 50 4 120 TLGE50T 50 4 120 TLFGE50T 50 4 120 TLPGE50T 50 4 120 /G2d40~100 /G2d40~120 Electrical and Optical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name /G6cd /G6cP /G44/G6c I F Min Typ. I F Typ. Max I F Max V R TLRE50T 630 (644) 20 20 850 1800 20 1.9 2.4 20 50 4 TLRME50T 626 (636) 23 20 850 2200 20 1.9 2.4 20 50 4 TLSE50T 613 (623) 20 20 1530 3500 20 1.9 2.4 20 50 4 TLOE50T 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4 TLYE50T 587 (590) 17 20 1530 3500 20 2.0 2.4 20 50 4 TLPYE50T 580 (583) 14 20 850 2500 20 2.0 2.4 20 50 4 TLGE50T 571 (574) 17 20 476 1500 20 2.0 2.4 20 50 4 TLFGE50T 565 (568) 15 20 272 1000 20 2.0 2.4 20 50 4 TLPGE50T 558 (562) 14 20 153 600 20 2.1 2.4 20 50 4 Unit nm mA mcd mA V mA /G6dA V Precautions Please be careful of the following: /Gb7/G20Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) /Gb7/G20If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. /Gb7/G20This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 3 TLRE50T 20 /G2d20 80 0.1 0.3 0.5 0 40 60 700 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 680 660 640 620600580 101 100 10000 1000 Ta /G3d 25°C 100 120 20 40 60 80 100 1.6 100 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 4 TLRME50T 1.6 100 Ta /G3d 25°C 700 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 680 660 640 620600580 Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 101 100 10000 1000 Ta /G3d 25°C 100 120 20 40 60 80 100 20 /G2d20 80 0.1 0.3 0.5 0 40 60

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 5 TLSE50T 120 20 40 60 80 100 101 100 10000 1000 Ta /G3d 25°C 100 1.6 100 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 680 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 660 640 620 60058056020 /G2d20 80 0.1 0.3 0.5 0 40 60

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 6 TLOE50T 120 20 40 60 80 100 101 100 30000 10000 Ta /G3d 25°C 1000 100 1.6 100 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 660 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 640 620 600 58056054020 /G2d20 80 0.1 0.3 0.5 0 40 60

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 7 TLYE50T 1.6 100 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 120 20 40 60 80 100 660 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 640 620 600 58056054020 /G2d20 80 0.1 0.3 0.5 0 40 60 101 100 10000 1000 Ta /G3d 25°C 100

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 8 TLPYE50T Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 120 20 40 60 80 100 101 100 10000 1000 Ta /G3d 25°C 100 2.0 1.6 2.3 1.7 2.1 100 1.8 1.9 2.2 Ta /G3d 25°C 580540 660 0.8 0.6 1.0 0.2 0.4 560 600 620 640 IF /G3d 20 mA Ta /G3d 25°C 20 /G2d20 80 0.1 0.3 0.5 0 40 60

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 9 TLGE50T 1.6 100 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 120 20 40 60 80 100 640 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 620 600 580 560540520 101 100 5000 1000 Ta /G3d 25°C 100 20 /G2d20 80 0.1 0.3 0.5 0 40 60

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 10 TLFGE50T 2.0 1.6 2.3 1.7 2.1 100 1.8 1.9 2.2 Ta /G3d 25°C Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 120 20 40 60 80 100 560520 640 0.8 0.6 1.0 0.2 0.4 540 580 600 620 IF /G3d 20 mA Ta /G3d 25°C 20 /G2d20 80 0.1 0.3 0.5 0 40 60 101 100 5000 1000 Ta /G3d 25°C 100

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 11 TLPGE50T Relative luminous intensity Forward voltage V F (V) IF – VF Forward current I F (mA) Forward current I F (mA) IV – IF Luminous intensity I V (mcd) Case temperature Tc (°C) IV – Tc Relative luminous intensity I V Wavelength /G6c ( n m ) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Radiation pattern Ta /G3d 25°C 30/Gb0 0/Gb0 60/Gb0 90° 90/Gb0 30/Gb0 60/Gb0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 80/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 101 100 10000 1000 Ta /G3d 25°C 100 120 20 40 60 80 100 20 /G2d20 80 0.1 0.3 0.5 0 40 60 640 0.8 0.6 1.0 0.2 0.4 IF /G3d 20 mA Ta /G3d 25°C 620 600 580 560540520 1.6 100 Ta /G3d 25°C

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T 2002-01-17 12 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE