TLP629_07 TOSHIBA | Alldatasheet

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TLP629,TLP629−2,TLP629−4 2007-10-01 1 TOSHIBA Photocoupler GaAs Ired & Photo −T ransistor TLP629,TLP629−2,TLP629−4 Telecommunication Office Machine Telephone Use Equipment The TOSHIBA TLP629, −2, and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP629−2 offers two isolated channels in an eight lead plastic DIP, while the TLP629−4 provides four isolated channels in a sixteen plastic DIP. This is suitable for application of DC input current up to 150mA.

  • I F maximum rating: 150mA
  • Collector−emitter voltage: 55V (min.)
  • Current transfer ratio: 25% (min.) (IF=20mA)
  • Isolation voltage: 5000Vrms (min.)
  • UL recognized: UL1577, file no. E67349
  • BSI approved: BS EN60065:2002, certificate no.7426 BS EN60950-1:2002, certificate no.7427 Pin Configurations (top view) TOSHIBA 11 −5B2 Weight: 0.26 g TOSHIBA 11 −10C4 Weight: 0.54 g TOSHIBA 11 −20A3 Weight: 1.1 g Unit in mm

TLP629,TLP629−2,TLP629−4 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP629 TLP629 −2,4 Unit Forward current IF 150 mA Forward current derating ΔIF / °C −1.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP 1 (100μ s pulse, 100pps) A Reverse voltage VR 5 V LED Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 80 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit, Ta ≥ 25°C) ΔP Detector Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 250 200 mW Total package power dissipation derating (Ta≥25°C) ΔP Isolation voltage (Note 1) BV S 5000 (AC, 1min., RH ≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 20 120 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

TLP629,TLP629−2,TLP629−4 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF I F = 100 mA — 1.4 1.7 V Forward current IF V F = 0.7 V — 2.5 20 μA Reverse current IR V R = 5 V — — 10 μA LED Capacitance C T V = 0, f = 1 MHz — 50 — pF Collector−emitter breakdown voltage V(BR) CEO I C = 0.5 mA 55 — — V Emitter−collector breakdown voltage V(BR) ECO I E = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C — 2 50 μA Detector Capacitance collector to emitter CCE V = 0, f = 1 MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit IC / IF IF = 20 mA, VCE = 1 V 25 — — Current transfer ratio IC / IF (high) IF = 100 mA, VCE = 1 V 20 — 80 IC = 2.4 mA, IF = 20 mA — — 0.4 Collector−emitter saturation voltage V CE (sat) IC = 2.4 mA, IF = 100 mA — — 0.4 V Off−state collector current IC(off) V F = 0.7V, VCEO = 24 V — 1 1.0 μA Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance RS VS = 500 V 5×10 — Ω AC, 1 minute 5000 — — AC, 1 second, in oil — 10000 — Vrms Isolation voltage BVS DC, 1 minute, in oil — 10000 — Vdc

TLP629,TLP629−2,TLP629−4 2007-10-01 4 Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time tr — 2 — Fall time tf — 3 — Turn−on time ton — 3 10 Turn−off time toff VCC = 10 V, IC = 2 mA RL = 100Ω — 3 10 μs Turn−on time tON — 2 — Storage time ts — 15 — Turn−off time tOFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA — 25 — μs Fig. 1 Switching time test circuit

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TLP629,TLP629−2,TLP629−4 2007-10-01 6

TLP629,TLP629−2,TLP629−4 2007-10-01 7 RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • GaAs(Gallium Arsenide) is used in this product. The dus t or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.