TLP626-4

TLP626 TOSHIBA | Alldatasheet

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TOSHIBA TLP626,TLP626-2,TLP626-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP626, TLP626-2, TLP626-4 i i PROGRAMMABLE CONTROLLERS Unit in mm AC/DC-INPUT MODULE rar TELECOMMUNICATION > TLP626 The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared | Is emitting diodes connected in inverse parallel, optically coupled to a Pia photo-transistor. 4584025 3 + The TLP626-2 offers two isolated channels in an eight lead plastic Ei DIP, while the TLP626-4 provides four isolated channels in a sixteen 8 plastic DIP. S oy 122035) {| g o2si © Collector-Emitter Voltage : 55V (Min.) on eer e@ Current Transfer Ratio 2sizoas 8” . CURRENT TRANSFER RATIO (Min.) | yarkinc | [rosHipa115B2 CLASSI- Ta=25°C \\Ta= —25~75°C| OF ~ Weight : 0.26g HICATION Jtp=timA fp=+0.5ma| Ip=tima | OAS Vop=0.5V Won=1.5V | Vop=0.5V — TD Rank BV 200% 100% 100% 2 100% BY, Blank 4 @ Isolation Voltage : 5000Vims Min. Teae © UL Recognized : ULI1577, File No. E67349 oe \\ il a e BSI Approved : BS EN60065 : 1994 Certificate No.7426 | 'e BS EN60950 : 1992 Certificate No.7427 izs018 ar ewwect @ Note : Application type name for certification test, esses | 1185-800 please use standard product type name, i.e. 2844025 al + + TLP626 (BV) : TLP626 oe PIN CONFIGURATIONS (TOP VIEW) TOSHIBA __11-10C4 TLP626 TLP626-2 TLP626-4 Weight : 0.54g 626-4 1: ANODE 3q He 30 H 14 77 TT 2 : CATHODE werz02s 8 pass ANODE 1,3 : ANODE sq H 12 8 3 : EMITTER CATHODE Ez q H 025°, 4: COLLECTOR 29/4 : CATHODE 6q O11 e520 le fo ANODE 7d LH 10 re a 5,7 : EMITTER 6,8 : COLLECTOR 8 1% 4 4! 9 1 203 TOSHIBA 11-20A3 1, 3,5,7 : ANODE, CATHODE - 2, 4, 6, 8 : CATHODE, ANODE Weight : 1.1g 9,11, 13,15 : EMITTER 10, 12, 14, 16 : COLLECTOR 1 2001-06-01

TOSHIBA TLP626,TLP626-2,TLP626-4 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL TLP626 TLP626-2 UNIT TLP626-4 Forward Current [me | J ma Forward Current Derating Alp / °C | —0.7 (Ta=39°C)| —0.5 (Ta= 25°C) qQ| Pulse Forward Current 1(100zs pulse, 100pps) £2 [Power Dissipation (1 Circuit) Power Dissipation Derating °, (Ta2 25°C, 1 Cireuity | 4PD / °C | 0 707 mwrc Junstion Temperature Collector-Emitter Voltage Voro % [Bmitter-Collector Voltage Veco & [Collector Current [to fo s2 [Collector Power Dissipation (1 Gireuit) | Po | 150 | 00 | mw Collector Power Dissipation Derating a ° _ _ ° A | (Ta=25°C, 1 Circuit) apel’e 1 to pwerg [Junction Temperamre SS S*d Storage Temperature Range —55~125 Operating Temperature Range —55~100 Lead Soldering Temperature 260 (10s) Total Package Power Dissipation (1 Circuit) Total Package Power Dissipation Derating 6 6 (Ta=25°C, 1 Cireuit) apr l"C 728 “15 fmwrre Isolation Voltage (Note 1) 5000(AC, 1min., RH<60%) (Note 1) Device considered a two terminal : LED side pins shorted together, and DETECTOR side pins shorted together. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL| MIN. | TYP. | MAX. Supply Voltage | veo | — | 5] 2] v | Collector Current ic | — | 1] 20 | ma | Operating Temperature [| Tor [25 | — [25 | *c | 2 2001-06-01

TOSHIBA TLP626,TLP626-2,TLP626-4 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) a | Reverse Current | Ip [We=torv | = | 5 | 20] na | | Capacitance | Or [w=0, tse | — | co | = | or | Collector-Emitter ° «. Emitter-Collector a = io} = & | Coll Dark I ga | Collestor Dark Current | ICBO [Vop=2av, Taxes [= 2] 50a | =) . Capacitance Collector nn pe ‘eure =| #] - [ow COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) Current Transfer Ratio Ic/Ip Rank BV [200 | —_| 1200] en eon A TI Pate t= « | ; Ig=0.5mA, Ip= +1mA | — | — | oa! 1 -Emit! = Sotisation Volta Vow (sat) [Ig=ima, Ip=EimA [= ozl= | v aturation Voltage Rank BV P—1— [04] Off-State Collector Current | Ig (off) |Vr=+0.7V, Von=24V | — | 1] 10] pa | CTR Symmetry "1 IgGp=-ImA)/IgGp=tma) [| 05[ — | 2] — | COUPLED ELECTRICAL CHARACTERISTICS (Ta = -25~75°C) ; Ip=1mA, VoE=0.5V | so] — | — | Current Transfer Ratio Ic/Ip Rank BV [too] — | — | Low Input CTR lic / Ip (low) Tp=0.5mA, VCR=15V | — | so] — | Rank BV [— | 100, — | Ic Ip=Ipe, VoR=5V) —_— <Cl I io) = eee eee I Vv 'C (ratio) Tc1 dp=Ip1, VoE=5V) F1 “Tos CE Ny) 3 2001-06-01

TOSHIBA TLP626,TLP626-2,TLP626-4 ISOLATION CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC TEST CONDITION Vg=0, f= IMHz | = | os] — | pr | | Isolation Resistance | Rg | Vg=soov, xt" to" — | a | [AC 1 minute | 5000 | — | — |, . rms Isolation Voltage BVg | AC, 1 second, in oil | — [10000] — | | Dc, 1 minute, in oil | — [10000] — | vac | SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC TEST CONDITION UNIT |= | s[-| Voo=10V, Ig=2mA |= | s[-| Wty <47kO (Fig) [= | 10 | — | | Storage Time ts | Ws tpn | 50 | Storage Time ts Voc=5V, Ip=+1.6mA | — | 50 | — | HS Fig. 1. SWITCHING OPERATING CONDITIONS Ip Voc a re Ru ts voc Vor Ven 4.5V 0.5V ton torr 4 2001-06-01

TOSHIBA TLP626,TLP626-2,TLP626-4 Ip - Ta . Pc - Ta i “CAAA Es “Eo CEE g Se BEE EEE ao EE ae bee EEE Be NOPE £o “(mw | STITT Be Imre (TTT | Fe DONNIE Se OTS N 2° OOOO zs “AAPA s S\\ NI a ete ANN I Ba aN 2% 5 E LECCE RN

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• UAE rrr FLT Titi titty =20 0 20 40 60 80 100 120 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) I - D Ip — VF F see gtti eee Tie . oH (= SS

3000 POLSE WIDTHS 100; a ———

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TOSHIBA TLP626,TLP626-2,TLP626-4 Ic/Ip - IF Ic — VCE 100 “9 T=" 11111 a SS 8 = 4 Seog er Pomme S00 aN 35 be N 5. i ee ee | eee a At | TTA TT g aeaiill eet z TI CT g eof i |i 3 u

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Sf TT TTT] ta=26°0 2B 29 é 7a ee ae ee PA | ee | eee Bt WE LIT oma FEE g@ 1 LI ——_ 3 eS ETeaTiil Ic ~ Ip Zann oT oo a 03 051 z 5 10 Ta eiw FA = siast EH 0 a FA +A ea == a il i FPR os e LL ye aoc = 2 SS 7 . EEE Ps a A T=. Jem] |] |] | PCA E ERP — eS) oe A || 2 jie re | ee 3 — on — a * sh a a i oot | TTT TT TTT | a | ESSE SESS SESS ETI LEHI BEEEEEEEFEEEEH oot oo EEE O01 03 0.5 1 3 5 10 -20 0 20 40 60 80 100 FORWARD CURRENT Ip (mA) AMBIENT TEMPERATURE Ta (°C) 6 2001-06-01

TOSHIBA TLP626,TLP626-2,TLP626-4 Ip - Ta SWITCHING TIME — RL pee a SS ood TA=25C HA = —— { See ee nee ee ves (11 FET 2 ee voor {IT a ———— 100

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SSS SS SS SS SS SS SS SS _—— a oo os aS SS SS SS SSS PR ====]======—— A ess earl +14 4} + +t a wd TTTTTrTrr tr | a) 0 20 40 60 80 100 120 1 3 5 10 30 «50 100 AMBIENT TEMPERATURE Ta (°C) LOAD RESISTANCE Ry, (kQ) 9.70 7-06-07

TOSHIBA TLP626,TLP626-2,TLP626-4 RESTRICTIONS ON PRODUCT USE ooov07e8¢ @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 8 2001-06-01