DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
TLP624,TLP624−2,TLP624−4 2007-10-01 1 TOSHIBA Photocoupler GaAs Ired & Photo −T ransistor TLP624,TLP624−2,TLP624−4 Programmable Controllers AC/DC−Input Module Telecommunication The TOSHIBA TLP624, −2 and −4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo−transistor. The TLP624−2 offers two isolated channels in an eight lead plastic DIP, while the TLP624−4 provides four isolated channels in a sixteen plastic DIP.
- Collector−emitter voltage: 55V min.
- Current transfer ratio
- Isolation voltage: 5000V rms min.
- UL recognized: UL1577, file No.E67349
- BSI approved: BS EN60065: 2002 Certificate No.7426 BS EN60950-1: 2002 Certificate No.7427
- Note: Application type name for certification test, please use standard product type name, i.e. TLP624(BV): TLP624 TLP624−2(BV): TLP624−2 Pin Configurations (top view) 1. Anode 2. Cathode 3. Emitter 4. Collector TLP624 1,3,5,7: Anode 2,4,6,8: Cathode 9,11,13,15: Emitter 10,12,14,16: Collector TLP624 1,3 : Anode 2,4 : Cathode 5,7 : Emitter 6,8 : Collector TLP624–2 TOSHIBA 11 −5B2 Weight: 0.26 g (typ.) TOSHIBA 11 −10C4 Weight: 0.54 g (typ.) TOSHIBA 11 −20A3 Weight: 1.1 g (typ.) Current Transfer Ratio(min) Ta = 25°C Ta=−25~75°CClassi− fication IF=1mA VCE=0.5V IF=0.5mA VCE=1.5V IF=1mA VCE=0.5V Marking of classi− fication Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV,blank Unit in mm
TLP624,TLP624−2,TLP624−4 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP624 TLP624−2 TLP624−4 Unit Forward current IF 60 50 mA Forward current detating ΔIF / °C −0.7(Ta ≥ 39°C) −0.5(Ta ≥ 25°C) mA / °C Pulse forward current IFP 1(100 μs, pulse, 100pps) A Power dissipation(1 Circuit) PD 100 70 mW Power dissipation derating (Ta ≥ 25°C, 1 Circuit) ΔPD / °C −1.0 −0.7 mW / °C Reverse voltage VR 5 V LED Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation(1 circuit) PC 150 100 mW Collector power dissipation derating (Ta ≥ 25°C, 1 Circuit) ΔPC / °C −1.5 −1.0 mW / °C Detector Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Popr −55~100 °C Lead soldering temperature Tsol 260(10s) °C Total package power dissipation(1 Circuit) PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 Circuit) ΔP Isolation voltage (Note 1) BV S 5000(AC, 1min., RH≤60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 1.6 20 mA Collector current IC ― 1 10 mA Operating temperature Topr −25 ― 75 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
TLP624,TLP624−2,TLP624−4 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR V R= 5V ― ― 10 μA LED Capacitance C T V = 0, f = 1MHz ― 30 ― pF Collector−emitter breakdown voltage V(BR)CEO IC = 0.5mA 55 ― ― V Emitter−collector breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA Collector dark current ICEO VCE = 24V, Ta = 85°C ― 2 50 μA Detector Capacitance collector to emitter CCE V=0 , f=1MHz ― 12 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 100 ― 1200 Current transfer ratio IC / IF IF = 1mA, VCE = 0.5V Rank BV 200 ― 1200 50 ― ― Low input CTR IC / IF (low) IF = 0.5mA, VCE = 1.5V Rank BV 100 ― ― IC = 0.5mA, IF = 1mA ― ― 0.4 ― 0.2 ― Collector−emitter saturation voltage VCE (sat) IC = 1mA, IF = 1mA Rank BV ― ― 0.4 V Coupled Electrical Characteristics (Ta = −25°C~75°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 ― ― Current transfer ratio IC / IF IF = 1mA, VCE = 0.5V Rank BV 100 ― ― ― 50 ― Low input CTR IC / IF (low) IF = 0.5mA, VCE = 1.5V Rank BV ― 100 ―
TLP624,TLP624−2,TLP624−4 2007-10-01 4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS VS = 0, f = 1MHz ― 0.8 ― pF Isolation resistance RS V S = 500V 5×10 ― Ω AC, 1minute 5000 ― ― AC, 1second, in oil ― 10000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 10000 ― Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time tr ― 8 ― Fall time tf ― 8 ― Turn−on time ton ― 10 ― Turn−off time toff VCC = 10V, IC = 2mA RL = 100Ω ― 8 ― μs Turn−on time tON ― 10 ― Storage time tS ― 50 ― Turn−off time TOFF RL = 4.7 kΩ (Fig.1) VCC = 5 V, IF = 1.6mA ― 300 ― μs Fig. 1 Switching time test circuit IF RL VCC VCE VCE tON IF tOFF VCC 4.5V 0.5V tS
TLP624,TLP624−2,TLP624−4 2007-10-01 5 ΔVF / ΔTa – IF Forward current I F ( m A ) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) -2.8 -0.4 0.3 50 0.1 -0.8 -1.2 -1.6 -2.0 -2.4 0.5 1 3 5 10 30 IFP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP (mA) 1000 500 300 100 Pulse width ≦ 10 μs Repetitive Frequency = 100 Hz Ta = 25 °C IF – Ta Ambient temperature T a (°C) Allowable forward current IF (mA) 100 –20 0 20 40 60 80 100 120 TLP624 TLP624-2,-4 IF – VF Forward voltage V F (V) Forward current I F ( m A ) 100 0.1 0.4 0.5 0.3 Ta = 25 °C Duty cycle ratio D R Allowable pulse forward current IFP (mA) IFP – DR 5000 3000 1000 500 300 100 10-3 3 10 -2 3 10 -1 3 10 0 Pulse width ≦ 100 μs Ta = 25 °C Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) PC – Ta 200 160 120 -20 0 20 40 60 80 100 120 TLP624 TLP624-2,-4
TLP624,TLP624−2,TLP624−4 2007-10-01 6 IC / IF – IF Forward current I F ( m A ) Current transfer ratio I C / IF (%) 1000 0.1 500 300 0.3 0.5 1 3 5 10 100 IC – IF Forward current I F ( m A ) Collector current I C ( m A ) 0.01 0.1 0.5 0.3 0.05 0.03 0.3 0.5 1 3 5 10 0.1 Ta = 25 °C V CE = 5 V V CE = 1.5 V V CE = 0.5 V Ambient temperature T a ( ° C ) Collector current I C ( m A ) IC – Ta 0.03 -20 0.5 0.3 0 20 40 60 80 100 0.1 0.05 V CE = 1.5 V V CE = 0.5 V 0.2 mA 0.5 mA 1 mA 2m A IF = 2 mA IC – VCE Collector-emitter voltage V CE (V) Collector current I C (mA) 4.0 0.1 3.5 2.0 1.0 0.5 0.3 0.5 1 3 5 10 1.5 Ta = 25 °C 3.0 2.5 IF = 1.0 mA 0.8 mA 0.6 mA 0.5 mA 0.4 mA 0.2 mA Ta = 25 °C V CE = 5 V V CE = 1.5 V V CE = 0.5 V
TLP624,TLP624−2,TLP624−4 2007-10-01 7 Ambient temperature T a ( ° C ) Collector dark current I D (I CEO) ( μA) ID – Ta 10-5 101 100 10-1 10-2 10-3 20 40 60 80 100 120 10-4 5 V VCE = 24 V 10 V Load resistance R L ( k Ω) Switching time ( μs) Switching Time – RL 3000 1000 500 300 100 1 3 5 10 30 50 100 Ta = 25 °C IF = 1.6 mA VCC = 5 V tOFF ts tON
TLP624,TLP624−2,TLP624−4 2007-10-01 8 RESTRICTIONS ON PRODUCT USE
- Toshiba Corporation, and its subsidiaries and affiliates (collect ively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
- This document and any information herein may not be reproduc ed without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
- Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
- Product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.
- Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
- Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
- The information contained herein is pres ented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
- A BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
- GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
- Do not use or otherwise make available Product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
- Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.