TLP621 ISOCOM | Alldatasheet

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Unit 25B, Park View Road West, Park V iew Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92547m-AAS/A1 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICAL LY COUPLED ISOL ATORS APPRO V ALS l UL recognised, File No. E91231

DESCRIPTION

The TLP621, TLP621-2 , TLP621-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FE ATURES l Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio ( 50% min) l High Isolation V oltage (5.3kV RMS ,7.5kV PK ) l High BV CEO ( 55Vmin ) l All electrical parameters 100% tested l Custom electrical selections available APPLIC ATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances TLP621, TLP621-2, TLP621-4 OPTION G 7.62SUR FACE MOUNT OPTION SM 10.16 0.26 0.26 20.32 19.32 4. 0 3. 0 0.5 7.62 13° Max 7.0 6.0 2.54 1.2 0.53.0 1.2 3.0 4. 0 3. 0 3.35 7.0 6.0 0.5 0.5 7.62 0.26 13° Max 2.54TLP62 1 TLP621- 2 3.0 10.1 6 9.16 4. 0 3. 0 3.35 0.5 7.0 6.0 7.62 1.2 13° Max 0.5 0.26 2.54 TLP621- 4 Dimensions in mm 3.35 5.08 4.08 1 8 6 11 5 12 4 13 10.46 9.86 0.6 0.1 1.25 0.75

PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward Voltage (V F ) 1.0 1.15 1.3 V I F = 10mA Reverse Voltage (V R ) 5 V I R = 10 µA Reverse Current (I R ) 10 µA V R = 5V Output Collector-emitter Breakdown (BV CEO ) 55 V I C = 0.5mA ( Note 2 ) Emitter-collector Breakdown (BV ECO ) 6 V I E = 100 µA Collector-emitter Dark Current (I CEO ) 100 nA V CE = 24V Coupled Current Transfer Ratio (CTR) (Note 2) TLP621, TLP621-2, TLP621-4 50 600 % 5mA I F , 5V V CE CTR selection available GB 100 600 % BL 200 600 % GB 30 % 1mA I F , 0.4V V CE Collector-emitter Saturation VoltageV CE (SAT) 0.4 V 8mA I F , 2.4mA I C GB 0.4 V 1mA I F , 0.2mA I C Input to Output Isolation Voltage V ISO 5300 V RMS See note 1

7500 V PK See note 1

Input-output Isolation Resistance R ISO 5x10 10 Ω V IO = 500V (note 1) Rise Time tr 2 µs V CC =10V , Fall Time tf 3 µs I C = 2mA, R L = 100 Ω Turn-on Time ton 3 µs Turn-off Time toff 3 µs Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 7/12/00 ELECTRICAL CHARACTERISTICS ( T A = 25°C Unless otherwise noted ) ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 50mA Reverse Voltage 5V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BV CEO 55V Emitter-collector Voltage BV ECO 6V Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/ ° C above 25°C)

-30 0 25 50 75 100 125 Ambient temperature T A ( °C ) 150 200 Ambient temperature T A ( °C ) Collector power dissipation P C (mW) -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature -30 0 25 50 75 100 Ambient temperature T A ( °C ) Collector-emitter voltage V CE ( V ) Collector-emitter saturation voltage V CE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 100 T A = 25°C 0.04 0.08 0.12 0.16 0.20 0.24 0.28 I F = 5mA I C = 1mA Forward current I F (mA) Collector Current vs. Low Collector-emitter Voltage Collector current I C (mA) I F = 2mA Collector Current vs. Collector-emitter Voltage Collector-emitter voltage V CE ( V ) Collector current I C (mA) Current Transfer Ratio vs. Forward Current Forward current I F (mA) Current transfer ratio CTR (%) 1 2 5 10 20 50 120 160 200 240 0 2 4 6 8 10 T A = 25°C 280 320 I F = 5mA V CE = 5V T A = 25°C