TLP627X ISOCOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
z UL recognised, File No. E91231 'X' SPECIFICATION APPROV ALS zzzzz VDE 0884 in 3 available lead forms : - - STD - G form - SMD approved to CECC 00802
DESCRIPTION
The TLP627 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 4 pin dual in line plastic package.
FEATURES
z Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation V oltage (5.3kVRMS ,7.5kVPK ) z High Current Transfer Ratio ( 1000% min) z High BVCEO (300V min.) z Low input current 1mA IF
APPLICATIONS
z Copiers, facsimiles z Numerical control machines z Signal transmission between systems of different potentials and impedances HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR TLP627X TLP627 10.16 SURFACE MOUNTSURFACE MOUNTSURFACE MOUNTSURFACE MOUNTSURFACE MOUNT 0.26 7.62 OPTION GOPTION GOPTION GOPTION GOPTION GOPTION SMOPTION SMOPTION SMOPTION SMOPTION SM ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 0.26 13° Max
2.54 Dimensions in mm
5.08 4.08 10.46 9.86 0.6 0.1 1.25 0.75 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -30°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current 50mA Reverse V oltage 6V Power Dissipation 70mW OUTPUT TRANSISTOR Collector-emitter V oltage BV CEO 300V Collector Current IC 150mA Power Dissipation 150mW POWER DISSIPATION Total Power Dissipation 200mW
PARAMETER MIN TYP MAX UNITS TEST CONDITION Input Forward V oltage (VF) 1.0 1.15 1.3 V I F = 10mA Reverse Current (IR)1 0 μAV R = 4V Output Collector-emitter Breakdown (BVCEO ) 300 V I C = 0.1mA Emitter-collector Breakdown (BVECO ) 0.3 V I E = 0.1mA Collector-emitter Dark Current (ICEO ) 10 200 nA V CE = 200V Coupled Current Transfer Ratio (CTR) 1000 4000 % 1mA IF , 1V VCE Saturated CTR (CTRSAT) 500 % 10mA I F , 1V VCE Collector-emitter Saturation V oltageVCE(SAT) 1.2 V 10mA I F , 100mA IC Collector-emitter Saturation V oltageVCE(SAT) 1.0 V 1mA I F , 10mA IC Input to Output Isolation V oltage VISO 5300 V RMS See note 1
7500 V PK See note 1
Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1) Input-output Capacitance Cf 1 pF V = 0, f =1MHz Output Rise Time tr 40 μsV CC = 10V , IC= 10mA, Output Fall Time tf 15 μsR L = 100Ω Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory. 26/11/09 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output 10% 90% 10% 90% toff tr ton tf Output VCC IC = 10mA Input FIGURE 1 100Ω