TLP4172G TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Photocoupler Photorelay TLP4172G Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4172G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP package. This 1-form-B (NC) photorelay features a withstanding voltage of 350 V.

  • 4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm
  • Normally closed (1-form-B) device
  • Peak off-state voltage: 350 V (min)
  • Trigger LED current: 3 mA (max)
  • On-state current: 90 mA (max)
  • On-state resistance: 50 Ω (max)
  • Isolation voltage: 1500 Vrms (min)
  • UL Recognized: UL1577, File No. E67349 Pin Configuration (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 1: Anode 2: Cathode 3: Drain 4: Drain

Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current I F 50 mA Forward current derating (Ta > = 25°C) ∆IF/°C −0.5 mA/°C Peak forward current (100 µs pulse, 100 pps) I FP 1 A Reverse voltage V R 5 V LED Junction temperature T j 125 °C Off-state output terminal voltage V OFF 350 V One channel operation On-state current Two channel operations (1a1b simultaneous operation) ION 90 mA One channel operation On-state current derating (Ta > = 25°C) Two channel operations (1a1b simultaneous operation) ∆ION/°C −0.9 mA/°C Detector Junction temperature T j 125 °C Storage temperature range T stg −55 to 125 °C Operating temperature range T opr −40 to 85 °C Lead soldering temperature (10 s) T sol 260 °C Isolation voltage (AC, 1 min, R.H. < = 60%) (Note 1) BV S 1500 Vrms Note 1: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V DD ⎯ ⎯ 280 V Forward current I F 5 ⎯ 25 mA On-state current I ON ⎯ ⎯ 90 mA Operating temperature T opr −20 ⎯ 65 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V F I F = 10 mA 1.0 1.15 1.3 V Reverse current I R V R = 5 V ⎯ ⎯ 10 µA LED Capacitance C T V = 0, f = 1 MHz ⎯ 30 ⎯ pF Off-state current I OFF V OFF = 350 V, IF = 5 mA ⎯ ⎯ 1 µA Detector Capacitance C OFF V = 0, f = 1 MHz, IF = 5 mA ⎯ 30 ⎯ pF Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current I FC I OFF = 10 µA ⎯ 1 3 mA Return LED current I FT I ON = 90 mA 0.1 ⎯ ⎯ mA On-state resistance R ON I ON = 90 mA ⎯ 27 50 Ω

Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance input to output C S V S = 0, f = 1 MHz ⎯ 0.8 ⎯ pF Isolation resistance R S V S = 500 V, R.H. <= 60% 5 × 1010 10 14 ⎯ Ω AC, 1 min 1500 ⎯ ⎯ AC, 1 s, in oil ⎯ 3000 ⎯ Vrms Isolation voltage BV S DC, 1 min, in oil ⎯ 3000 ⎯ Vdc Switching Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Turn-on time t ON ⎯ 0.25 0.5 ms Turn-off time t OFF RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) ⎯ 0.5 1 ms Note 2: Switching time test circuit tOFF tON 10% 90% VOUT IF

1 VDD

Ambient temperature Ta (°C) IF – Ta Allowable forward current I F (mA) Ambient temperature Ta (°C) ION – Ta Allowable on-state current I ON (mA) Forward voltage V F (V) IF – VF Forward current I F (mA) −20 100 120 100 80 60 40 20 0 Ta = 25°C 100 0.3 0.1 −20 160 120 100 80 60 40 20 0 120

VOFF = 350 V IF = 5 mA Ambient temperature Ta (°C) RON – Ta On-state resistance R ON ( Ω) Ambient temperature Ta (°C) IOFF – Ta Off-state current I OFF ( n A ) Ambient temperature Ta (°C) IFC – Ta Trigger LED current I FC (mA) ION – VON On-state current I ON ( m A ) On-state voltage V ON (V) Switching time t ON, tOFF ( µs) Input current I F ( m A ) tON, tOFF – IF Ambient temperature Ta (°C) tON, tOFF – Ta Switching time t ON, tOFF ( µs) −40 3000 100 80 60 40 20 0 −20 300 100 1000 tON tOFF VDD = 20 V, RL = 200 Ω IF = 5 mA 1 100 Ta = 25°C VDD = 20 V, RL = 200 Ω tON tOFF 30 50 10 3 5 300 3000 300 100 1000 Ta = 25°C −4 −1 0 4 1 150 −150 −50 100 −100 −2 −3 2 3 ION = 90 mA t < 1 s −40 100 80 60 40 20 0 −20 −20 0 20 40 80 100 60 −40 ION = 90 mA t < 1 s

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to im prove the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin g TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semic onductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • The products described in this document are subject to the foreign exchange and foreign trade laws.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
  • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 030619EBCRESTRICTIONS ON PRODUCT USE