TLP4006G

TLP4006G TOSHIBA | Alldatasheet

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© 2019 Toshiba Electronic Devices & Storage Corporation TOSHIBA Photocoupler Photorelay TLP4006G Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4006G consists of an infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.

• Normally closed (1-form-B) device, normally opened (1-form-A) device
• Peak off-state voltage: 350 V (min)
• Trigger LED current: 3 mA (max)
• On-state current: 120 mA (max)
• On-state resistance: 25 Ω (max)
• Isolation voltage: 2500 Vrms (min) Pin Configuration (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 1: Anode (1b) 2: Cathode (1b) 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 7: Drain D3 (1b) 8: Drain D4 (1b) Start of commercial production 2002-09

© 2019 Toshiba Electronic Devices & Storage Corporation Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit LED Forward current IF 50 mA Forward current derating (Ta ≥ 25°C) ∆IF/°C −0.5 mA/°C Peak forward current IFP 1 A Reverse voltage VR 5 V Input power dissipation PD 50 mW Input power dissipation derating (Ta ≥ 25°C) ΔPD/°C -0.5 mW/°C Junction temperature Tj 125 °C Detector Off-state output terminal voltage VOFF 350 V On-state current One channel operation ION 120 mA Two channel operations (1a1b simultaneous operation) On-state current derating (Ta ≥ 25°C) One channel operation ∆ION/°C −1.2 mA/°C Two channel operations (1a1b simultaneous operation) Output power dissipation PO 370 mW Output power dissipation derating (Ta ≥ 25°C) ΔPO /°C -3.7 mW/°C Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 280 V Forward current IF 5 ― 25 mA On-state current ION ― ― 120 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

© 2019 Toshiba Electronic Devices & Storage Corporation Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit LED Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT V = 0 V, f = 1 MHz  30  pF Detector Off-state current IOFF VOFF = 350 V   1 μA Capacitance (1b) COFF V = 0 V, f = 1 MHz, IF = 5 mA  65  pF Capacitance (1a) V = 0 V, f = 1 MHz, IF = 0 mA  65 

© 2019 Toshiba Electronic Devices & Storage Corporation Coupled Electrical Characteristics (Ta = 25°C) Characteristics Form Symbol Test Condition Min Typ. Max Unit Trigger LED current 1a IFT ION = 120 mA  1 3 mA 1b IFC IOFF = 10 μA Return LED current 1a IFC IOFF = 10 μA 0.1   mA 1b IFT ION = 120 mA On-state resistance (Note 2)  RON ION = 120 mA  15 25 Ω Note 2: 1-form-A: IF = 5 mA, 1-form-B: IF = 0 mA Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance input to output CS VS = 0 V, f = 1 MHz  0.8  pF Isolation resistance RS VS = 500 V, R.H. ≤ 60 % 5 × 1010 1014  Ω Isolation voltage BVS AC, 60 s 2500   Vrms Switching Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Turn-on time tON RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 3)   1 ms Turn-off time tOFF   3 Turn-on time tON RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 3)   1 ms Turn-off time tOFF   1 Note 3: Switching time test circuit tOFF tON 10% 90% VOUT IF VDD VOUT RL IF tOFF tON 10% 90% VOUT IF VDD VOUT RL IF

© 2019 Toshiba Electronic Devices & Storage Corporation Characteristics curves for 1-form-A/B Ambient temperature Ta ( °C) IF – Ta Allowable forward current IF (mA) Ambient temperature Ta ( °C) ION – Ta Allowable on-state current ION (mA) Forward voltage V F (V) IF – VF Forward current I F (mA) −20 100 120 100 −20 280 120 100 240 200 160 120 Ta = 25°C 0.6 0.8 1.2 1.6 1.8 1.4 100 0.3 0.5 0.1 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

© 2019 Toshiba Electronic Devices & Storage Corporation Characteristics curves for 1-form-B Ambient temperature Ta ( °C) RON – Ta On-state resistance R ON ( Ω) Ambient temperature Ta ( °C) IOFF – Ta Off-state current I OFF (nA) Ambient temperature Ta ( °C) IFC – Ta Trigger LED current I FC (mA) ION – VON On-state current I ON (mA) On-state voltage VON (V) Switching time tON, tOFF (µs) Input current IF (mA) tON, tOFF – IF Ambient temperature Ta ( °C) tON, tOFF – Ta Switching time tON, tOFF (µs) ION = 120 mA t < 1 s −20 100 ION = 120 mA t < 1 s −40 100 −20 VOFF = 350 V IF = 5 mA 100 1000 100 Ta = 25°C 200 −200 −100 100 2000 100 Ta = 25°C VDD = 20 V, RL = 200 Ω tON tOFF 1000 300 500 100 VDD = 20 V, RL = 200 Ω IF = 5 mA −40 1200 100 −20 800 600 400 200 tON tOFF 1000 NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

© 2019 Toshiba Electronic Devices & Storage Corporation Characteristics curves for 1-form-A Switching time tON, tOFF (µs) On-state current I ON (mA) Ambient temperature Ta ( °C) RON – Ta On-state resistance R ON ( Ω) Ambient temperature Ta ( °C) IFT – Ta Trigger LED current I FC (mA) Ambient temperature Ta ( °C) IOFF – Ta Off-state current I OFF (nA) On-state voltage VON (V) ION – VON Input current IF (mA) tON, tOFF – IF Ambient temperature Ta ( °C) tON, tOFF – Ta Switching time tON, tOFF (µs) −20 ION = 120 mA t < 1 s 100 ION = 120 mA t < 1 s −40 100 −20 VOFF = 350 V −40 100 −20 100 Ta = 25°C IF = 5 mA 200 −200 −100 100 500 Ta = 25°C VDD = 20 V, RL = 200 Ω 100 300 100 tON tOFF VDD = 20 V, RL = 200 Ω IF = 5 mA −40 500 100 −20 400 300 200 100 tOFF tON NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

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