TLE4268

TLE4268 SIEMENS | Alldatasheet

Document overview

• PDF pages: 13

Technical content

Features

• Output voltage tolerance £ – 2%
• Very low current consumption
• Low-drop voltage
• Watchdog
• Settable reset threshold
• Overtemperature protection
• Reverse polarity protection
• Short-circuit proof
• Suitable for use in automotive electronics
• Wide temperature range Type Ordering Code Package TLE 4268 GS Q67006-A9229 P-DSO-8-1 (SMD) TLE 4268 G Q67006-A9146 P-DSO-20-6 (SMD) Functional Description This device is a 5-V low-drop fixed-voltage regulator. The maximum input voltage is 45 V. It can deliver an output current of at least 180 mA. The IC is short-circuit proof and features temperature protection that disables the circuit in the event of impermissibly high temperatures. The watchdog function is disabled as a function of the load, so that a controller is not interrupted during sleep mode by a watchdog reset. Application Description The IC regulates an input voltage Vi in the range 5.5 V < Vi < 45 V to Vqrated=5 . 0V . I n the event of an output voltage VQ < VRT , a reset signal is generated. The wiring of the reset switching threshold input enables the value of VRT to be reduced. The reset delay time can be adjusted using an external capacitor. The integrated watchdog monitors the connected active controller. If there is no positive-going edge at the watchdog input, the reset output is set to low. The reset delay capacitor provides a wide adjustment range for the pulse repetition time. The watchdog function is only activated if the load exceeds 8 mA. This ensures that a microcontroller is not activated during power-down and the current drain is not increased. The IC is protected against overload and overtemperature.

Semiconductor Group 2 1998-11-01 Pin Configuration (top view) Figure 1 Pin Definitions and Functions Pin Symbol Function

1 VI Input voltage

2 N. C. Not connected

3 QRES Reset output

4 GND Ground

5 DRES Reset delay

6 SRES Reset switching threshold

7 W Watchdog input

W I GND 5 7N.C. V Q AEP01954 V QRES DRES

Semiconductor Group 3 1998-11-01 Pin Configuration (top view) Figure 2 Pin Definitions and Functions Pin Symbol Function 1, 2, 8, 13, 19, 20 N. C. Not connected. 3Q R E S Reset output; the open collector output is connected to the 5-V output via an integrated resistor of 30 kW . 4 … 7, 14 … 17 GND Ground 9D R E S Reset delay; connect a capacitor to ground for delay time adjustment.

10 SRES Reset switching threshold; for setting the switching threshold,

output to ground with voltage divider. If this input is connected to ground, the reset is triggered at an output voltage of 4.5 V.

11 W Watchdog input; positive-edge-triggered input for monitoring a

microcontroller. VQ 5-V output voltage; block to ground with 22-mF capacitor, ESR < 3 W .

18 VI Input voltage; block to ground directly on the IC with ceramic

capacitor. AEP01540 GND QV V I N.C. N.C. N.C. GND 5 GNDGND N.C. DRES QRES GND GND SRES GND GND W N.C. N.C. P-DSO-20-6

Semiconductor Group 4 1998-11-01 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If The externally scaled down output voltage at the reset threshold input drops below 1.35 V, the external reset delay capacitor is discharged by the reset generator. If the voltage on the capacitor reaches the lower threshold VST , a reset signal is generated on the reset output and not cancelled again until the upper threshold voltage is exceeded. If the reset threshold input is connected to GND, reset is triggered at an output voltage of 4.5 V. A connected microcontroller is monitored by the watchdog logic. If pulses are missing, the rest output is set to low. The pulse sequence time can be set within a wide range with the reset delay capacitor. The IC also incorporates a member of internal circuits for protection against:

• Overload
• Overtemperature
• Reverse polarity Figure 3 Block Diagram AEB01539 Temperature Sensor Control Amplifier Protection Circuit Reference BandgapAdjustment Generator Reset Watchdog Watchdog Input Output Reset Reset Reset Output Switching Delay Threshold 18Input 4-7, 14-17 GND

Semiconductor Group 5 1998-11-01 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values Unit Notes min. max. Input Input voltage Input current VI II – 30 45 V Internally limited Reset Output Voltage Current VR IR – 0.3 7 V Internally limited Reset Delay Voltage Current VD ID – 0.3 7 V Internally limited Watchdog Watchdog input VW – 0.3 7 V – Reset Input Reset threshold VRE – 0.3 7 V – Output Output voltage Output current VQ IQ – 0.3 7 V Internally limited Ground Current IM – 100 50 mA – Temperatures Junction temperature Storage temperature Tj TS – 50 150 150

Semiconductor Group 6 1998-11-01 Operating Range Optimum reliability and life time are guaranteed if the junction temperature does not exceed 125°C in operating mode. Operation at up to the maximum junction temperature of 150°C is possible in principle. Note, however, that operation at the maximum permitted ratings could affect the reliability of the device. Parameter Symbol Limit Values Unit Notes min. max. Input voltage VI –4 5 V – Junction temperature Tj – 40 150 °C– Thermal Resistance Junction ambient (soldered) RthjA RthjA – 200 K/W K/W P-DSO-8-1 P-DSO-20-6 Junction case RthjC RthjC –6 0 K/W K/W P-DSO-8-1 P-DSO-20-6 Characteristics VI = 13.5 V; – 40°C £ Tj£ 125 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output voltage VQ 4.90 5.00 5.10 V 5 mA £ IQ £ 150 mA;

6 V£ VI £ 28 V;

IQ 180 250 – mA – Current consumption Iq = II - IQ Iq – 300 450 mA IQ = 0 mA Current consumption Iq = II – IQ Iq –1 3 2 0 m A IQ = 150 mA Drop voltage VDR –0 . 2 5 0 . 5 V IQ = 150 mA1) Load regulation DVQ –1 0 3 0 m V IQ = 5 to 150 mA Supply voltage regulation DVQ –1 0 3 0 m V VI = 6 to 28 V IQ = 150 mA 1) Drop voltage =VI – VQ (measured when the output voltage has dropped 100 mV from the nominal value obtained at 13.5 V input)

Semiconductor Group 7 1998-11-01 Note: The reset output is low in range from VQ = 1 V to VRT . Reset Generator Switching thresholdVRT 4.2 4.5 4.8 V – Switching voltage VRE 1.28 1.35 1.45 V – Saturation voltageVR – 0.2 0.5 V 1 mA extern Saturation voltageVC – 30 100 mV VQ < VRT Charging current Id 51 2 1 8 mA VC = 1.0 V Delay switching threshold VDU 1.4 1.8 2.2 V – Delay time td 10 15 25 ms C d = 100 nF Delay time tt –2– ms C d = 100 nF Pull-up RR 18 30 46 k W with resp. to VQ Lower switching threshold VDRL 0.2 0.4 0.55 V – Watchdog Discharge current ICd 1.5 3.5 5.2 mA VC = 1.0 V Charging current Id 51 2 1 8 mA VC = 1.0 V Switching voltage VCd 1.6 1.8 2.0 V – Lower switching threshold VDWL 0.2 0.4 0.55 V – Watchdog periode TWP 30 55 75 ms C d = 100 nF Watchdog trigger time TWT 25 40 60 ms C d = 100 nF Activating currentIQ 2 8 15 mA Activates watchdog Slew rate VW 5––V / ms from 20 % up to 80 % VQ Characteristics (cont’d) VI = 13.5 V; – 40°C £ Tj£ 125 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.

Semiconductor Group 9 1998-11-01 Figure 6 Timing of the Watchdog Function AED01543 WV V VQ DV VWO VDU -VDWL() I( d + dis)I IdI x dis TWP = C D ; WRt WPT WTT WRt = VV( DU - DWL ) Id DC ; T = VV( DU - DWL ) Idis DC DUV VDWL I I WT DULV = DRLV

Semiconductor Group 10 1998-11-01 Drop Voltage V Dr versus Output Current IQ Current Consumption Iq versus Input Voltage V i Current Consumption Iq versus Output Current IQ Output Voltage versus Input Voltage V i AED01544 = 125 V DR T mV C 100 200 300 400 500 600 700 QI 50 100 150 200 mA CT 25= 250 j j AED01546 =3 3WR Iq V mA 10 20 30 40 V L I LR W50= LR W100= Tj C25= AED01545 0 50 150 200 QI qI 250 V I =13.5 V mA 100 mA T 25=j C AED01547 VQ V mA 24 6 8 V I LR W33=

Semiconductor Group 11 1998-11-01 Charge Current Id and Discharge Current Icd versus Temperature Tj Output Voltage V Q versus Temperature Tj Switching Voltage V Cd and V ST versus Temperature Tj Output Current IQ versus Input Voltage V i AED01548 -40 = 13.5 VI T A 04 0 80 120 C VI m DV 1.0 V= dI disI j AED01550 -40 4.6 VQ 4.7 4.8 4.9 5.0 5.1 V 04 0 80 120 V

13.5 VIV =

-40 = 13.5 V V D T V 04 0 80 120 C V I 0.4 0.8 1.2 1.6 2.0 2.4 2.8 DUV DWLV V DRL j AED01551 IQ 100 150 200 250 mA 10 20 30 40 V V j Tj C25=

Semiconductor Group 12 1998-11-01 Package Outlines P-DSO-8-1 (Plastic Dual Small Outline) GPS05121 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device

Semiconductor Group 13 1998-11-01 Package Outlines (cont’d) 11 0 1120 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side GPS05094 2.65 max 0.1 0.2-0.1 2.45-0.2 +0.150.35 1.27 0.2 24x -0.27.6 1) 0.35 x 45˚ 0.238˚ max +0.09 +0.8 ±0.310.3 0.4 12.8-0.2 P-DSO-20-6 (Plastic Dual Small Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device