TLE4266G SIEMENS | Alldatasheet

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l Output voltage tolerance £ – 2% l Very low current consumption l Low-drop voltage l Overtemperature protection l Reverse polarity proof l Wide temperature range l Suitable for use in automotive electronics l Inhibit t New type Functional Description TLE 4266 G is a 5-V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The IC regulates an input voltage Vi in the range of 5.5 V < Vi < 45 V to VQrated = 5 V / 10 V. The maximum output current is more than 120 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 mA. The IC is shortcircuit-proof and incorporates temperature protection that disables the IC an overtemperature. Dimensioning Information on External Components The input capacitor C i is necessary for compensating line influences. Using a resistor of approx. 1W in series with C i, the oscillating of input inductivity and input capacitance can be clamped. The output capacitor C Q is necessary for the stability of the regulating circuit. Stability is guaranteed at values C Q ‡ 10 mF and an ESR £ 10 W within the operating temperature range. Type Ordering Code Package TLE 4266 G Q67006-A9152 P-SOT223-4-2 (SMD) t TLE 4266 GSV10 Q67006-A9355 P-SOT223-4-2 (SMD) P-SOT223-4-2 TLE 4266

Semiconductor Group 2 1998-11-01 Pin Configuration (top view) Pin Definitions and Functions Pin Symbol Function

1 VI Input voltage; block to ground directly at the IC with a ceramic

capacitor. 2I n h Inhibit; low-active input. 3 VQ Output voltage; block to ground with a ‡ 10mF capacitor. 4G N D Ground AEP01734 VI Inh QV GND 123

Semiconductor Group 3 1998-11-01 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: l Overload l Overtemperature l Reverse polarity Block Diagram Reference BandgapAdjustment Sensor Temperature Saturation Control and Protection Circuit Control Amplifier Buffer 1 3 OutputInput Inhibit GND AEB01725

Semiconductor Group 4 1998-11-01 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values Unit Notes min. max. Input Voltage Vi – 42 45 V – Current Ii – – – internally limited Inhibit Voltage Ve – 42 45 V – Output Voltage VQ – 1 16 V – Current IQ – – – internally limited GND Current IM 50 – mA – Temperature Junction temperature Tj – 150 °C– Storage temperature TS – 50 150 °C– Operating Range Input voltage Vi 5.5 45 V – Input voltage GSV 10-version Vi 10.5 45 V – Junction temperature Tj – 40 150 °C– Thermal Resistance Junction ambient RthjA – 100 K/W soldered Junction case RthjC –2 5 K / W –

Semiconductor Group 5 1998-11-01 Characteristics VI = 13.5 V; – 40 °C £ Tj £ 125 °C Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output voltage VQ 4 . 95 5 . 1V 5 m A £ IQ £ 100 mA

6 V £ Vi £ 28 V

VQ 9.8 10.0 10.2 V 5 mA £ IQ £ 100 mA IQ 120 150 – mA – Current consumption Iq = Ii – IQ Iq –01 0 mA Ve = 0 V; Tj £ 100 °C Current consumption Iq = Ii – IQ Iq ––4 0 0 mA IQ = 1 mA Current consumption Iq = Ii – IQ Iq – 1 01 5m A IQ = 100 mA Drop voltage VDr – 0.25 0.5 V IQ = 100 mA1) Load regulation DVQ ––4 0 m V IQ = 5 to 100 mA Vi = 6 V Supply-voltage regulation DVQ – 1 53 0m V VI = 6 V to 28 V IQ = 5 mA Supply-voltage rejection SVR –5 4 –d B fr = 100 Hz Vr = 0.5 VSS Inhibit Inhibit on voltage Ve, on ––3 . 5 V – Inhibit off voltage Ve, off 0.8 – – V – Inhibit current Ie 51 5 2 5 mA Ve = 5 V 1) Drop voltage = Vi – VQ (measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at Vi = 13.5 V).

Semiconductor Group 6 1998-11-01 Measuring Circuit Application Circuit TLE 4266G nF100470 µF Ve Vi Input

5.5 V to 45 V

µF22 IQ AES01726 Output TLE 4266G Input µF22 AES01727 C i Output QC e.g. Kl. 15

Semiconductor Group 7 1998-11-01 Drop Voltage V Dr versus Output Current IQ Current Consumption Iq versus Output Current IQ Current Consumption Iq versus Input Voltage V i Current Consumption Iq versus Output Current IQ DrV IQ 100 200 300 400 500 600 mV 800 50 100 mA 17575 125 = C125 25 C= 700 jT jT IQ AED01980 mA 15050 100 Iq mA Vi = 13.5 V AED01979 R = Iq V L 50 W 10 20 30 V 50 mA W100L =R i IQ AED01981 mA 3010 20 Iq 0.5 1.0 1.5 2.0 mA 3.0 Vi = 13.5 V 5 15 2.5

Semiconductor Group 8 1998-11-01 Output Voltage V Q versus Temperature Tj (5 V-version) Output Voltage V Q versus Input Voltage V i (5 V-version) Output Current IQ versus Input Voltage V i Output Voltage V Q versus Inhibit Voltage V e (5 V-version) 4.60 -40 AED01982 V Q 04 0 8 0 160 4.80 5.00 V 5.20 120 C 4.70 4.90 5.10 iV = 13.5 V jT AED01984 V Q 24 6 10 V LR =5 0 W iV V AED01983 = C125 25 C= QI V i 10 20 30 40 50 100 150 200 mA V jT jT AED02014 VQ V IV = 13.5 V eV V12 3 4 5 6 =V I eV

Semiconductor Group 9 1998-11-01 Package Outlines ±0.1 ±0.2 ±0.10.7 321 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25 P-SOT223-4-2 (Plastic Small Outline Transistor) Weight approx. 0.15 g GPS05560 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mmSMD = Surface Mounted Device