TLE4266 SIEMENS | Alldatasheet
Document overview
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Technical content
Features
- Output voltage tolerance≤± 2%
- Very low current consumption
- Low-drop voltage
- Overtemperature protection
- Reverse polarity proof
- Wide temperature range
- Suitable for use in automotive electronics
- Inhibit ▼ New type Functional Description TLE 4266 G is a 5 V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The IC regulates an input voltageVi in the range of 5.5 V <Vi < 45 V toVQrated = 5 V. The maximum output current is more than 120 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10µA. The IC is shortcircuit- proof and incorporates temperature protection that disables the IC an overtemperature. Dimensioning Information on External Components The input capacitor C i is necessary for compensating line influences. Using a resistor of approx. 1Ω in series withC i, the oscillating of input inductivity and input capacitance can be clamped. The output capacitorC Q is necessary for the stability of the regulating circuit. Stability is guaranteed at valuesC Q ≥ 10 µF and an ESR ≤ 10 Ω within the operating temperature range. Type Ordering Code Package ▼ TLE 4266 G Q67006-A9152 P-SOT223-4-2 P-SOT223-4-2 TLE 4266 11.96
(top view) Pin Definitions and Functions Pin Symbol Function
1 VI Input voltage; block to ground directly at the IC with a ceramic
capacitor. 2 Inh Inhibit; low-active input. 3 VQ 5-V output voltage;block to ground with a≥ 10µF capacitor.
4 GND Ground
The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against:
- Overload,
- Overtemperature,
- Reverse polarity. Block Diagram
Tj = – 40 to 150°C Parameter Symbol Limit Values Unit Notes min. max. Input Voltage Vi – 42 45 V Current Ii internally limited Inhibit Voltage Ve – 42 45 V Output Voltage VQ – 1 16 V Current IQ internally limited GND Current IM 50 mA Temperature Junction temperature Tj 150 °C Storage temperature TS – 50 150 °C Operating Range Input voltage Vi 5.5 45 V Junction temperature Tj – 40 150 °C Thermal Resistance Junction ambient RthjA 100 K/W soldered Junction case RthjC 25 K/W
1) Drop voltage =Vi – VQ (measured when the output voltageVQ has dropped 100 mV from the nominal value obtained atVi = 13.5 V). Characteristics Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output voltage VQ 4.9 5 5.1 V 5 mA ≤ IQ ≤ 100 mA
6 V≤ Vi≤ 28 V
Iq =Ii –IQ Iq 01 0 µA Ve = 0 V;Tj≤ 100°C Current consumption Iq =Ii –IQ Iq 400 µA IQ = 1 mA Current consumption Iq =Ii –IQ Iq 10 15 mA IQ = 100 mA Drop voltage VDr 0.25 0.5 V IQ = 100 mA1) Load regulation ΔVQ 40 mV IQ = 5 to 100 mA Vi = 6 V Supply-voltage regulation ΔVQ 15 30 mV VI = 6 V to 28 V IQ = 5 mA Supply-voltage rejection SVR 54 dB fr = 100 Hz Vr = 0.5VSS Inhibit Inhibit on voltage Ve, on 3.5 V Inhibit off voltage Ve, off 0.8 V Inhibit current Ie 51 5 2 5 µA Ve = 5 V
Current ConsumptionIq versus Output CurrentIQ Current ConsumptionIq versus Input VoltageV i Current ConsumptionIq versus Output CurrentIQ
P-SOT223-4-2 (SMD) (Plastic Small Outline Transistor) Weight approx. 0.15 g GPS05560 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mmSMD = Surface Mounted Device