TLE4265 SIEMENS | Alldatasheet

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Technical content

Features

l Output voltage tolerance £ – 2 % l Low-drop voltage l Very low standby current consumption l Overtemperature protection l Reverse polarity protection l Short-circuit proof l Setable reset threshold l Wide temperature range l Suitable for use in automotive electronics P-TO220-5-1 P-TO220-5-2 TLE 4265

Semiconductor Group 2 1998-11-01 Pin Configuration (top view) Pin Definitions and Functions Pin Symbol Function

1 VI Input voltage; block direct on IC with ceramic capacitor to GND

2Q R E S Reset output; open-collector output connected to output across resistor of 30 kW 3G N D Ground 4D R E S Reset delay; wire with capacitor to GND for setting delay

5 VQ 5-V output voltage; block to GND with 22-mF capacitor

V QRES GND DRES VI Q P-TO220-5-1 P-TO220-5-2

Semiconductor Group 3 1998-11-01 Circuit Description The control amplifier compares a highly precise reference voltage, produced by resistor alignment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. A saturation control, a function of the load current, prevents any over-saturating of the power element. If the output voltage drops below 4.5 V, the external reset-delay capacitor is discharged by the reset generator. If the voltage on the capacitor reaches the lower threshold VST , a signal is triggered on the reset output and not canceled again until the upper threshold VdT is exceeded. The IC is protected against overload, overtemperature and reverse polarity. Saturation Control and Protection Adjustment Reset Generator Buffer Control Amplifier Temperature Sensor Bandgap Reference 1 5 Output Reset Delay Reset Output In- put GND AEB01493

Semiconductor Group 4 1998-11-01 Block Diagram Absolute Maximum Ratings TJ = – 40 to 150 °C Parameter Symbol Limit Values Unit Notes min. max. Input Input voltage VI – 42 45 V – Reset Output Voltage VR – 0.3 42 V – Reset Delay Voltage Vd – 0.3 42 V – Output Output voltage VQ – 0.3 7 V – Output current IQ – – – Limited internally GND Current IGND – 0.1 – A – Temperatures Junction temperature TJ –1 5 0 °C– Storage temperature Tstg – 50 150 °C– Operating Range Input voltage VI –4 5 V – Junction temperature TJ – 40 150 °C–

Semiconductor Group 5 1998-11-01 Optimum reliability and lifetime can be ensured in integrated circuits by not exceeding a junction temperature of 125°C during operation. Although operation up to the maximum permissible junction temperature of 150°C is possible, such boundary conditions, if sustained, may affect device reliability. Thermal Resistance Junction ambient Rthja –7 0 K / W – Junction-case Rthjc –1 0 K / W – Characteristics VI = 13.5 V; TJ = 25 °C (unless specified otherwise) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output voltage VQ 4 . 95 5 . 1V 5 m A £ IQ £ 150 mA

6 V £ VI £ 28 V

– 40 °C £ TJ £ 125 °C Output-current limitingIQ 200 250 – mA – Current consumption Iq = II – IQ Iq – 750 1000 mA IQ = 0 mA Current consumption Iq = II – IQ Iq – 1 01 5m A IQ = 150 mA Current consumption Iq = II – IQ Iq – 1 52 0m A IQ = 150 mA VI = 4.5 V Drop voltage VDr – 0.35 0.5 V IQ = 150 mA1) Load regulation DVQ ––2 5 m V IQ = 5 to 150 mA Absolute Maximum Ratings (cont’d) TJ = – 40 to 150 °C Parameter Symbol Limit Values Unit Notes min. max.

Semiconductor Group 6 1998-11-01 1) Drop voltage = VI – VQ (measured at point where VQ is 100 mV smaller than at VI = 13.5 V) Line regulation DVQ – 1 52 5m V VI = 6 to 28 V IQ = 150 mA Supply-voltage rejectionSVR –5 4 –d B fr = 100 Hz Vr = 0.5 Vpp Reset Generator Switching threshold VRT 4 . 24 . 54 . 8V – Saturation voltage VR –0 . 1 0 . 4 V IR = 1 mA Saturation voltage VC –5 0 1 0 0 m V VQ < VRT Charge current Ich 71 0 1 4 mA– Delay switching threshold Vdt 1 . 51 . 82 . 1V – Delay td –1 8 –m s C d = 100 nF Delay tt –2– ms C d = 100 nF Characteristics (cont’d) VI = 13.5 V; TJ = 25 °C (unless specified otherwise) Parameter Symbol Limit Values Unit Test Condition min. typ. max.

Semiconductor Group 7 1998-11-01 Test Circuit Application Circuit AES01494 TLE 4265 22 Fm IQ IR Ich IGND CV C D W5.6 k RV VQ m1000 F 470 nF II IV TLE 4265 22 Fm 15Input 6V to 45 V Output 470 nF 100 nF AES01495 2Reset To MC

Semiconductor Group 8 1998-11-01 TLE 4265 Drop Voltage versus Output Current Current Consumption versus Input Voltage Current Consumption versus Output Current Output Voltage versus Input Voltage AED01496 VDr IQ CT =2 5 100 200 300 400 500 mV 700 50 100 150 200 mA 300 j AED01498 qI = 10 20 30 50 RL IV V W25 mA AED01497 IQ mA 50 100 150 200 mA 300 Iq V I = 13.5 V AED01499 QV 24 6 10 IV V V

25 WLR =

Semiconductor Group 9 1998-11-01 TLE 4265 Charge Current versus Temperature Output Voltage versus Temperature Switching Voltage V dT and V ST versus Temperature Output Voltage versus Input Voltage AED01500 -40 Ich T V I = 13.5 V C0 40 80 160 A VC = m chI 1.5 V j AED01502 -40 Q T V I = 13.5 V C0 40 80 160 5.10 4.70 V 4.80 4.90 5.00 V j AED01501 -40 dT T V I = 13.5 V C0 40 80 160 0.4 0.8 1.2 1.6 2.0 2.4 V 3.2 VdT V j AED01503 IQ V mA 10 20 30 50

25 C=T

j j

Semiconductor Group 10 1998-11-01 Package Outlines 10+0.4 3.75+0.1 1.7 0.8 8.4±0.4 ±0.44.5 0.4+0.1 10.2 15.4±0.3 8.8-0.2 1.27+0.1 -0.210.2 +0.1 2.8 4.6-0.2 2.6 8.6±0.3 ±0.3 ±0.4 19.5 max 1x45˚ 1) 1 at dam bar (max 1.8 from body) 1) 1 im Dichtstegbereich (max 1.8 vom Körper) -0.15 -0.15 M0.6 P-TO220-5-1 (Plastic Transistor Single Outline) GPT05107 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm

Semiconductor Group 11 1998-11-01 10+0.4 3.75+0.1 1.7 0.8 ±0.15 0.4+0.1 15.4±0.3 8.8-0.2 1.27+0.1 -0.210.2 +0.1 2.8 4.6-0.2 2.6 10.9±0.2 ±0.212.9 1x45˚ 1) 1 at dam bar (max 1.8 from body) 1) 1 im Dichtstegbereich (max 1.8 vom Körper) -0.15 -0.15 M0.6 P-TO220-5-2 (Plastic Transistor Single Outline) GPT05256 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm