TLE4264G SIEMENS | Alldatasheet

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Technical content

Features

l Output voltage tolerance £ – 2 % l Low-drop voltage l Very low current consumption l Overtemperature protection l Short-circuit proof l Suitable for use in automotive electronics l Reverse polarity TLE 4264 G

Semiconductor Group 2 1998-11-01 Pin Configuration (top view) Circuit Description The control amplifier compares a reference voltage, which is kept highly precise by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control, working as a function of load current, prevents any over-saturation of the power element. The IC is additionally protected against overload, overtemperature and reverse polarity. Pin Definitions and Functions Pin Symbol Function VI Input voltage; block to ground directly on IC with ceramic capacitor 2, 4 GND Ground

3 VQ 5-V output voltage; block to ground with ‡ 10-mF

capacitor, ESR < 10 W AEP01526 123 GNDV QI V

Semiconductor Group 3 1998-11-01 Block Diagram Saturation Control and Protection Temperature Sensor Adjustment Bandgap Reference 2,4 1Input GND Output AEB01527 Circuit Amplifier Control Buffer

Semiconductor Group 4 1998-11-01 Absolute Maximum Ratings Tj = – 40 to 150°C Parameter Symbol Limit Values Unit Notes min. max. Input Input voltage VI –4 2 4 5 V – Input current II – – – limited internally Output Output voltage VQ –1 1 6 V – Output current IQ – – – limited internally Ground Current IGND 50 – mA – Temperatures Junction temperature Tj –1 5 0 °C– Storage temperature Tstg –5 0 1 5 0 °C– Operating Range Input voltage VI 5.5 45 V – Junction temperature Tj –4 0 1 5 0 °C– Thermal Resistances System-air Rth SA – 100 K/W soldered in System-case Rth SC –2 5 K / W –

Semiconductor Group 5 1998-11-01 Characteristics VI = 13.5 V; – 40°C £Tj £ 125 °C, unless specified otherwise Parameter Symbol Limit Values Unit Test Conditions min. typ. max. Output voltage VQ 4.9 5.0 5.1 V 5 mA £ IQ £ 100 mA 6V £ VI £ 28 V Output-current limiting IQ 120 150 – mA – Current consumption Iq = II –IQ Iq – – 400 mA IQ = 1 mA Current consumption Iq = II –IQ Iq – 1 01 5m A IQ = 100 mA Drop voltage Vdr – 0.25 0.5 V IQ = 100 mA1) Load regulation DVQ ––4 0 m V IQ = 5 to 100 mA VI = 6 V Supply-voltage regulation DVQ – 1 53 0m V VI = 6 to 28 V IQ = 5 mA Supply voltage suppression SVR –5 4 –d B fr = 100 Hz Vr = 0.5 Vpp 1) Drop voltage = VI – VQ (measured where VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V)

Semiconductor Group 6 1998-11-01 Application Circuit AES01528 TLE 4264G Output3 2,4 m10 F Input 5.5 to 45 V C i

Semiconductor Group 7 1998-11-01 TLE 4264 G Drop Voltage V Dr versus Output Current IQ Current Consumption Iq versus Output Current IQ Current Consumption Iq versus Input Voltage V i Current Consumption Iq versus Output Current IQ DrV IQ 100 200 300 400 500 600 mV 800 50 100 mA 17575 125 = C125 25 C= 700 jT jT IQ AED01980 mA 15050 100 Iq mA Vi = 13.5 V AED01979 R = Iq V L 50 W 10 20 30 V 50 mA W100L =R i IQ AED01981 mA 3010 20 Iq 0.5 1.0 1.5 2.0 mA 3.0 Vi = 13.5 V 5 15 2.5

Semiconductor Group 8 1998-11-01 TLE 4264 G Output Voltage V Q versus Temperature Tj Output Voltage V Q versus Input Voltage V i Output Current IQ versus Input Voltage V i 4.60 -40 AED01982 V Q 04 0 8 0 160 4.80 5.00 V 5.20 120 C 4.70 4.90 5.10 iV = 13.5 V jT AED01984 V Q 24 6 10 V LR =5 0 W iV V AED01983 = C125 25 C= QI V i 10 20 30 40 50 100 150 200 mA V jT jT

Semiconductor Group 9 1998-11-01 Package Outlines ±0.1 ±0.2 ±0.10.7 321 6.5 acc. to +0.2 DIN 6784 1.6±0.1 15˚max ±0.040.28 7±0.3 ±0.23.5 0.5 0.1 maxmin BM0.25 B A 2.3 4.6 AM0.25 P-SOT223-4-1 (Plastic Small Outline Transistor) Weight approx. 0.15 g GPS05560 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Dimensions in mmSMD = Surface Mounted Device