TLE4260 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Low-drop voltage
  • Very low quiescent current
  • Low starting current consumption
  • Integrated temperature protection
  • Protection against reverse polarity
  • Input voltage up to 42 V
  • Overvoltage protection up to 65 V ( £ 400 ms)
  • Short-circuit proof
  • Suited for automotive electronics
  • Wide temperature range
  • EMC proofed (100 V/m) Type Ordering Code Package t TLE 4260 Q67000-A8187 P-TO220-5-1 t TLE 4260 S Q67000-A9044 P-TO220-5-2 t Please also refer to the new pin compatible device TLE 4270 Functional Description TLE 4260; S is a 5-V low-drop fixed-voltage regulator in a P-TO220-5-H/S package. The maximum input voltage is 42 V (65 V/£ 400 ms). The device can produce an output current of more than 500 mA. It is shortcircuit-proof and incorporates temperature protection that disables the circuit at unpermissibly high temperatures. Due to the wide temperature range of – 40 to 150 °C, the TLE 4260; S is also suitable for use in automotive applications. The IC regulates an input voltage VI in the range 6 < VI < 35 V to VQnominal = 5.0 V. A reset signal is generated for an output voltage of VQ <4 . 7 5V . The reset delay can be set externally with a capacitor. If the output current is reduced below 10 mA, the regulator switches internally to standby and the reset generator is turned off. The standby current drops to max. 700 mA.

Semiconductor Group 2 1998-11-01 Pin Configuration (top view) Pin Definitions and Functions (TLE 4260 and TLE 4260 S) Pin No. Symbol Function

1 VI Input; block directly to ground at the IC by a 470-nF capacitor

2 QVRES Reset output; open collector output controlled by the reset

4 DRES Reset delay; wired to ground with a capacitor

5 VQ 5-V output voltage; block to ground with a 22-mF capacitor

V QVRES GND DRES VI Q TLE 4260 TLE 4260 S

Semiconductor Group 3 1998-11-01 Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage goes below 96% of its typical value, an external capacitor is discharged on pin 4 by the reset generator. If the voltage on the capacitor reaches the lower threshold V ST , a reset signal is issued on pin 2 and not cancelled again until the upper threshold VDT is exceeded. For an output current of less than IQN Off = 10 mA the standby changeover turns off the reset generator. The latter is turned on again when the output current increases, the output voltage drops below 4.2 V or the delay capacitor is discharged by external measures. The IC also incorporates a number of internal circuits for protection against:

  • O v e r l o a d
  • Overvoltage
  • Overtemperature
  • Reverse polarity Block Diagram Overvoltage Monitoring Saturation Control and Protection RESET Generator Temperature Sensor Adjustment BANDGAP Reference 1Input GND Output RESET Delay RESET AEB00578 Circuit STANDBY Changeover Amplifier Control Buffer

Semiconductor Group 4 1998-11-01 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. Input (Pin 1) Input voltage VI – 42 42 V – VI –6 5 V t£ 400 ms Input current II –1 . 6 A – Reset Output (Pin 2) Voltage VR – 0.3 42 V – Current IR – – – internally limited Ground (Pin 3) Current IGND –0 . 5 – A – Reset Delay (Pin 4) Voltage VD – 0.3 42 V – Current ID – – – internally limited Output (Pin 5) Differential voltage VI– VQ –5 . 2 5VI V– Current IQ –1 . 4 A – Temperature Junction temperature Tj –3 2 °C– Storage temperature Tstg – 50 150 °C–

Semiconductor Group 5 1998-11-01 Operating Range Parameter Symbol Limit Values Unit Remarks min. max. Input voltage VI –3 2 V 1) Junction temperature Tj – 40 165 °C– Thermal Resistances Junction ambient Rthja –6 5 K / W – Junction case Rthjc – 3 K/W – 1) See diagram “Output Current versus Input Voltage”

Semiconductor Group 6 1998-11-01 Characteristics VI=1 3 . 5 V ; Tj=2 5°C; (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Normal Operation Output voltage VQ 4.75 5.0 5.25 V 25 mA £ IQ £ 500 mA 6V £ VI £ 28 V Short -circuit currentISC 500 1000 – mA VI =17 V to 28 V; VQ = 0 V Current consumption Iq = II– IQ Iq –8 . 5 1 0 m A 1) 6V £ VI £ 28 V IQ = 150 mA Current consumption Iq = II– IQ Iq –5 0 6 5 m A 1) 6V £ VI £ 28 V IQ = 500 mA Current consumption Iq = II– IQ Iq ––8 0 m A 1) VI £ 6V IQ = 500 mA Drop voltage VDR –0 . 3 5 0 . 5 V VI = 4.5 V; IQ =0 . 5A Drop voltage VDR –0 . 2 0 . 3 V VI = 4.5 V; IQ =0 . 1 5A Load regulation DVQ –1 5 3 5 m V 2 5 m A £ IQ £ 500 mA Supply-voltage regulationDVQ –1 5 5 0 m V VI £ 6 V to 28 V; IQ = 100 mA Supply-voltage regulationDVQ –52 5 m V VI £ 6 V to 16 V; IQ = 100 mA Ripple rejection SVR –5 4 –d B f= 100 Hz; Vr =0 . 5Vpp Temperature drift of output voltage1) a VQ –2 · 10–4 –1 / °C– Standby Operation Quiscent current; Iq = II– IQ Iq – 500 700 mA1 0 V £ VI £ 16 V; IQ =0m A Quiscent current; Iq = II– IQ Iq – 750 850 mA1 0 V £ VI £ 16 V; IQ =5m A

Semiconductor Group 7 1998-11-01 Standby Off/Normal On Current consumption IqSOFF – 1.0 1.2 mA see test diagram Current consumption IqNON – 1.7 2.2 mA see test diagram Normal Off/Standby On Current consumption IqNOFF – 1.55 2.00 mA see test diagram Current consumption IqSON – 850 1050 mA see test diagram Switching threshold IQNOFF 7.5 10 12.5 mA see test diagram Switching hysteresis DIQ 2.25 3 4 mA see test diagram Reset Generator Switching threshold VRT 94 96 97 % in % of VQ ; IQ >5 0 0m A ;VI=6V Saturation voltage VR – 0.25 0.40 V IR =3m A ;VI=4 . 5V Reverse current IR ––1 mA VR =5V Charge current ID 71 0 1 3 mA– Switching threshold VST 0.9 1.1 1.3 V – Delay switching thresholdVDT 2.15 2.50 2.75 V – Delay time tD –2 5 –m s C D = 100 nF Delay time tt –5– ms C D = 100 nF General Data Turn-Off voltage VIOFF 40 43 45 V IQ <1m A Turn-Off hysteresis DVI –3 . 0 –V – Leakage current IQS –5 0 0 – mA VQ = 0V ; VI= 45 V Reverse output currentIQR ––1 . 5 m A VQ = 5V ; VI= open 1) See diagram Characteristics (cont’d) VI= 13.5 V; Tj=2 5°C; (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.

Semiconductor Group 8 1998-11-01 Application Circuit Test Circuit AES00579 TLE 4260 22 Fm 15Input 6V to 40V Output RESET 470 nF 100 nF 100 kW AES01509 TLE 4260-2 1000 Fm VI+VR RV QV II Id IGND IQ ISC IQS Cd 100 nF VC // IQR IR 22 Fm 1.8 kW QV+IVVDr = SVR VR VQD 470 nF = 20 log

Semiconductor Group 9 1998-11-01 Time Responce

Semiconductor Group 10 1998-11-01 Time Responce in Standby Condition

Semiconductor Group 11 1998-11-01 Standby/Normal Changeover Drop Voltage versus Output Current Output Voltage versus Temperature Current Consumption versus Output Current AED00583 I mA mA QI 89 1 0 11 12 13 14 16 0.5 1.0 1.5 2.0 2.5 IN ON OFFIN ONSI SI OFF OFFIQN QN I ON QDI AED00584 0 100 200 300 600 mA 400 800 QI 400 100 300 500 600 700 200 D Dr VI = 4.5 V = 25 C mV Tj AED00028 4.60 -40 VQ 0 40 80 160 4.70 4.80 4.90 5.00 5.10 5.20 V VI = 120 C j 13.5 V AED00585 I 100 200 300 600 mA mA = 13.5 VIV QI 400

Semiconductor Group 12 1998-11-01 Current Consumption versus Input Voltage Output Current versus Input Voltage Output Voltage versus Input Voltage AED00590 V I 10 20 30 50 V 100 120 mA RL = 10W I AED00587 V IQ 10 20 30 50 V A I 1.2 1.0 0.8 0.6 0.4 0.2 C= 25Tj AED00591 V VQ 24 61 0 V V RL = 10W I

Semiconductor Group 13 1998-11-01 Package Outlines 10+0.4 3.75+0.1 1.7 0.8 8.4±0.4 ±0.44.5 0.4+0.1 10.2 15.4±0.3 8.8-0.2 1.27+0.1 -0.210.2 +0.1 2.8 4.6-0.2 2.6 8.6±0.3 ±0.3 ±0.4 19.5 max 1x45˚ 1) 1 at dam bar (max 1.8 from body) 1) 1 im Dichtstegbereich (max 1.8 vom Körper) -0.15 -0.15 M0.6 P-TO220-5-1 (Plastic Transistor Single Outline) GPT05107Weigth approx. 2.1 g Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm

Semiconductor Group 14 1998-11-01 10+0.4 3.75+0.1 1.7 0.8 ±0.15 0.4+0.1 15.4±0.3 8.8-0.2 1.27+0.1 -0.210.2 +0.1 2.8 4.6-0.2 2.6 10.9±0.2 ±0.212.9 1x45˚ 1) 1 at dam bar (max 1.8 from body) 1) 1 im Dichtstegbereich (max 1.8 vom Körper) -0.15 -0.15 M0.6 P-TO220-5-1 (Plastic Transistor Single Outline) GPT05256Weigth approx. 2.1 g Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm