TLE4206-2G INFINEON | Alldatasheet
Document overview
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Technical content
Features
- Optimized for headlight beam control applications Delivers up to 0.8 A continuous Low saturation voltage ; typ.1.2 V total @ 25 °C; 0.4 A Output protected against short circuit Overtemperature protection with hysteresis Over- and undervoltage lockout No crossover current Internal clamp diodes Enhanced power packages Range low-voltage detection with hysteresis Green Product (RoHS compliant) AEC Qualified Type Ordering Code Package TLE 4206-2G on request PG-DSO-14-22
Description
The TLE 4206-2G is a protected H-Bridge Driver designed specifically for automotive headlight beam control and industrial servo co ntrol applications. The part is built using Infineons bipolar high voltage power technology DOPL. The standard enhanced power PG-DSO-14-22 package meets the application requirements and saves PCB-board space and costs. Moreover the package is RoHS compliant. The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and angle-amplification are programmable with external resistors. An internal window- comparator controls the input line. In the case of a fault condition, like short circuit to GND, short circuit to supply-voltage, and broken wire, the TLE 4206-2G stops the motor immediately (brake condition).
Data Sheet 2 V1.2 2008-02-04 Furthermore the built in features like ov er- and undervoltage-lockout, short-circuit- protection and over-temperature-protection will open a wide range of automotive- and industrial applications. The TLE 4206-2G is a design-version of the TLE 4206. In the TLE 4206-2G, the current peak blanking Pin is disconnected. A hyster esis is introduced at the lower RANGE threshold. This allows reliable de-activation of the device by pulling the RANGE input to GND also under critical application conditions. AEP02261 CPB 7 V OUT1 GND HYST FB OUT2 GND RANGE REF GND GND GND GND S PG-DSO-14-22 n.c. Figure 1 Pin Configuration (top view) Pin Definitions and Functions Pin No. PG-DSO-14-23 Symbol Function
1 FB Feedback Input
2 HYST Hysteresis I/O
3, 4, 5, 10, 11, 12 GND Ground
6 OUT1 Power Output 1
7 n.c. Not connected
8 VS Power Supply Voltage
9 OUT2 Power Output 2
13 RANGE Range Input
14 REF Reference Input
– n.c. Not connected
3,4,5, 10,11,12 TLE 4206-2G Note: Pin 7 is not connected Half- Bridge Half- Bridge TLE 4206-2G Data Sheet 3 V1.2 2008-02-04 Figure 2 Block Diagram
Data Sheet 4 V1.2 2008-02-04 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. Voltages Supply voltage VS – 0.3 45 V – Supply voltage VS – 1 – V t < 0.5 s; IS > – 2 A Logic input voltages (FB, REF, RANGE, HYST, CPB) VI – 0.3 20 V – Currents Output current (OUT1, OUT2) IOUT – – A internally limited Output current (Diode) IOUT – 1 1 A – Input current (FB, REF, RANGE, HYST) IIN – 2 – 6 mA mA t < 2 ms; t/T < 0.1 Temperatures Junction temperature Tj – 40 150 °C – Storage temperature Tstg – 50 150 °C – Thermal Resistances Junction pin (PG-DSO-14-22) Rthj-pin – 25 K/W measured to pin 5 Junction ambient (PG-DSO-14-22) RthjA – 65 K/W – Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Data Sheet 5 V1.2 2008-02-04 Operating Range Parameter Symbol Limit Values Unit Remarks min. max. Supply voltage VS 8 18 V After VS rising above VUV ON Supply voltage increasing VS – 0.3 VUV ON V Outputs in tristate Supply voltage decreasing VS – 0.3 VUV OFF V Outputs in tristate Output current IOUT1-2 – 0.8 0.8 A – Input current (FB, REF) IIN – 50 500 µA – Junction temperature Tj – 40 150 °C –
Data Sheet 6 V1.2 2008-02-04
Electrical Characteristics
8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C
(unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Current Consumption Supply current IS – 12 20 mA – Supply current IS – 20 30 mA IOUT1 = 0.4 A IOUT2 = – 0.4 A Supply current IS – 30 50 mA IOUT1 = 0.8 A IOUT2 = – 0.8 A Over- and Under Voltage Lockout UV Switch ON voltage VUV ON – 7.4 8 V VS increasing UV Switch OFF voltage VUV OFF 6.3 6.9 – V VS decreasing UV ON/OFF Hysteresis VUVHY – 0.5 – V VUV ON – VUV OFF OV Switch OFF voltage VOV OFF – 20.5 23 V VS increasing OV Switch ON voltage VOV ON 17.5 20 – V VS decreasing OV ON/OFF Hysteresis VOVHY – 0.5 – V VOV OFF – VOV ON
Data Sheet 7 V1.2 2008-02-04 Outputs OUT1-2 Saturation Voltages Source (upper ) IOUT = – 0.2 A VSAT U – 0.85 1.15 V Tj = 25 °C Source (upper ) IOUT = – 0.4 A VSAT U – 0.90 1.20 V Tj = 25 °C Sink (upper) IOUT = – 0.8 A VSAT U – 1.10 1.50 V Tj = 25 °C Sink (lower) IOUT = 0.2 A VSAT L – 0.15 0.23 V Tj = 25 °C Sink (lower) IOUT = 0.4 A VSAT L – 0.25 0.40 V Tj = 25 °C Sink (lower) IOUT = 0.8 A VSAT L – 0.45 0.75 V Tj = 25 °C Total drop IOUT = 0.2 A VSAT – 1.0 1.4 V VSAT = VSAT U + VSAT L Total drop IOUT = 0.4 A VSAT – 1.2 1.7 V VSAT = VSAT U + VSAT L Total drop IOUT = 0.8 A VSAT – 1.6 2.5 V VSAT = VSAT U + VSAT L Clamp Diodes Forward voltage; upper VFU – 1 1.5 V IF = 0.4 A Upper leakage current ILKU – – 5 mA IF = 0.4 A Forward voltage; lower VFL – 0.9 1.4 V IF = 0.4 A Electrical Characteristics (cont’d) (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.
Data Sheet 8 V1.2 2008-02-04 Input-Interface Input REF Quiescent voltage VREFq – 200 – mV IREF = 0 µA Input resistance RREF – 6 – kΩ 0 V < VREF < 0.5 V Input FB Quiescent voltage VFBq – 200 – mV IFB = 0 µA Input resistance RFB – 6 – kΩ 0 V < VFB < 0.5 V Input/Output HYST Current Amplification AHYST = IHYST / (IREF – IFB) AHYST 0.8 0.95 1.1 − – 20 µA < IHYST < – 10 µA; 10 µA < IHYST < 20 µA; IREF = 250 µA VHYST = VS / 2 Current Offset IHYSTIO – 2 0.35 3 µA IREF = IFB = 250 µA VHYST = VS / 2 Threshold voltage High VHYH / VS – 52 – % – Deadband voltage High VDBH / VS – 50.4 – % – Deadband voltage Low VDBL / VS – 49.6 – % – Threshold voltage Low VHYL / VS – 48 – % – Hysteresis Window VHYW / VS 3 4 5 % (VHYH – VHYL)/ VS Deadband Window VDBW / VS 0.4 0.8 1.2 % (VDBH – VDBL)/ VS Electrical Characteristics (cont’d) (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.
Data Sheet 9 V1.2 2008-02-04 Input RANGE Input current IRANGE – 1 – 1 µA 0 V < VRANGE < VS Switch-OFF voltage High VOFFH – 25 0 100 mV refer to VS Switch-OFF voltage Low VOFFL 310 390 490 mV refer to GND, VRANGE decreasing Switch-ON voltage Low VONL 400 500 550 mV refer to GND, VRANGE increasing Low-threshold hysteresis VOFFLHYS 50 110 - mV see Figure 6 Thermal Shutdown Thermal shutdown junction temperature TjSD 150 175 200 °C – Thermal switch-on junction temperature TjSO 120 – 170 °C – Temperature hysteresis ∆T – 30 – K – Electrical Characteristics (cont’d) (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.
100 kΩ RR 50 kΩ RREF 50 kΩ RFB 50 kΩ RHYL 100 kΩ VREFIN GND PREF 1 kΩ VS DZ 36 V OUT1 CS 20 µF OUT2 PFB 1 kΩ GND +VB+VB DR 1N4001 M TLE4206-2G TLE 4206-2G Data Sheet 10 V1.2 2008-02-04 Figure 3 Application Circuit
Expressions: OUT1V= HY VOUT2- -2.0% -0.4% 2.0%0.4% FBREFV( V-) / VS CCW Turn Brake Turn CW DBW HYW DBL DBH = Hysteresis DeadbandDB = HighH= LowL= WindowW= Status Motor HYL HYH TLE 4206-2G Data Sheet 11 V1.2 2008-02-04 Figure 4 Hysteresis, Phaselag and Deadband-Definitions
H L VOUT1 H L VREF(t) VFB(t) VS(t) t t t BB C W B C W B BMotor Status Testconditons: VS = VB; no reverse polarity voltage diode RHYH = RHYL = 100 kΩ RREF = RFB = 50 kΩ Start-Command Stop-Command B = Brake VOFFL CCW TLE 4206-2G Data Sheet 12 V1.2 2008-02-04 Figure 5 Timing and Phaselag
t t H L VOUT1 t H L VRANGE CCW Brake CCW RANGE REF FB HYST Voltage Ramp 37,5% VS Test Conditions RANGE Hysteresis Definition open open Motor Status Note: Test Temperature 125°C TLE 4206-2G Data Sheet 13 V1.2 2008-02-04 Figure 6 RANGE Hysteresis and Test Conditions
Data Sheet 14 V1.2 2008-02-04 Package Outlines PG-DSO-14-22 (Plastic Green - Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requireme nts for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Y ou can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mmSMD = Surface Mounted Device
Data Sheet 15 V1.2 2008-02-04
Revision History
Rev. 1.1 Rev. 1.2 2007-08-10 2008-02-04 RoHS-compliant version of the TLE 4206-2 All pages: Infineon logo updated Page 1: “AEC qualified” and “RoHS” logo added, “Green Product (RoHS compliant)” and “AEC qualified” statement added to feature list, package names changed to RoHS compliant versions, package pictures updated, ordering codes removed Page 14: Package names changed to RoHS compliant versions, “Green Product” description added Revision History added Legal Disclaimer added Update of Figure 3 (Application Circuit) Editorial change: deleted "fully" (The term "fully protected" often leads to misunderstandings as it is unclear with respect to which parameters); page 1 Update Package picture; page1 Update Figure 1; page 2
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© 2/4/08 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.