TF218 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Ultrasmall package facilitates miniaturization in end products.
  • Especially suited for use in audio, telephone capacitor microphones.
  • Excellent voltage characteristic.
  • Excellent transient characteristic.
  • Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO - -20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDO IG =- -100µA - -20 V Cutoff Voltage V GS(off) VDS =5V, ID =1µA - -0.2 - -0.6 - -1.0 V Zero-Gate Voltage Drain Current I DSS VDS =5V, VGS =0 140* 350* µA Forward Transfer Admittance yfs VDS =5V, VGS =0, f=1kHz 0.5 1.0 mS Input Capacitance Ciss V DS =5V, VGS =0, f=1MHz 3.5 pF Reverse Transfer Capacitance Crss V DS =5V, VGS =0, f=1MHz 0.65 pF Continued on next page. * : The TF218 is classified by IDSS as follows : (unit : µA) Marking A4 A5 IDSS 140 to 240 210 to 350 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TF218 Package Dimensions unit : mm 2201 [TF218] N3001 TS IM TA-3366 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-channel Silicon Junction FET 1.4 1.2 0.8 0.2 0.07 0.2 0.25 0.2 0.45 0.07 0.1 0.46 1 : Drain 2 : Source 3 : Gate SANYO : VSFP (Bottom view) (Top view)

No.7088-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit [Ta=25˚C, VCC =4.5V, RL=1kΩ , Cin=15pF, See specified Test Circuit.] Voltage Gain G V VIN=10mV, f=1kHz - -3.0 dB Reduced Voltage Characteristic ΔG VV VIN=10mV, f=1kHz, VCC =4.5→ 1.5V - -1.2 - -3.5 dB Frequency Characteristic ΔGvf f=1kHz to 110Hz - -1.0 dB Input Impedance Z IN f=1kHz 25 M Ω Output Impedance Z O f=1kHz 1000 Ω Total Harmonic Distortion THD V IN=30mV, f=1kHz 1.2 % Output Noise Voltage V NO VIN=0, A curve - -110 dB Test Circuit OSC 15pF +33µF VCC =4.5V VCC =1.5V V 1kΩ 1kΩ ABVTVM THD V oltage gain Frequency Characteristic Distortion Reduced V oltage Characteristic Output Impedance 500 400 300 200 100 ID -- VGSID -- VGS IT02312 IT02313 V DS =5V 400 320 240 160 IDSS =350 µA 250 µA 150 µA 01 89 1 0 234567 500 400 300 200 100 ID -- VDS IT02310 V GS =0 --0.1V --0.2V --0.4V Ta=75 --0.5V V DS =5V --25 --0.3V 012345 500 400 300 200 100 ID -- VDS IT03015 V GS =0 --0.1V --0.2V --0.4V --0.5V --0.3V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA 25°C 450 350 250 150 450 350 250 150 450 350 250 150 360 280 200 120

No.7088-3/4 0 100 200 300 400 500 G V -- IDSS IT02320 --1.7 --1.5 --1.3 --1.1 --0.9 --0.7 --0.5 ∆G VV -- IDSS IT02321 1.0 0.1 100 0 50 100 150 200 THD -- VIN IT02316 100 120 0 160 14012010080604020 PD -- Ta IT02317 VGS (off) -- IDSS IT02315 ∆G VV : VCC =4.5V→ 1.5V V IN=10mV f=1kHz IDSS : VDS =5.0V --7 --6 --5 --4 --3 --2 --1 G V : VCC =4.5V V IN=10mV R L=1.0kΩ f=1kHz IDSS : VDS =5.0V THD : VCC =4.5V f=1kHz IDSS : VDS =5.0V 300 350 400 450 500 550 600 650 700 0 100 200 300 400 500 0 100 200 300 400 500 V DS =5V ID =1µA 250µA 350µA IDSS =150µA 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 100 200 300 400 500 yfs -- IDSS IT02314 V DS =5V V GS =0 f=1kHz 1.0 1.0 10 23 5 772 3 Ciss -- VDS ITR02641 1.0 0.1 1.0 10 23 5 772 3 Crss -- VDS ITR02642 Drain Current, IDSS -- µA Forward Transfer Admittance, yfs -- mS Drain Current, IDSS -- µA Cutoff Voltage, VGS (off) -- V Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Drain Current, IDSS -- µA V oltage Gain, GV -- dB Drain Current, IDSS -- µA Reduced V oltage Characteristics, ∆G VV -- dB V GS =0 f=1MHz V GS =0 f=1MHz

No.7088-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of Nobember, 2001. Specifications and information herein are subject to change without notice. PS 0 100 200 300 400 500 ZIN -- IDSS IT02323 910 920 930 940 950 960 900 ZO -- IDSS IT02324 --119 --118 --117 --116 --115 --114 --113 --112 --111 --120 VNO -- IDSS IT02325 V NO : VCC =4.5V V IN=0, ACurve R L=1.0kΩ IDSS : VDS =5.0V ZO : VCC =4.5V V IN=10mV f=1kHz IDSS : VDS =5.0V Zi : VCC =4.5V V IN=10mV f=1kHz IDSS : VDS =5.0V 0 100 200 300 400 500 0 100 200 300 400 500 0 100 200 300 400 500 THD -- IDSS IT02322 0.5 1.0 1.5 2.0 2.5 THD : V CC =4.5V V IN=30mV f=1MHz IDSS : VDS =5.0V Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % Drain Current, IDSS -- µA Input Impedance, ZIN -- MΩ Drain Current, IDSS -- µA Output Impedance, ZO -- Ω Drain Current, IDSS -- µA Output Noise V oltage, VNO -- dB