TF202 SANYO | Alldatasheet
Document overview
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Technical content
Features
- Especially suited for use in electret condenser microphone.
- Ultrasmall package permitting TF202 applied sets to be made small and slim.
- Excellent voltage characteristics.
- Excellent transient characteristics.
- Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO - -20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDO IG =- -100µA - -20 V Cutoff Voltage V GS(off) VDS =5V, ID =1µA - -0.2 - -0.6 - -1.2 V Zero-Gate Voltage Drain Current I DSS VDS =5V, VGS =0 140* 500* µA Forward Transfer Admittance yfs VDS =5V, VGS =0, f=1kHz 0.5 1.2 mS Input Capacitance Ciss V DS =5V, VGS =0, f=1MHz 3.5 pF Reverse Transfer Capacitance Crss V DS =5V, VGS =0, f=1MHz 0.65 pF Continued on next page. * : The TF202 is classified by IDSS as follows : (unit : µA) Rank E4 E5 E6 IDSS 140 to 240 210 to 350 320 to 500 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TF202 Package Dimensions unit : mm 2207A [TF202]
82903 TS IM TA-100524
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-channel Junction FET 1 : Drain 2 : Source 3 : Gate SANYO : SSFP 0.6 0.25 0.2 0.070.07 1.4 0.45 0.3 0.3 1.4 0.8 0.1 Top View Side View Side View Bottom View
No.7554-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit [Ta=25˚C, VCC =4.5V, RL=1kΩ , Cin=15pF, See specified Test Circuit.] Voltage Gain G V VIN=10mV, f=1kHz - -3.0 dB Reduced Voltage Characteristics ΔG VV VIN=10mV, f=1kHz, VCC =4.5→ 1.5V - -1.2 - -3.5 dB Frequency Characteristics ΔGvf f=1kHz to 110Hz - -1.0 dB Input Resistance Z IN f=1kHz 25 m Ω Output Resistance Z O f=1kHz 1000 Ω Total Harmonic Distortion THD V IN=30mV, f=1kHz 1.0 % Output Noise Voltage V NO VIN=0, A curve - -110 dB Test Circuit OSC 15pF +33µF V oltage gain Frequency Characteristics Distortion Reduced V oltage Characteristics Output Impedance 1kΩ VCC =4.5V VCC =1.5V V ABVTVM THD 400 300 200 100 312 5 4 IT05907 400 300 200 100 106428 --0.1V --0.2V --0.3V --0.4V--0.5V V GS =0 IT05908 600 400 200 200 µA 400 µA 300 µAIDSS =500 µA V GS =0 V DS =5V --0.1V --0.2V --0.3V --0.4V--0.5V IT05909 --1.0 600 400 200 Ta=75 25°C --25 IT05910 V DS =5V ID -- VGSID -- VGS ID -- VDS ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA
No.7554-3/4 IT05915 --8 --6 --4 --2 23 5 7 10007 100 G V : VCC =4.5V V IN=10mV R L=1.0kΩ f=1kHz IDSS : VDS =5.0V 1.0 10 23 5 772 3 IT05913 V GS =0 f=1MHz 1.0 1.0 10 23 5 772 3 IT05914 V GS =0 f=1MHz IT05916 --4 --2 23 5 7 10007 100 ∆G VV : VCC =4.5VÝ 1.5V V IN=10mV f=1kHz IDSS : VDS =5.0V IT05917 23 5 7 10007 100 THD : VCC =4.5V V IN=30mV f=1MHz IDSS : VDS =5.0V IT05918 23 5 7 10007 100 Zi : VCC =4.5V V IN=10mV f=1kHz IDSS : VDS =5.0V --1.0 10007510072 3 IT05912 1.0 100010077 532 IT05911 V DS =5V V GS =0 f=1kHz V DS =5V ID =1µA G V -- IDSS ∆G VV -- IDSS VGS (off) -- IDSSyfs -- IDSS Ciss -- VDS Crss -- VDS Drain Current, IDSS -- µA Forward Transfer Admittance, yfs -- mS Drain Current, IDSS -- µA Cutoff Voltage, VGS (off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Drain Current, IDSS -- µA V oltage Gain, GV -- dB Drain Current, IDSS -- µA Reduced V oltage Characteristics, ∆G VV -- dB Zi -- IDSSTHD -- IDSS Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % Drain Current, IDSS -- µA Input Impedance, Zi -- MΩ
No.7554-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2003. Specifications and information herein are subject to change without notice. PS 100 120 0 20 40 60 80 100 120 140 160 ITR02650 1.0 0 40 80 120 160 200 240 ITR02649 THD : VCC =4.5V f=1kHz IDSS : VDS =5.0V IDSS =140 µA 250µA 400µA IT05919 23 5 7 10007 100 Zo : VCC =4.5V V IN=10mV f=1kHz IDSS : VDS =5.0V IT05920 --120 --118 --116 --114 --112 --110 23 5 7 10007 100 V NO : VCC =4.5V V IN=0, ACurve R L=1.0kΩ IDSS : VDS =5.0V Zo -- IDSS VNO -- IDSS Drain Current, IDSS -- µA Output Impedance, Zo -- Ω Drain Current, IDSS -- µA Output Noise V oltage, VNO -- dB THD -- VIN PD -- Ta Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW 700 800 900 1000 1100