TF256TH SANYO | Alldatasheet

Document overview

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Technical content

Features

  • High gain : G V=2.7dB typ (VCC=2V , RL=2.2kΩ, Cin=5pF, VIN=10mV , f=1kHz)
  • Ultrasmall package facilitates miniaturization in end products
  • Best suited for use in electret condenser microphone for audio equipments and telephones
  • Excellent transient characteristics
  • Adoption of FBET process
  • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage VGDO - -20 V Gate Current IG 10 mA Drain Current ID 1m A Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7031-001

10511 TKIM TC-00002535/N2509GB TKIM TC-00002097

N-channel Silicon Juncton FET Electret Condenser Microphone

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : VTFP
  • JEITA, JEDEC : SC-106A
  • Minimum Packing Quantity : 8,000 pcs./real Packing Type: TL Marking Electrical Connection TL N Rank Top View Bottom View 0.45 1.4 0.8 1.2 0.20.2 0.340.07 0.07 1 2 0.25 0.2 0.1 1 : Drain 2 : Source 3 : Gate SANYO : VTFP

No. A1617-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit Rank min typ max Gate-to-Drain Breakdown Voltage V (BR)GDO IG=- -100μA - -20 V Cutoff Voltage VGS(off) V DS=2V, ID=1μA - -0.1 - -0.35 - -1.0 V Drain Current I DSS*V DS=2V, VGS=0V 3 100 180 μA4 140 280 5 240 450 Forward Transfer Admittance | yfs | VDS=2V, VGS=0V, f=1kHz 0.75 1.7 mS Input Capacitance Ciss V DS=2V, VGS=0V, f=1MHz 3.1 pF Reverse Transfer Capacitance Crss V DS=2V, VGS=0V, f=1MHz 1.0 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF , See specifi ed Test Circuit.] Voltage Gain G V VIN=10mV, f=1kHz 3 1.0 dB4 2.0 5 3.0 Reduced Voltage Characteristic ΔGVV VIN=10mV, f=1kHz, VCC=2.0V → 1.5V 3 - -0.5 - -1.0 dB4 - -0.6 - -1.3 5 - -0.9 - -2.0 Frequency Characteristic ΔGvf f=1kHz to 110Hz - -1.0 dB Total Harmonic Distortion THD V IN=30mV, f=1kHz 3 1.4 %4 0.9 5 0.35 Output Noise Voltage VNO VIN=0V, A curve - -105 - -100 dB * : The TF256TH is classifi ed by IDSS as follows : (unit : μA) Marking N3 N4 N5 Rank 3 4 5 IDSS 100 to 180 140 to 280 240 to 450 Test Circuit OSC 5pF +33μF 2.2kΩ VCC=2.0V VCC=1.5V VVTVM THD V oltage gain Frequency Characteristic Distortion Reduced V oltage Characteristic ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- μA ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA 400 300 350 200 250 100 150 IT15213 --0.10V --0.05V --0.15V --0.20V --0.25V --0.30V VGS=0V 450 350 250 150 500 400 300 200 100 IT16271 VDS=2V IDSS =450 μA 300 μA 150 μA 100 μA

No. A1617-3/5 VGS(off) -- IDSS | yfs | -- IDSS Ciss -- VDS Crss -- VDS Drain Current, IDSS -- μA Forward Transfer Admittance, | yfs | -- mS Drain Current, IDSS -- μA Cutoff Voltage, VGS(off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA GV -- IDSS Drain Current, IDSS -- μA V oltage Gain, GV -- dB IT15218 1.0 1.0 10 23 5 735 7 2 VGS=0V f=1MHz 1.0 1.0 10 23 5 735 7 2 IT15219 VGS=0V f=1MHz VDS=2V Ta=75 25°C --25 450 350 250 150 400 300 200 100 IT15215 GV -- Cin Electret Capacitance, Cin -- pF V oltage Gain, GV -- dB GV -- VCC Supply V oltage, VCC -- V V oltage Gain, GV -- dB 0.20 0.15 0.10 0.05 0.25 0.30 0.35 0.40 0.45 0.50 VDS=2V ID=1μA 0.5 1.0 1.5 2.0 2.5 50 200 300 400 500100 150 250 350 450 IT16272 50 100 200 300 400 500150 250 350 450 --0.5 2.0 3.0 2.5 1.0 0.5 1.5 3.5 50 100 200 300 400 500150 250 350 450 IT16273 VDS=2V VGS=0V f=1kHz IT16274 GV : VCC=2V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V 01234 6 5 --3 --2 --1 IT16275 IT16276 GV : VIN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS=450μA 300μA 150μA 02468 1 6 12 1410 --10 --8 --6 --4 --2 GV : VCC=2V V IN=10mV f=1kHz R L=2.2kΩ IDSS=450μA 300μA 150μA 100μA 100μA

No. A1617-4/5 THD -- IDSS Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % THD -- VIN Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % ΔGVV -- IDSS Drain Current, IDSS -- μA Reduced V oltage Characteristic, ΔGVV -- dB IT16279 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0.2 1.0 2.4 2.0 2.2 THD : VCC=2V V IN=30mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V 100 1.0 0.1 0 50 100 150 200 IT16278 --1.6 --1.4 --1.2 --1.0 --0.8 --0.4 --0.6 --0.2 ΔGVV : VCC=2V→1.5V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V THD : VCC=2V f=1kHz R L=2.2kΩ Cin=5pF 50 100 200 300 400 500150 250 350 450 50 100 200 300 400 500150 250 350 450 IT16277 IDSS=100μA 300μA 450μA 150μA PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW 100 120 0 160 14012010080604020 IT15227

No. A1617-5/5PS This catalog provides information as of January, 2011. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.