TF252TH-4-TL-H

TF252TH_12 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

• High gain : G V=1.0dB typ (VCC=2V , RL=2.2kΩ, Cin=5pF, VIN=10mV , f=1kHz)
• Ultrasmall package facilitates miniaturization in end products
• Best suited for use in electret condenser microphone for audio equipments and telephones
• Excellent voltage characteristics
• Excellent transient characteristics
• Adoption of FBET process
• Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO - -20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7031A-001 TF252TH N-channel Silicon Juncton FET Electret Condenser Microphone

Applications

Product & Package Information

• Package : VTFP
• JEITA, JEDEC : SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel Packing Type: TL Marking Electrical Connection 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 1.4 1.2 0.25 0.2 0.45 0.1 0 to 0.02 TL TF252TH-4-TL-H TF252TH-5-TL-H LOT No. LOT No.D RANK

No. A0842-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate-to-Drain Breakdown Voltage V (BR)GDO IG=- -100μA - -20 V Cutoff Voltage V GS(off) V DS=2V, ID=1μA - -0.1 - -0.4 - -1.0 V Drain Current I DSS VDS=2V, VGS=0V 140* 350* μA Forward Transfer Admittance | yfs | VDS=2V, VGS=0V, f=1kHz 0.8 1.4 mS Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.1 pF Reverse Transfer Capacitance Crss 0.95 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF , See specifi ed Test Circuit.] Voltage Gain G V VIN=10mV, f=1kHz 1.0 dB Reduced Voltage Characteristic ΔGVV VIN=10mV, f=1kHz, VCC=2.0V → 1.5V - -0.6 - -2.0 dB Frequency Characteristic ΔGvf f=1kHz to 110Hz - -1.0 dB Total Harmonic Distortion THD V IN=30mV, f=1kHz 0.65 % Output Noise Voltage VNO VIN=0V, A curve - -106 - -102 dB * : The TF252TH is classifi ed by IDSS as follows : (unit : μA) Rank 4 5 IDSS 140 to 240 210 to 350 Test Circuit

Ordering Information

Device Package Shipping memo TF252TH-4-TL-H VTFP 8,000pcs./reel Pb Free and Halogen Free TF252TH-5-TL-H VTFP 8,000pcs./reel OSC 5pF +33μF 2.2kΩ VCC=2V VCC=1.5V VVTVM THD V oltage gain Frequency Characteristic Distortion Reduced V oltage Characteristic

No. A0842-3/7 ID -- VDS ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- μA Drain-to-Source V oltage, VDS -- V Drain Current, ID -- μA 0 0.5 2.0 1.0 1.5 300 200 250 100 150 IT12440 VGS=0V --0.10V --0.15V --0.05V --0.20V --0.30V--0.25V IT12441 01 5 234 350 300 200 250 100 150 VGS=0V --0.1V --0.2V --0.4V--0.3V VGS(off) -- IDSS| yfs | -- IDSS Ciss -- VDS Crss -- VDS Zero-Gate V oltage Drain Current, IDSS -- μA Forward Transfer Admittance, | yfs | -- mS Zero-Gate V oltage Drain Current, IDSS -- μA Cutoff Voltage, VGS(off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V ID -- VGSID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA --0.20 --0.25 --0.30 --0.35 --0.40 --0.55 --0.50 --0.45 --0.60 VDS=2V ID=1μA 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 100 150 200 250 300 400 350 IT12444 100 150 200 250 300 400 350 IT12445 VDS=2V VGS=0V f=1kHz 1.0 1.0 10 23 5 7752 3 IT12446 VGS=0V f=1MHz IT12447 1.0 1.0 10 23 5 7752 3 VGS=0V f=1MHz 400 300 200 100 IT12442 IT12443 IDSS =350 μA 250 μA 150 μA 350 250 150 VDS=2V 400 300 200 100 Ta=75 --25 350 250 150 VDS=2V Reverse Transfer Capacitance, Crss -- pF

No. A0842-4/7 GV -- IDSS ΔGVV -- IDSS Zero-Gate V oltage Drain Current, IDSS -- μA V oltage Gain, GV -- dB Zero-Gate V oltage Drain Current, IDSS -- μA Reduced V oltage Characteristic, ΔGVV -- dB IT12448 --1.0 --0.8 --0.6 --0.4 --0.2 --0.9 --0.7 --0.5 --0.3 --0.4 --0.2 0.4 0.8 1.2 0.2 0.6 1.0 1.8 1.6 1.4 100 150 200 250 300 400 350 IT12449 100 150 200 250 300 400 350 GV : VCC=2V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V ΔGVV : VCC=2V→1.5V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW THD -- VIN Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % THD -- IDSS Zero-Gate V oltage Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % 1.0 0.1 0 50 100 150 200 IT12450 100 150 200 250 300 400 350 250μA 350μA IDSS=150μA IT12451 0.2 0.4 0.6 1.0 0.8 1.2 1.4 THD : VCC=2V V IN=30mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V THD : VCC=2V f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS=2V 100 120 0 20 40 60 80 100 120 140 160 IT12453

No. A0842-5/7 Taping Specifi cation TF252TH-4-TL-H, TF252TH-5-TL-H

No. A0842-6/7 Outline Drawing Land Pattern Example TF252TH-4-TL-H, TF252TH-5-TL-H Mass (g) Unit mm Unit: mm 0.0012 * For reference 0.5 0.4 0.45 0.45 0.45 0.45 1.1

PS No. A0842-7/7 This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.