TF250TH SANYO | Alldatasheet
Document overview
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Technical content
Features
- Ultrasmall package facilitates miniaturization in end products.
- Especially suited for use in electret condenser microphone for audio equipments and telephones.
- Excellent voltage characteristics.
- Excellent transient characteristics.
- Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO - -20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDO IG =- -100µA - -20 V Cutoff Voltage V GS (off) V DS =2V, ID =1µA - -0.1 - -0.4 - -1.0 V Zero-Gate Voltage Drain Current I DSS VDS =2V, VGS =0V 140* 350* µA Forward Transfer Admittance yfs VDS =2V, VGS =0V, f=1kHz 0.7 1.3 mS Input Capacitance Ciss V DS =2V, VGS =0V, f=1MHz 2.8 pF Reverse Transfer Capacitance Crss V DS =2V, VGS =0V, f=1MHz 0.55 pF Marking: C Continued on next page. * : The TF250TH is classified by IDSS as follows : (unit : µA) Rank 45 IDSS 140 to 240 210 to 350 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82506GB MS IM TC-00000099 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TF250TH N-channel Silicon Junction FET Electret Condenser Microphone
Applications
No. A0381-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit [Ta=25°C, VCC =2V, RL=2.2kΩ , Cin=5pF, See specified Test Circuit.] Voltage Gain G V VIN=10mV, f=1kHz 0.8 dB Reduced Voltage Characteristic ΔG VV VIN=10mV, f=1kHz, VCC =2→ 1.5V - -0.7 - -2.0 dB Frequency Characteristic ΔGvf f=1kHz to 110Hz - -1.0 dB Total Harmonic Distortion THD V IN=30mV, f=1kHz 0.6 % Output Noise Voltage V NO VIN=0V, A curve - -100 dB Package Dimensions Test Circuit unit : mm (typ) 7031-001 ID -- VDS ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA 0 0.5 2.0 1.0 1.5 300 200 250 100 150 IT10917 V GS =0V --0.1V --0.2V --0.4V--0.3V IT10918 01 5 234 300 200 250 100 150 V GS =0V --0.1V --0.2V --0.4V--0.3V OSC 5pF +33µF 2.2kΩ VCC =2V VCC =1.5V VVTVM THD V oltage gain Frequency Characteristic Distortion Reduced V oltage Characteristic Top View Bottom View 0.45 1.4 0.8 1.2 0.20.2 0.340.07 0.07 1 2 0.25 0.2 0.1 1 : Drain 2 : Source 3 : Gate SANYO : VTFP
No. A0381-3/4 G V -- IDSS ΔG VV -- IDSS VGS (off) -- IDSSyfs -- IDSS Ciss -- VDS Crss -- VDS Drain Current, IDSS -- µA Forward Transfer Admittance, yfs -- mS Drain Current, IDSS -- µA Cutoff Voltage, VGS (off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Drain Current, IDSS -- µA V oltage Gain, GV -- dB Drain Current, IDSS -- µA Reduced V oltage Characteristic, ΔG VV -- dB 0 100 200 300 400 500 IT10925 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 IT10926 IT10922 ΔG VV : VCC =2V → 1.5V V IN=10mV f=1kHz IDSS : VDS =2V --0.6 --0.4 --0.2 0.4 0.8 1.2 0.2 0.6 1.0 1.4 G V : VCC =2V V IN=10mV f=1kHz R L=2.2kΩ Cin=5pF IDSS : VDS =2V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 0 100 200 300 400 500 0 100 200 300 400 500 V DS =2V ID =1µA 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 IT10921 V DS =2V V GS =0V f=1kHz 1.0 1.0 10 23 5 7752 3 IT10923 V GS =0V f=1MHz IT10924 1.0 0.1 1.0 10 23 5 7752 3 V GS =0V f=1MHz ID -- VGSID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA 400 300 200 100 IT10919 IT10920 IDSS =350 µA 250 µA 150 µA 350 250 150 V DS =2V 400 300 200 100 Ta=75 --25 350 250 150 V DS =2V
No. A0381-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW 100 120 0 160 14012010080604020 IT10929 THD -- VIN Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % THD -- IDSS Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % 1.0 0.1 100 0 50 100 150 200 IT10927 THD : VCC =2V f=1kHz IDSS : VDS =2V 250µA 350µA IDSS =150µA 0 100 200 300 400 500 IT10928 0.2 0.4 0.6 1.0 0.8 1.2 1.4 THD : V CC =2V V IN=30mV f=1kHz IDSS : VDS =2V This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice.