TF246 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Ultrasmall package facilitates miniaturization in end products.
  • Especially suited for use in electret condenser microphone for audio equipments and telephones.
  • Excellent voltage characteristics.
  • Excellent transient characteristics.
  • Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO --20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 30 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V (BR)GDO IG =--100µA- -20 V Cutoff Voltage V GS(off) VDS =5V, ID =1µA- -0.2 - -0.6 - -1.0 V Zero-Gate Voltage Drain Current I DSS VDS =5V, VGS =0V 140* 350* µA Making : F Continued on next page. * : The TF246 is classified by IDSS as follows : (unit : µA) Rank 4 5 IDSS 140 to 240 210 to 350 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40407GB TI IM TC-00000316 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. TF246 N-channel Silicon Junction FET Electret Condenser Microphone Applications

No. A0729-2/4 01 89 1 0 234567 500 400 300 200 100 ID -- VDS IT02310 V GS =0V --0.1V --0.2V --0.4V --0.5V --0.3V 012345 500 400 300 200 100 ID -- VDS IT03015 V GS =0V --0.1V --0.2V --0.4V --0.5V --0.3V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA Drain-to-Source V oltage, VDS -- V Drain Current, ID -- µA 450 350 250 150 450 350 250 150 OSC 15pF +33µF Voltage gain Frequency Characteristic Distortion Reduced V oltage Characteristic Output Impedance 1kΩ VCC =4.5V VCC =1.5V V ABVTVM THD Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Forward Transfer Admittance yfs VDS =5V, VGS =0V, f=1kHz 0.5 1.0 mS Input Capacitance Ciss V DS =5V, VGS =0V, f=1MHz 3.5 pF Reverse Transfer Capacitance Crss V DS =5V, VGS =0V, f=1MHz 0.65 pF [Ta=25°C, VCC =4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] Voltage Gain G V VIN=10mV, f=1kHz - -3.0 dB Reduced Voltage Characteristic ∆G VV VIN=10mV, f=1kHz, VCC =4.5→1.5V - -0.9 - -3.5 dB Frequency Characteristic ∆Gvf f=1kHz to 110Hz - -1.0 dB Total Harmonic Distortion THD V IN=30mV, f=1kHz 1.2 % Output Noise Voltage V NO VIN=0V, A curve - -110 dB Package Dimensions Test Circuit unit : mm (typ) 7055-001 1 : Drain 2 : Source 3 : Gate SANYO : USFP /K30/K2E/K36 /K30/K2E/K32 /K30/K2E/K31/K30/K2E/K31/K30/K2E/K32/K37 /K30/K2E/K30/K35/K30/K2E/K30/K35 /K31/K2E/K30 /K30/K2E/K38 /K30/K2E/K31/K31 /K30/K74 /K6F /K30/K2E/K30/K32 /K30/K2E/K31/K35 /K30/K2E/K31/K37/K35 /K31/K32 /K33 /K31/K32 /K33

No. A0729-3/4 0 100 200 300 400 500 --1.7 --1.5 --1.3 --1.1 --0.9 --0.7 --0.5 ∆G VV -- IDSS IT02321 VGS (off) -- IDSS IT12277 ∆G VV : VCC =4.5V→1.5V V IN=10mV f=1kHz IDSS : VDS =5.0V -0.40 -0.45 -0.50 -0.55 -0.60 -0.65 -0.70 -0.75 -0.80 0 100 200 300 400 500 V DS =5V ID =1µA 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 100 200 300 400 500 yfs -- IDSS IT02314 V DS =5V V GS =0V f=1kHz 1.0 1.0 10 23 5 772 3 Ciss -- VDS IT03814 1.0 0.1 1.0 10 23 5 772 3 Crss -- VDS IT03815 Drain Current, IDSS -- µA Forward Transfer Admittance, yfs -- mS Drain Current, IDSS -- µA Cutoff Voltage, VGS (off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF Drain Current, IDSS -- µA Reduced V oltage Characteristic, ∆G VV -- dB V GS =0V f=1MHz V GS =0V f=1MHz 500 400 300 200 100 ID -- VGSID -- VGS IT02312 IT02313 V DS =5V 400 320 240 160 IDSS =350 µA 250 µA 150 µA Ta=75 V DS =5V --25 Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- µA 25°C 450 350 250 150 360 280 200 120 G V -- IDSS Drain Current, IDSS -- µA Voltage Gain, GV -- dB IT09954 --6 --5 --4 --3 --2 --1 G V : VCC =4.5V V IN=10mV R L=1.0kΩ f=1MHz IDSS : VDS =5.0V 0 100 200 300 400 500

No. A0729-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS --119 --118 --117 --116 --115 --114 --113 --112 --111 --120 VNO -- IDSS IT02325 V NO : VCC =4.5V V IN=0V , ACurve R L=1.0kΩ IDSS : VDS =5.0V 0 100 200 300 400 500 Drain Current, IDSS -- µA Output Noise V oltage, VNO -- dB PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW 1.0 0.1 100 05 0 100 150 200 THD -- VIN IT02316 THD : VCC =4.5V f=1kHz V IN=30mV IDSS : VDS =5.0V 250µA 350µA IDSS =150µA Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % 0 16014012010080604020 IT12179 THD -- IDSS Drain Current, IDSS -- µA Total Harmonic Distortion, THD -- % 0 100 200 300 400 500 IT09955 0.5 1.0 1.5 2.0 2.5 THD : V CC =4.5V V IN=30mV f=1MHz IDSS : VDS =5.0V This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice.