TF202THC SANYO | Alldatasheet

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Technical content

Features

  • Ultrasmall package facilitates miniaturization in end products.
  • Especially suited for use in electret condenser microphone for audio equipments and telephones.
  • Excellent voltage characteristics.
  • Excellent transient characteristics.
  • Adoption of FBET process.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage V GDO - -20 V Gate Current I G 10 mA Drain Current I D 1m A Allowable Power Dissipation P D 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Gate-to-Drain Breakdown Voltage V (BR)GDO IG=- -100μA - -20 V Cutoff Voltage V GS(off) VDS=5V, ID=1μA - -0.2 - -0.6 - -1.0 V Continued on next page. 82008GB TI IM TC-00001480 SANYO Semiconductors DATA SHEET TF202THC N-channel Silicon Juncton FET Electret Condenser Microphone

Applications

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No.A1285-2/5 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Drain Current IDSS VDS=5V, VGS=0V 140* 350* μA Forward Transfer Admittance | yfs | VDS=5V, VGS=0V, f=1kHz 0.5 1.0 mS Input Capacitance Ciss V DS=5V, VGS=0V, f=1MHz 3.5 pF Reverse Transfer Capacitance Crss V DS=5V, VGS=0V, f=1MHz 0.65 pF [Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF , See specifi ed Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz - -3.0 dB Reduced Voltage Characteristic ΔGVV VIN=10mV, f=1kHz, VCC=4.5V → 1.5V - -1.2 - -3.5 dB Frequency Characteristic ΔGvf f=1kHz to 110Hz - -1.0 dB Input Impedance ZIN f=1kHz 25 M Ω Output Impedance ZO f=1kHz 1000 Ω Total Harmonic Distortion THD V IN=30mV, f=1kHz 1.2 % Output Noise Voltage VNO VIN=0V, A Curve - - 110 dB Package Dimensions Test Circuit unit : mm (typ) 7031-001 Top View Bottom View 0.45 1.4 0.8 1.2 0.20.2 0.340.07 0.07 1 2 0.25 0.2 0.1 1 : Drain 2 : Source 3 : Gate SANYO : VTFP * : The TF202THC is classifi ed by IDSS as follows : (unit : μA) Marking E4 E5 Rank 4 5 IDSS 140 to 240 210 to 350 OSC 15pF +33μF V oltage gain Frequency Characteristic Distortion Reduced V oltage Characteristic Output Impedance 1kΩ VCC=4.5V VCC=1.5V V ABVTVM THD 01 89 1 0 234567 500 400 300 200 100 ID -- VDS IT02310 --0.1V --0.2V --0.4V --0.5V --0.3V 012345 500 400 300 200 100 ID -- VDS IT03015 VGS=0V --0.1V --0.2V --0.4V --0.5V --0.3V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- μA Drain-to-Source V oltage, VDS -- V Drain Current, ID -- μA 450 350 250 150 450 350 250 150 VGS=0V

No.A1285-3/5 --7 --6 --5 --4 --3 --2 --1 0 100 200 300 400 500 VGS(off) -- IDSS IT02315 -0.30 -0.35 -0.40 -0.45 -0.50 -0.55 -0.60 -0.65 -0.70 0 100 200 300 400 500 VDS=5V ID=1μA 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 100 200 300 400 500 | yfs | -- IDSS IT02314 VDS=5V VGS=0V f=1kHz 1.0 1.0 10 23 5 772 3 Ciss -- VDS IT03814 1.0 0.1 1.0 10 23 5 772 3 Crss -- VDS IT03815 Drain Current, IDSS -- μA Forward Transfer Admittance, | yfs | -- mS Drain Current, IDSS -- μA Cutoff Voltage, VGS(off) -- V Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF VGS=0V f=1MHz VGS=0V f=1MHz 500 400 300 200 100 ID -- VGSID -- VGS IT02312 IT02313 VDS=5V 400 320 240 160 IDSS =350 μA 250 μA 150 μA Ta=75 VDS=5V --25 Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA Gate-to-Source V oltage, VGS -- V Drain Current, ID -- μA 25°C 450 350 250 150 360 280 200 120 0 100 200 300 400 500 GV -- IDSS IT13910 --1.7 --1.5 --1.3 --1.1 --0.9 --0.7 --0.5 ΔGVV -- IDSS IT13911 ΔGVV : VCC=4.5V→1.5V V IN=10mV f=1kHz R L=1.0kΩ Cin=15pF IDSS : VDS=5.0V GV : VCC=4.5V V IN=10mV f=1kHz R L=1.0kΩ Cin=15pF IDSS : VDS=5.0V Drain Current, IDSS -- μA V oltage Gain, GV -- dB Drain Current, IDSS -- μA Reduced V oltage Characteristic, ΔGVV -- dB

No.A1285-4/5 0 100 200 300 400 500 ZIN -- IDSS IT02323 910 920 930 940 950 960 900 ZO -- IDSS IT02324 --119 --118 --117 --116 --115 --114 --113 --112 --111 --120 VNO -- IDSS IT13913 VNO : VCC=4.5V V IN=0V , ACurve R L=1.0kΩ Cin=15pF IDSS : VDS=5.0V ZO : VCC=4.5V V IN=10mV f=1kHz IDSS : VDS=5.0V ZIN :VCC=4.5V V IN=10mV f=1kHz IDSS : VDS=5.0V 0 100 200 300 400 500 0 100 200 300 400 500 Drain Current, IDSS -- μA Input Impedance, ZIN -- MΩ Drain Current, IDSS -- μA Output Impedance, ZO -- Ω Drain Current, IDSS -- μA Output Noise V oltage, VNO -- dB 0 100 200 300 400 500 THD -- IDSS IT13912 0.5 1.0 1.5 2.0 2.5 Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % 1.0 0.1 100 0 50 100 150 200 THD -- VIN IT02316 THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 250μA 350μA IDSS=150μA Input V oltage, VIN -- mV Total Harmonic Distortion, THD -- % 100 120 0 160 14012010080604020 PD -- Ta IT02317Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW THD : VCC=4.5V V IN=30mV f=1kHz R L=1.0kΩ Cin=15pF IDSS : VDS=5.0V

No.A1285-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of August, 2008. Specifi cations and information herein are subject to change without notice.