TCR8BM | DigiCamel IC Datasheet

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Rev.4.0 1 © 2018-2022 Toshiba Electronic Devices & Storage Corporation TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR8BM series 800 mA CMOS Ultra Low Dropout Regulator 1. Description The TCR8BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a refere nce voltage that allows ultra low drop out of 170 mV (Typ.) at IOUT = 800 mA (1.1 V output, VBIAS = 3.3 V). These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 800 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR 8BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and output capacitors can be used with the TCR8BM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. 2. Application Power IC developed for portable applications 3. Features  Low dropout voltage VDO = 170 mV (Typ.) at 1.1 V output, VBIAS = 3.3 V, IOUT = 800 mA  Low stand-by current (IBIAS(OFF) = 1 μA (Max))  Low quiescent bias current (IBIAS(ON) = 20 μA (Typ.) at VBIAS = 5.5 V, IOUT = 0 mA)  Wide range output voltage line up (VOUT = 0.8 to 3.6 V)  Overcurrent protection  Thermal shutdown  Inrush current reduction  Under voltage lockout (TCR8BMxxA products)  Auto-discharge  Pull down connection between CONTROL and GND  Ultra small package DFN5B (1.2 mm x 1.2 mm ; t 0.38 mm) DFN5B Weight : 1.4 mg (Typ.) Start of commercial production 2018-08

Rev.4.0 2 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 4. Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board dimension : 40 mm x 40 mm (4layer)，t = 1.8 mm Metal pattern ratio : approximately 70% each layer) 5. Operating Ranges Characteristics Symbol Rating Unit Bias voltage VBIAS (VOUT + 1.4 ≥ 2.5) to 5.5 V Input voltage VIN VOUT + VDO to VBIAS V Control voltage VCT 0 to VBIAS V Output voltage VOUT 0.8 to 3.6 V Output current IOUT 0 to 0.8 (Note 2) A Operation Temperature Topr −40 to 85 °C COUT COUT ≥ 2.2 μF ― CIN CIN ≥ 1.0 μF ― CBIAS CBIAS ≥ 0.1 μF ― Note 2: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum operating ranges output current specification defined as lifetime average junction temperature of +45°C where max rated DC current = lifetime average current to avoid electro migration. 6. Pin Assignment (top view) Characteristics Symbol Rating Unit Bias voltage VBIAS -0.3 to 6.0 V Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 600 (Note 1) mW Junction temperature Tj -40 to 150 °C Storage temperature range Tstg −55 to 150 °C VOUT CONTROL *Center electrode is GND VIN VBIAS

Rev.4.0 3 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 7. List of Products Number, Output voltage and Marking * Please contact your local Toshiba representative if you are interested in products with * sign TCR8BMxxA products have under voltage lockout function. Top Marking (top view) Product No. VOUT(V)(Typ.) Marking Product No. VOUT(V)(Typ.) Marking TCR8BM08A* 0.8 0P8 TCR8BM19A* 1.9 1P9 TCR8BM085A* 0.85 0PJ TCR8BM20A* 2.0 2P0 TCR8BM09A* 0.9 0P9 TCR8BM21A* 2.1 2P1 TCR8BM095A* 0.95 0PK TCR8BM22A* 2.2 2P2 TCR8BM10 1.0 1M0 TCR8BM23A* 2.3 2P3 TCR8BM10A* 1.0 1P0 TCR8BM24A* 2.4 2P4 TCR8BM105 1.05 1MA TCR8BM25A* 2.5 2P5 TCR8BM105A* 1.05 1PA TCR8BM26A* 2.6 2P6 TCR8BM11 1.1 1M1 TCR8BM27A* 2.7 2P7 TCR8BM11A* 1.1 1P1 TCR8BM28A* 2.8 2P8 TCR8BM115A* 1.15 1PB TCR8BM285A* 2.85 2PJ TCR8BM12 1.2 1M2 TCR8BM29A* 2.9 2P9 TCR8BM12A* 1.2 1P2 TCR8BM295A* 2.95 2PK TCR8BM125A* 1.25 1PC TCR8BM30A* 3.0 3P0 TCR8BM13A* 1.3 1P3 TCR8BM31A* 3.1 3P1 TCR8BM14A* 1.4 1P4 TCR8BM32A* 3.2 3P2 TCR8BM15A* 1.5 1P5 TCR8BM33A* 3.3 3P3 TCR8BM16A* 1.6 1P6 TCR8BM34A* 3.4 3P4 TCR8BM17A* 1.7 1P7 TCR8BM35A* 3.5 3P5 TCR8BM18A* 1.8 1P8 TCR8BM36A* 3.6 3P6 1M0 INDEX Lot code Example: TCR8BM10 (1.0 V output)

Rev.4.0 4 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 8. Block Diagram * Under voltage lockout is applied TCR8BMxxA products. VIN VOUT GND CONTROL VBIAS Thermal shutdown Current Limit Control Logic Pull down Under voltage lockout *Option

Rev.4.0 5 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 9. Electrical Characteristics (Unless otherwise specified, VBIAS = 3.3 V or VOUT + 1.9 V whichever is greater, VIN = VOUT + 0.5 V, CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = 0.1 μF) Note 3: Stable state with fixed IOUT condition Note 4: Except Control pull down current Note 5: The 1.0 V output product Note 6: VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the output voltage when VIN = VOUT + 0.5 V. VIN1 is the input voltage at which the output voltage becomes 97% of VOUT1 after gradually decreasing the input voltage. Note 7: The 0.8 V output product. Note 8: This parameter is guaranteed by design. Note 9: Under voltage lockout is applied TCR8BMxxA products. Characteristics Symbol Test Condition Tj = 25°C Tj = -40 to 85°C (Note 8) Unit Min Typ. Max Min Max Output voltage accuracy VOUT IOUT = 50 mA (Note 3) VOUT < 1.8 V -18 ― +18 ― ― mV Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 0.1 ― ― ― mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 800 mA (Note 5) ― 10 ― ― ― mV Quiescent current (Note 4) IBIAS (ON) IOUT = 0 mA, VBIAS current ― 20 ― ― 36 μA IIN (ON) IOUT = 0 mA, VIN current ― 3 ― ― 6 Stand-by current IBIAS (OFF) VCT = 0 V, VBIAS current ― 0.1 ― ― 1.0 μA IIN (OFF) VCT = 0 V, VIN current ― ― 0.5 ― ― μA Control pull down current ICT ― ― 0.1 ― ― ― μA Dropout voltage VDO IOUT = 800 mA, VBIAS = 3.3 V VOUT = 1.1 V (Note 6) ― 170 ― ― 245 mV Under voltage lockout (Note 9) VUVLO VIN voltage ― 0.6 ― ― 0.75 V Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ― 70 ― ― ― ppm/°C Output noise voltage VNO VBIAS = 3.3 V, VIN = VOUT + 0.5 V IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz (Note 7) Ripple rejection ratio R.R. VBIAS = 3.3 V, VIN = VOUT + 1 V IOUT = 10 mA, f = 1 kHz VIN Ripple = 200 mVp-p (Note 7) ― 98 ― ― ― dB Load transient response ∆VOUT IOUT = 1 mA to 800 mA (Note 5) ― -100 ― ― ― mV IOUT = 800 mA to 1 mA (Note 5) ― 100 ― ― ― Control voltage (ON) VCT (ON) ― 0.9 ― VBIAS 1.0 VBIAS V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 0 0.4 V Current limit ICL ― ― 1100 ― 850 ― mA Output discharge on resistance RSD ― ― 10 ― ― ― Ω

Rev.4.0 6 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 10. Dropout voltage (CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = 0.1 μF, Tj = 25°C) Output voltages VBIAS input voltage IOUT = 800 mA Unit Min Typ. Max (Note 10) 0.8 V 3.3 V ― 150 210 mV 0.85 V 3.3 V ― 155 215 mV 0.9 V 3.3 V ― 155 220 mV 0.95 V 3.3 V ― 160 225 mV 1.0 V 3.3 V ― 165 230 mV 1.05 V 3.3 V ― 165 240 mV 1.1 V 3.3 V ― 170 245 mV 1.15 V 3.3 V ― 175 255 mV 1.2 V 3.3 V ― 180 260 mV 1.25 V 3.3 V ― 185 275 mV 1.3 V 3.3 V ― 190 285 mV 1.4 V 3.3 V ― 205 320 mV 1.5 V 3.4 V ― 205 315 mV 1.6 V 3.5 V ― 205 310 mV 1.7 V, 1.8 V VOUT + 1.9 V ― 200 305 mV 1.9 V, 2.0 V VOUT + 1.9 V ― 200 300 mV 2.1 V, 2.2 V VOUT + 1.9 V ― 200 295 mV 2.3 V ≤ VOUT ≤ 2.6 V VOUT + 1.9 V ― 195 290 mV 2.7 V ≤ VOUT ≤ 3.6 V VOUT + 1.9 V ― 195 285 mV Note 10: Tj = -40 to 85 °C This parameter is guaranteed by design

Rev.4.0 7 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 11. Application Note Example of Application Circuit The figure above shows the Example of configuration for using a Low dropout regulator. Insert a capacitor at VIN, VOUT and VBIAS pins for stable input/output operation. (Ceramic capacitors can be used). Power Dissipation Board-mounted power dissipation ratings for TCR8BM series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown in below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (4layer)，t = 1.8 mm Metal pattern ratio: approximately 70% each layer VOUT GND VIN ON/OFF 1.0 μF 0.1 μF VBIAS CONTROL RL LOAD 2.2 μF VBIAS CL CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF

Capacitors(Output, Input, and Bias Capacitor) Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. For stable operation, please use over 1.0 μF input capacitor, 0.1 μF bias capacitor and 2.2 μF output ceramic capacitor.
Recommending for Control Pin Operation This device is optimized to operate the best performance when turn on and off with control pin. Esp ecially the rush current and bias current can be suppressed by using control pin after applying VIN and VBIAS. TCR8BMxxA products have VIN under voltage lockout function, bias current is suppressed at low VIN even when VBIAS and VCT are applied.
Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also V IN and GND pattern need to be large and make the wire impedance small as possible.
Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent.
Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect th e electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook ’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design.

Rev.4.0 9 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 0.5 1 1.5 Output Voltage VOUT (V) Output Current IOUT (A) VOUT = 1.2 V (VIN = 1.7 V, VBIAS = 3.3 V) 100 120 140 160 180 200 0 100 200 300 400 500 600 700 800 Dropout Voltage VDO (mV) Output Current IOUT (mA) VOUT = 1.2 V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 0.5 1 1.5 Output Voltage VOUT (V) Output Current IOUT (A) VOUT = 1.8 V (VIN = 2.5 V, VBIAS = 3.5 V) 12. Representative Typical Characteristics Dropout Voltage vs. Output Current (VIN = VOUT + 1 V) Output Current Limit (Ta = 25°C)

Rev.4.0 10 © 2018-2022 Toshiba Electronic Devices & Storage Corporation Ripple rejection Ratio vs. Frequency (CIN = none, COUT = 2.2 μF, VIN = 2.2 V, VBIAS = 3.3 V, VIN Ripple = 200mVp-p, Ta = 25°C) 100 120 10 100 1k 10k 100k 1M Ripple Rejection Ratio (dB) Frequency f (Hz) VOUT = 1.2 V 10 mA 50 mA

Rev.4.0 11 © 2018-2022 Toshiba Electronic Devices & Storage Corporation tON / tOFF Response (CIN = 1.0 µF, COUT = 2.2 μF, VIN = VOUT + 0.5 V, VBIAS = 3.3 V, VCONTROL = 0 V⇔1 V, Ta = 25°C)  IOUT = 0 mA  IOUT = 800 mA VOUT = 1.2V VOUT = 1.2V 50µs/div IOUT: 100 mA/div VOUT: 500 mV/div 50µs/div IOUT: 100 mA/div VOUT: 500 mV/div VCONTROL: 1 V/div VCONTROL: 1 V/div 50µs/div IOUT: 1 A/div VOUT: 500 mV/div VCONTROL: 1 V/div 50µs/div IOUT: 1 A/div VOUT: 500 mV/div VCONTROL: 1 V/div

Rev.4.0 12 © 2018-2022 Toshiba Electronic Devices & Storage Corporation Load Transient Response (CIN = 1 μF, COUT = 2.2 μF, VIN = 1.7 V, VOUT = 1.2 V, VBIAS = 3.3 V, IOUT = 1 mA ⇔ 800 mA, tr = 1μs, tf = 1μs, Ta = 25°C) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VOUT: 100 mV/div IOUT: 500 mA/div 500 µs/div

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Product Information

TCR8BM specifications and overview.

Summary

800 mA CMOS Ultra Low Dropout Regulator 2022-09-02 Rev.4.0

Description

800 mA CMOS Ultra Low Dropout Regulator 2022-09-02 Rev.4.0

Source title TCR8BM Datasheet(PDF) - Toshiba Semiconductor

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