TCR6DA1831

TCR6DA1528 TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• Low quiescent bias current ( IB(ON) = 60 μA (typ.)at IOUT (A) and IOUT (B) = 0 mA )
• Low stand-by current ( I B(OFF) = 0.1 μA (typ.) at stand-by mode )
• Low dropout voltage ( VIN - VOUT = 200 mV (max.) for 3.3V output, IOUT = 50 mA )
• High output current ( I OUT = 200 mA (max) )
• High ripple rejection ( R.R. = 75 dB (typ.) at I OUT = 10 mA, f =1kHz )
• Control voltage can be allowed from -0.3 to 6V regardless of V IN voltage
• Overcurrent protection
• Ceramic capacitors can be used ( C IN = 1.0μF, COUT =1.0 μF )
• SM6(SOT-26) (SC-74) and small pa ckage UF6 (2.0 mm x 2.1 mm x 0.7 mm) Pin Assignment (top view) SM6(SOT-26) (SC-74) UF6 SM6 UF6 Weight SM6(SOT-26)(SC-74): 15 mg (typ.) UF6 : 7 mg (typ.) VOUT(A) CONTROL(B) VIN VOUT(B) CONTROL(A) 1 3 2 4 6 5 GND 5 6 4 1 2 3 CONTROL(A) VIN CONTROL(B) VOUT(A) VOUT(B) GND

List of Products Number and Marking Products No. Package VOUT (A) VOUT(B) Marking *TCR6DA1525 SM6 1.5V 2.5V AGS TCR6DA1528 SM6 1.5V 2.8V AGW *TCR6DA1529 SM6 1.5V 2.9V AGX *TCR6DA1530 SM6 1.5V 3.0V AGY *TCR6DA1531 SM6 1.5V 3.1V AG1 *TCR6DA1533 SM6 1.5V 3.3V AG3 *TCR6DA1825 SM6 1.8V 2.5V AKS TCR6DA1828 SM6 1.8V 2.8V AKW *TCR6DA1829 SM6 1.8V 2.9V AKX TCR6DA1830 SM6 1.8V 3.0V AKY *TCR6DA1831 SM6 1.8V 3.1V AK1 *TCR6DA1833 SM6 1.8V 3.3V AK3 *TCR6DA1525U UF6 2.5V 1.5V ASG TCR6DA1528U UF6 2.8V 1.5V AWG *TCR6DA1529U UF6 2.9V 1.5V AXG *TCR6DA1530U UF6 3.0V 1.5V AYG *TCR6DA1531U UF6 3.1V 1.5V A1G *TCR6DA1533U UF6 3.3V 1.5V A3G *TCR6DA1825U UF6 2.5V 1.8V ASK TCR6DA1828U UF6 2.8V 1.8V AWK *TCR6DA1829U UF6 2.9V 1.8V AXK *TCR6DA1830U UF6 3.0V 1.8V AYK *TCR6DA1831U UF6 3.1V 1.8V A1K *TCR6DA1833U UF6 3.3V 1.8V A3K TCR6DA2530U UF6 3.0V 2.5V AYS *If you need another voltage ranks, please contact to our sales Marking Example:TCR6DA1828U (2.8V, 1.8V output) AWK AKW Example:TCR6DA1828 (1.8V, 2.8V output)

Absolute Maximum Ratings(Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6 V Control voltage VCT -0.3 to 6 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA SM6 480 (Note1) mW Power dissipation PD UF6 500 (Note1) mW Operation temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Rating at mounting on a board (25.4mm x 25.4mm x 1.6mm, copper pad:645mm

Electrical Characteristics

(Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) For 1.5 and 1.8V output Characteristics Symbol Test Condition Min. Typ. Max. Unit Output voltage VOUT Please refer to the Output Voltage Accuracy table Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 6 V, IOUT = 1 mA ⎯ 1 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 100 mA ⎯ 15 30 mV Quiescent current IB IOUT = 0 mA ⎯ 30 75 μA Dropout voltage VIN-VOUT Please refer to the Dropout voltage table Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ⎯ 100 ⎯ ppm/°C VOUT = 1.5V 2.0 ⎯ 6.0 Input voltage VIN ⎯ VOUT = 1.8V 2.15 ⎯ 6.0 V Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C ⎯ 75 ⎯ dB For 2.5 to 3.3V output Characteristics Symbol Test Condition Min. Typ. Max. Unit Output voltage VOUT Please refer to the Output Voltage Accuracy table Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 6 V, IOUT = 1 mA ⎯ 1 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 100 mA ⎯ 15 30 mV Quiescent current IB IOUT = 0 mA ⎯ 30 75 μA Dropout voltage VIN-VOUT Please refer to the Dropout voltage table Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ⎯ 100 ⎯ ppm/°C Input voltage VIN ⎯ VOUT(A) +0.2V ⎯ 6.0 V Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C ⎯ 75 ⎯ dB Common Characteristics Characteristics Symbol Test Condition Min. Typ. Max. Unit Quiescent current IB(ON) IOUT (A)= 0 mA, IOUT (B)= 0 mA ⎯ 60 150 μA Quiescent current IB(OFF) IOUT = 0 mA ⎯ 0.1 1 μA Control voltage (ON) VCT (ON) ⎯ 1.1 ⎯ 6.0 V Control voltage (OFF) VCT (OFF) ⎯ 0 ⎯ 0.3 V Control current (ON) ICT (ON) V CT = 6.0 V ⎯ ⎯ 0.1 μA Control current (OFF) ICT (OFF) V CT = 0 V ⎯ ⎯ 0.1 μA

(VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Symbol Min. Typ. Max. Unit 1.47 1.5 1.53 1.76 1.8 1.84 2.45 2.5 2.55 2.74 2.8 2.86 2.84 2.9 2.96 2.94 3.0 3.06 3.03 3.1 3.17 VOUT 3.23 3.3 3.37 V ・Dropout Voltage ( IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Symbol Output Voltage Min. Typ. Max. Unit

1.5 V ⎯ 300 500

1.8 V ⎯ 200 350 VIN-VOUT

2.5 to 3.3 V ⎯ 90 200 mV

1. Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor to V OUT and VIN for stable input/output operation. (ceramic capacitors can be used) If the control function is not used, Toshiba recommend that the control pin is connected to the VIN pin. 2. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material : Glass epoxy Board dimension : 25.4mm x 25.4mm, t = 1.6mm Pad dimension : 645mm CONTROL Voltage Output Voltage CONTROL(A) CONTROL(B) V OUT(A) V OUT(B) High High ON ON High Low ON OFF Low High OFF ON Low Low OFF OFF VOUT(A) VIN CONTROL(A) 1.0 μF 1.0 μF CONTROL(B) VOUT(B) 1.0 μF GND 1 2 3 45 6 PD - Ta (UF6) 200 400 600 -40 0 40 80 120Ambient Temperature Ta (℃) Power Dissipation PD (mW) PD - Ta (SM6) 200 400 600 -40 0 40 80 120 Ambient Temperature Ta (℃) Power Dissipation PD (mW)

• Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selectin g capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω.
• Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also GND pattern need to be large and make the wire impedance small as possible.
• Permissible Loss Please have enough board design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc, please apply proper dissipation ratings for maximum permissible loss.
• Overcurrent Protection Circuit Overcurrent protection circuit is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might be break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semicon ductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba reco mmend inserting failsafe system into the design.

Representative Typical Characteristics 1) Output Voltage vs. Input Voltage 2) Output Voltage vs. Output Current Vout=2.5V Vout=1.5V Vout=1.8V Vout=1.5V Vout=1.8V Output current I OUT ( m A ) Input voltage V IN (V) Output voltage V OUT (V) 0 1 4 6 1.5 2.0 0.5 1.0 CIN = 1 μF, COUT = 1 μF 2 3 5 50 mA IOUT = 1 mA Input voltage V IN (V) Output voltage V OUT (V) 0 1 4 6 CIN = 1 μF, COUT = 1 μF 2 3 5 50 mA IOUT = 1 mA Output voltage V OUT (V) 1.7 1.8 1.9 VIN = 2.8V, CIN = 1 μF, COUT = 1 μF 0 60 100 200 20 40 80 120 140 160 180 Output voltage V OUT (V) 1.4 1.5 1.6 VIN = 2.5 V, CIN = 1 μF, COUT = 1 μF 0 60 100 200 Output current I OUT ( m A ) 20 40 80 120 140 160 180 Input voltage V IN (V) Output voltage V OUT (V) 0 1 4 6 1.5 0.5 2.5 CIN = 1 μF, COUT = 1 μF 2 3 5 50 mA IOUT = 1 mA

3) Output Voltage vs. Ambient temperature Vout=2.5V Vout=1.5V Vout=1.8V Vout=2.5V Output current I OUT ( m A ) Output voltage V OUT (V) 2.4 2.5 2.6 VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF 0 60 100 200 20 40 80 120 140 160 180 −50 1.48 −25 0 25 75 50 1.49 1.5 1.51 1.52 VIN = 2.5 V, CIN = 1 μF, COUT = 1 μF IOUT = 50 mA 100 Ambient temperature T a ( ° C ) Output voltage VOUT (V) −50 1.78 −25 0 25 75 50 1.79 1.8 1.81 1.82 VIN = 2.8 V, CIN = 1 μF, COUT = 1 μF IOUT = 50 mA 100 Ambient temperature T a ( ° C ) Output voltage V OUT (V) −50 2.48 −25 0 25 75 50 2.49 2.5 2.51 2.52 VIN = 3.5V, CIN = 1 μF, COUT = 1 μF IOUT = 50 mA 100 Ambient temperature T a ( ° C ) Output voltage V OUT (V)

4) Dropout Voltage vs. Output Current 5) Quiescent Current vs. Input Voltage IOUT = 0 mAIOUT = 0 mA Vout=2.5V Dropout voltage V IN - VOUT (mV) 100 200 300 400 0 40 100 200 Output current I OUT ( m A ) 80 180 120 140 160 60 20 Vout=1.5V Quiescent current I B ( μA) CIN = 1 μF, COUT = 1 μF 1 4 6 2 3 5 Input voltage V IN (V) Vout=2.5V 500 25°C Quiescent current IB ( μA) CIN = 1 μF, COUT = 1 μF 1 4 6 2 3 5 Input voltage V IN (V) CIN = 1 μF, COUT = 1 μF,

6) Quiescent current vs. Ambient temperature 7) Overcurrent Protection Characteristics Vout=2.5V Quiescent current I B ( μA) Vout=1.5V Vout=1.5V Quiescent current I B ( μA) Quiescent current I B ( μA) Vout=1.8V Vout=1.8V Output voltage V OUT (V) Pulse width = 50 ms 2.0 2.5 0 100 400 600 VIN = 2.5 V 200 300 500 1.5 1.0 0.5 VIN = 6.0 V Output current I OUT ( m A ) Output voltage V OUT (V) Pulse width = 50 ms 2.0 2.5 0 100 400 600 VIN = 2.8 V 200 300 500 Output current I OUT ( m A ) 1.5 1.0 0.5 VIN = 6.0 V Ambient temperature T a ( ° C ) −50 −25 0 25 100 75 50 100 VIN = 2.5 V, CIN = 1 μF, COUT = 1μF, 50 mA 0 mA IOUT = 150 mA Ambient temperature T a ( ° C ) −50 −25 0 25 100 75 50 100 VIN = 2.8 V, CIN = 1 μF, COUT = 1μF, 50 mA 0 mA IOUT = 150 mA Ambient temperature T a ( ° C ) −50 −25 0 25 100 75 50 100 VIN = 3.5 V, CIN = 1 μF, COUT = 1μF, IOUT = 150 mA 50 mA 0 mA

8) Ripple rejection Raito vs. Frequency Vout=2.5V Frequency f (Hz) Ripple Rejection Raito (dB) 10 100 1 k 10 k 100 k 300 k VIN = 4.0 V ,Vripple = 500 mVp−p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C Vout=2.5V Output voltage V OUT (V) Pulse width = 50 ms 4.0 5.0 0 100 400 600 VIN = 6.0 V 200 300 500 3.0 2.0 1.0 VIN = 3.5 V Output current I OUT ( m A )

9) Control Transient Response 10) Load Transient Response Vout=1.5V (I OUT = 50m to 100mA) Vout=1.5V (IOUT = 100m to 50mA) Vout=1.5V (IOUT = 1m to 30mA) Vout=1.5V (IOUT = 30m to 1mA) Output current IOUT (20mA/div) Output voltage Δ VOUT (50mV/div) Time t ( 20 μs/div ) VIN = 3.8 V, CIN = 1 μF, COUT = 1 μF Vout=2.5V (Turn on wave form) VIN = 4.0 V, CIN = 1 μF, COUT = 1 μF IOUT = 50 mA Control voltage VCT (ON) (1V/div) Output voltage Δ VOUT (1V/div) Time t ( 100 μs/div ) Vout=2.5V (Turn off wave form) Control voltage VCT (OFF) (1V/div) VIN = 4.0 V, CIN = 1 μF, COUT = 1 μF IOUT = 50 mA Output voltage Δ VOUT (1V/div) Time t ( 100 μs/div ) Output current IOUT (20mA/div) Output voltage Δ VOUT (50mV/div) Time t ( 10 μs/div ) VIN = 3.8 V, CIN = 1 μF, COUT = 1 μF Output voltage Δ VOUT (50mV/div) Output current IOUT (50mA/div) Time t ( 10 μs/div ) VIN = 3.8 V, CIN = 1 μF, COUT = 1 μF Output current IOUT (50mA/div) Output voltage Δ VOUT (50mV/div) Time t ( 20 μs/div ) VIN = 3.8 V, CIN = 1 μF, COUT = 1 μF

Vout=2.5V (IOUT =30m to 1mA) Vout=2.5V (I OUT = 1m to 30mA) Vout=2.5V (IOUT = 50m to 100mA) Vout=2.5V (IOUT = 100m to 50mA) Output current IOUT (50mA/div) Output voltage Δ VOUT (50mV/div) Time t ( 20 μs/div ) VIN = 4 V, CIN = 1 μF, COUT = 1 μF Output voltage Δ VOUT (50mV/div) Output current IOUT (20mA/div) Time t ( 10 μs/div ) VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF Output current IOUT (20mA/div) Output voltage Δ VOUT (50mV/div) Time t ( 20 μs/div ) VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF Output voltage Δ VOUT (50mV/div) Output current IOUT (50mA/div) Time t ( 10 μs/div ) VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF

U F 6 U n i t : m m Weight: 7 mg (typ.)

S M 6 ( S O T - 2 6 ) ( S C - 7 4 ) U n i t : m m Weight: 15 mg (typ.)

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• Toshiba Corporation, and its subsidiaries and affiliates (collect ively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
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