TCR5RG42A

Toshiba Semiconductor

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic 2024-03-08 Rev.7.0

Manufacturer: Toshiba Semiconductor

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Rev.7.0 1 © 2021-2024 Toshiba Electronic Devices & Storage Corporation TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5RG series Ultra high Ripple rejection ratio, 500 mA CMOS Low Dropout Regulator in ultra small package 1. Description The TCR5RG series are CMOS general -purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage and ultra high Ripple rejection ratio. These voltage regulators are available in fixed output voltages between 0.9 V and 5.0 V and capable of driving up to 5 00 mA. They feature Overcurrent protection, Thermal shutdown and Auto- discharge. The TCR5RG series is offered in the ultra small plastic mold package WCSP4F (0.645 mm x 0.645 mm (Typ.); t 0.33 mm (max)) and has a high ripple rejection ratio of 100 dB (f = 1 kHz, 2.8 V output). As small ceramic input and output capacitors 1.0 μF can be used with the TCR5RG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. 2. Applications Power IC developed for portable applications 3. Features

High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V)
High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V)
High Ripple rejection ratio 67 dB (Typ.) @100 kHz (VOUT = 2.8 V)
High Ripple rejection ratio 59 dB (Typ.) @1 MHz at (VOUT = 2.8 V)
Low output noise voltage (VNO = 5 μVrms (Typ.) at 10 Hz ≤ f ≤ 100 kHz)
Low quiescent current (IB = 7 μA (Typ.) at IOUT = 0 mA)
Overcurrent protection
Thermal shutdown
Auto-discharge
Low Dropout voltage VDO = 150 mV (Typ.), VOUT = 2.8 V, IOUT = 500 mA
Wide range output voltage line up (VOUT = 0.9 to 5.0 V)
Pull down connection between CONTROL and GND
Ceramic capacitors can be used (CIN = 1.0 μF, COUT =1.0 μF) WCSP4F Weight: 0.26 mg (Typ.) Start of commercial production 2020-12

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 2 4. Absolute Maximum Ratings (Note) (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to VIN + 0.3 ≤ 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Output current IOUT 500 mA Power dissipation PD 800 (Note1) mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40 mm x 40 mm x 1.6 mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% 5. Pin Assignment (Top view) 6. Operating Ranges Note 2: Please refer to Dropout Voltage table (Page 6) and use it within Absolute Maximum Ratings Junction temperature and Operating Temperature Ranges. 1 2 A VIN VOUT B CONTROL GND Characteristics Symbol Rating Unit Input voltage VIN 1.8 to 5.5 (Note 2) V Control voltage VCT 0 to VIN V Output voltage VOUT 0.9 to 5.0 V Output current IOUT DC 500 mA Operating Temperature Topr -40 to 85 °C Output Capacitance COUT ≥ 1.0 μF ― Input Capacitance CIN ≥ 1.0 μF ― 1 2 A B

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 3 7. List of Products Number, Output voltage and Marking Please ask your local retailer about the devices with (*) or other output voltages. Top Marking (Top view) Example: TCR5RG28A (2.8 V output) Product No. Output voltage(V) Marking TCR5RG09A 0.9 A TCR5RG095A* 0.95 B TCR5RG10A 1.0 C TCR5RG105A* 1.05 D TCR5RG11A 1.1 E TCR5RG115A* 1.15 F TCR5RG12A 1.2 |N TCR5RG1225A 1.225 |A TCR5RG125A* 1.25 |B TCR5RG13A 1.3 H TCR5RG135A* 1.35 J TCR5RG14A 1.4 |C TCR5RG15A* 1.5 K TCR5RG16A* 1.6 |D TCR5RG17A 1.7 L TCR5RG175A* 1.75 M TCR5RG18A 1.8 N TCR5RG1825A* 1.825 |P TCR5RG185A 1.85 P TCR5RG19A* 1.9 R TCR5RG20A 2.0 S TCR5RG25A 2.5 T TCR5RG255A* 2.55 |L TCR5RG27A* 2.7 V TCR5RG28A 2.8 W TCR5RG285A 2.85 X TCR5RG29A 2.9 Y TCR5RG2925A* 2.925 |M TCR5RG295A* 2.95 |R TCR5RG30A 3.0 0 TCR5RG31A* 3.1 1 TCR5RG32A* 3.2 2 TCR5RG33A 3.3 3 TCR5RG34A* 3.4 |E TCR5RG35A* 3.5 4 TCR5RG36A 3.6 5 TCR5RG40A* 4.0 |F TCR5RG41A* 4.1 |S TCR5RG42A* 4.2 6 TCR5RG43A* 4.3 |H TCR5RG45A* 4.5 7 TCR5RG46A* 4.6 8 TCR5RG47A* 4.7 |J TCR5RG48A* 4.8 |K TCR5RG50A* 5.0 9 W

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 5 8. Electrical Characteristics (Unless otherwise specified, VIN = 2.0 V or VOUT + 0.5 V (whichever is greater), CIN = COUT = 1.0 μF) Characteristics Symbol Test Condition Tj = 25°C Tj = -40 to 85°C (Note 6) Unit Min Typ. Max Min Max Output voltage accuracy VOUT IOUT = 1 mA to 500 mA (Note 3) VOUT < 1.8 V ― ― ― -36 +36 mV Line regulation Reg･line IOUT = 1 mA (Note 3) ― 0.5 ― ― ― mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 500 mA ― 3 ― ― ― mV Quiescent current IB(ON) IOUT = 0 mA (Note 5) ― 7 ― ― 13 μA Stand-by current IB (OFF) VCT = 0 V ― 0.08 ― ― 0.2 μA Control pull down current ICT ― ― 0.08 ― ― 0.2 μA Dropout voltage (Note 7) VDO IOUT = 500 mA VOUT = 1.8 V ― 235 ― ― 290 mV VOUT = 2.8 V ― 150 ― ― 210 mV Output noise voltage VNO IOUT = 10 mA

10 Hz ≤ f ≤ 100 kHz (Note 4) ― 5 ― ― 15

μVrms IOUT = 250 mA Ripple rejection ratio R.R. IOUT = 10 mA, VIN = VOUT + 1 V VRipple = 200 mVp-p, (Note 4) f = 1 kHz ― 100 ― ― ― dB f = 10 kHz ― 93 ― ― ― dB f = 100 kHz ― 67 ― ― ― dB f = 1 MHz ― 59 ― ― ― dB Load transient response ⊿VOUT IOUT = 1 mA to 500 mA ― -40 ― ― ― mV IOUT = 500 mA to 1 mA ― +40 ― ― ― mV Output voltage slew rate VOUTSR ― ― 30 ― ― ― mV/μs Output current limit ICL ― ― 700 ― 600 850 mA Thermal shutdown threshold TSDH TJ rising ― 160 ― ― ― °C TSDL TJ falling ― 140 ― ― ― °C Control voltage (ON) VCT (ON) ― ― ― ― 0.9 VIN V Control voltage (OFF) VCT (OFF) ― ― ― ― 0 0.5 V Discharge on resistance RSD (Note4) ― 30 ― ― ― Ω Note 3: stable state with fixed IOUT condition ((VOUT + 0.5 V) or 2 V whichever is greater) ≤ VIN ≤ 5.5 V Note 4: VOUT = 2.8 V Note 5: except Control pull down current (ICT) Note 6: This parameter is warranted by design. Note 7: VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the nominal output voltage. VIN1 is the input voltage at which the output voltage becomes 97% of V OUT1 after gradually decreasing the input voltage.

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 6 Dropout voltage table ( CIN = 1.0 μF, COUT = 1.0 μF) Output voltages IOUT = 500 mA Unit Min Typ. Max (Note 8) 0.9 V ≤ VOUT ≤ 1.35 V ― (Note 9) (Note 9) mV

1.4 V ― 320

(Note 9) 460 (Note 9) mV

1.5 V ― 310 400 mV

1.6 V ― 260 350 mV

1.7 V ― 250 320 mV

1.75 V ― 240 300 mV

1.8 V ― 235 290 mV

1.825 V ― 235 285 mV

1.85 V ― 230 280 mV

1.9 V ― 225 270 mV

2.0 V ― 215 255 mV

2.5 V, 2.55 V ― 170 230 mV

2.7 V ― 160 215 mV

2.8 V, 2.85 V ― 150 210 mV 2.9 V, 2.925 V, 2.95 V ― 150 205 mV 3.0 V, 3.1 V ― 145 205 mV

3.2 V ― 140 195 mV

3.3 V, 3.4 V ― 135 190 mV 3.5 V, 3.6 V ― 130 185 mV 4.0 V, 4.1 V ― 115 175 mV 4.2 V, 4.3 V ― 115 170 mV

4.5 V ― 115 165 mV

4.6 V, 4.7 V, 4.8 V ― 110 165 mV

5.0 V ― 108 160 mV

Note 8: Tj = -40 to 85°C. This parameter is guaranteed by design Note 9: Operating Voltage of VIN should be over 1.8 V.

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 7 9. Application Note 9.1. Recommended Application Circuit The figure above shows the recommended configuration for using a Low Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used.) 9.2. Power Dissipation Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Ambient temperature Ta (°C) Power dissipation PD (mW) −40 120 200 400 600 800 1000 VOUT GND VIN VCONTROL 1 μF 1 μF

Output Capacitors Toshiba recommends using ceramic capacitors for these devices. However, because of the type of the capacitors, there might be greatly affected by thermal features and DC bias depending. Please secure an effective capacitance of 0.6 μF or more by considering application condition for selecting capacitors.
Bias current characteristics TCR5RG series has Bias current; IB(ON) characteristic that controlled depending on IOUT. When the output current required is very low, TCR5RG series operates with low IB(ON). In this state, Ripple rejection ratio characteristic and load transient response characteristic are inferior than normal characteristics. Regarding output current that switches IB(ON) state, TCR5RG series has hysteresis to control. When output current is increased, good Ripple rejection ratio characteristics and good load transient response characteristics are provided with IB(ON) becoming high. In the case of decreasing the IOUT, TCR5RG series keeps good characteristics until the IB(ON) switches to a low state.
Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VI N and GND pattern need to be large and make the wire impedance small as possible.
Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80%.
Over current Protection and Thermal shutdown function Over current protection and Thermal shutdown function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend s inserting failsafe system into the design.
High ripple rejection ratio and low output noise voltage characteristics TCR5RG series has low-pass filter which contributes high ripple rejection ratio and low output noise voltage. This low-pass filter turns on after VOUT becomes near the nominal VOUT. Therefore, before and when the low -pass filter is turned on, please be careful about the increase and decrease of VOUT such as CONTROL voltage from low to high and load transient response. It affects significantly especially when the voltage difference between VIN and VOUT is small.

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 9 10. Representative Typical Characteristics (Note) 10.1. Output Voltage vs. Output Current (VIN = 2.0 V or VOUT + 0.5 V (whichever is greater)) 1.15 1.16 1.17 1.18 1.19 1.2 1.21 1.22 1.23 1.24 1.25 0 100 200 300 400 500 Output Voltage (V) Output Current (mA) VOUT = 1.2 V 85°C 25°C -40°C 1.75 1.76 1.77 1.78 1.79 1.8 1.81 1.82 1.83 1.84 1.85 0 100 200 300 400 500 Output Voltage (V) Output Current (mA) VOUT = 1.8 V 85°C 25°C -40°C 2.75 2.76 2.77 2.78 2.79 2.8 2.81 2.82 2.83 2.84 2.85 0 100 200 300 400 500 Output Voltage (V) Output Current (mA) VOUT = 2.8 V 85°C 25°C -40°C

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 10 10.2. Dropout Voltage vs. Output Current 100 150 200 250 300 0 100 200 300 400 500 Dropout Voltage (mV) Output Current (mA) VOUT = 1.8 V 85°C 25°C -40°C 100 150 200 250 300 0 100 200 300 400 500 Dropout Voltage (mV) Output Current (mA) VOUT = 2.8 V 85°C 25°C -40°C 100 150 200 250 300 0 100 200 300 400 500 Dropout Voltage (mV) Output Current (mA) VOUT = 3.3 V 85°C 25°C -40°C 100 150 200 250 300 0 100 200 300 400 500 Dropout Voltage (mV) Output Current (mA) VOUT = 5.0 V 85°C 25°C -40°C

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 11 10.3. Quiescent Current vs. Input Voltage (IOUT = 0 mA) 2 2.5 3 3.5 4 4.5 5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 1.2 V 85°C 25°C -40°C 2 2.5 3 3.5 4 4.5 5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 1.8 V 85°C 25°C -40°C 3 3.5 4 4.5 5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 2.8 V 85°C 25°C -40°C

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 12 10.4. Quiescent Current vs. Output Current (VIN = 2.0 V or VOUT + 0.5 V (whichever is greater), IOUT = 0 A↔300 μA, Ta = 25°C) 100 150 200 250 300 0 100 200 300 Quiescent Current (μA) Output Current (μA) VOUT = 2.8 V 100 150 200 250 300 0 100 200 300 Quiescent Current (μA) Output Current (μA) VOUT = 1.8 V 100 150 200 250 300 0 100 200 300 Quiescent Current (μA) Output Current (μA) VOUT = 1.2 V IOUT falling IOUT falling IOUT falling IOUT rising IOUT rising IOUT rising

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 13 10.5. Output Current Limit (VIN = 2.0 V or VOUT + 0.5 V (whichever is greater), Ta = 25°C) 0.5 1.5 0 200 400 600 800 1000 Output Voltage (V) Output Current (mA) VOUT = 1.2 V 0.5 1.5 0 200 400 600 800 1000 Output Voltage (V) Output Current (mA) VOUT = 1.8 V 0 200 400 600 800 1000 Output Voltage (V) Output Current (mA) VOUT = 2.8 V

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 14 10.6. Ripple rejection Ratio vs. Frequency (CIN = none, COUT = 1.0 μF, VIN = 2.0 V or VOUT + 0.5 V (whichever is greater), VIN Ripple = 200 mVp-p, IOUT = 10 mA, Ta = 25°C) 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 0.9 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 1.8 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 2.8 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 5.0 V

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 15 10.7. Output noise Voltage (CIN = 1.0 μF, COUT = 1.0 μF, VIN = 2.0 V or VOUT + 0.5 V (whichever is greater), IOUT = 10 mA, Ta = 25°C) 0.001 0.01 0.1 10 100 1K 10K 100K 1M Noise Voltage Density (μV/√Hz) Frequency (Hz) VOUT = 2.8 V 0.001 0.01 0.1 10 100 1K 10K 100K 1M Noise Voltage Density (μV/√Hz) Frequency (Hz) VOUT = 0.9 V 0.001 0.01 0.1 10 100 1K 10K 100K 1M Noise Voltage Density (μV/√Hz) Frequency (Hz) VOUT = 1.8 V 0.001 0.01 0.1 10 100 1K 10K 100K 1M Noise Voltage Density (μV/√Hz) Frequency (Hz) VOUT = 5.0 V

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 16 10.8. tON / tOFF Response (CIN = 1.0 μF, VIN = 2.0 V or VOUT + 0.5 V (whichever is greater), VCONTROL = 0 V↔1.0 V, Ta = 25°C) ⚫ COUT = 1.0 μF, IOUT = 10 mA VOUT = 1.2 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 50 mA/div 50 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 50 mA/div 20 μs/div VOUT = 2.8 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 100 mA/div 100 μs/div VOUT: 2 V/div VCONTROL: 1 V/div IIN: 100 mA/div 20 μs/div

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 17 ⚫ COUT = 4.7 μF, IOUT = 10 mA VOUT: 2 V/div VCONTROL: 1 V/div IIN: 200 mA/div 50 μs/div VOUT = 1.2 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 200 mA/div 100 μs/div VOUT = 2.8 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 200 mA/div 100 μs/div VOUT: 2 V/div VCONTROL: 1 V/div IIN: 200 mA/div 20 μs/div

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 18 ⚫ COUT = 1.0 μF, IOUT = 500 mA VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 50 μs/div VOUT = 1.2 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 20 μs/div VOUT = 2.8 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 100 μs/div VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 20 μs/div

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 19 ⚫ COUT = 4.7 μF, IOUT = 500 mA VOUT: 2 V/div VCONTROL: 1V/ div IIN: 500 mA/div 50 μs/div VOUT = 1.2 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 20 μs/div VOUT = 2.8 V VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 100 μs/div VOUT: 2 V/div VCONTROL: 1 V/div IIN: 500 mA/div 20 μs/div

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 20 10.9. Load Transient Response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. IOUT = 1 mA ↔ 500 mA IOUT: 500 mA/div 50 μs/div VOUT: 50m V/div IOUT = 0 mA ↔ 100 mA IOUT: 100 mA/div 50 μs/div VOUT: 200 mV/div

Rev.7.0 © 2021-2024 Toshiba Electronic Devices & Storage Corporation 22 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.

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Product Information

TCR5RG42A specifications and overview.

Summary

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic 2024-03-08 Rev.7.0

Description

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic 2024-03-08 Rev.7.0

Source title TCR5RG42A Datasheet(PDF) - Toshiba Semiconductor

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