TCR4DG TOSHIBA | Alldatasheet
Document overview
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Technical content
Features
- Low Drop-Out voltage VDO = 193 mV (typ.) at 3.3 V-output, IOUT = 420 mA
- Low output noise voltage VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz
- Fast load transient response (⊿VOUT = ±115 mV (typ.) at IOUT = 1 ⇔ 420 mA, COUT =1.0 μF )
- High ripple rejection ( R.R = 70 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f = 1 kHz )
- Over-current protection
- O ver-temperature protection
- Inrush current protection circuit
- Auto-discharge function
- Pull down connection between CONTROL and GND
- Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF )
- Ultra small package WCSP4E (0.645 mm x 0.645 mm ; t 0.43 mm (max)) WCSP4E Weight: 0.34 mg ( typ.) Start of commercial production 2017-04
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output current IOUT 420 mA Power dissipation PD 800 (Note1) mW Operation temperature range Topr -40 to 85 °C Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Board material: Glass epoxy(FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 Pin Assignment (Top view) 1 2 A VIN VOUT B CONTROL GND 1 2 A B
List of Products Number, Output voltage and Marking Note: Please ask your local retailer about the devices with other output voltages. Top Marking (top view) Example: TCR4DG10 (1.0 V output) Product No. Output voltage (V)(typ.) Marking Product No. Output voltage (V)(typ.) Marking TCR4DG10 1.0 A TCR4DG25 2.5 T TCR4DG105 1.05 B TCR4DG27 2.7 U TCR4DG11 1.1 C TCR4DG275 2.75 V TCR4DG115 1.15 D TCR4DG28 2.8 W TCR4DG12 1.2 E TCR4DG285 2.85 X TCR4DG125 1.25 F TCR4DG29 2.9 Y TCR4DG13 1.3 H TCR4DG30 3.0 0 TCR4DG135 1.35 J TCR4DG31 3.1 1 TCR4DG15 1.5 K TCR4DG32 3.2 2 TCR4DG175 1.75 L TCR4DG325 3.25 3 TCR4DG18 1.8 M TCR4DG33 3.3 4 TCR4DG185 1.85 N TCR4DG35 3.5 5 TCR4DG19 1.9 P TCR4DG36 3.6 6 TCR4DG23 2.3 R TCR4DG42 4.2 7 TCR4DG245 2.45 S TCR4DG45 4.5 8 A VIN CONTROL VOUT GND
Electrical Characteristics
(Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage accuracy V OUT I OUT = 50 mA (Note 2) VOUT < 1.8 V - 18 ― +18 mV Input voltage VIN I OUT = 1 mA (Note 3) VOUT + VDO ― 5.5 V Line regulation Reg・line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 mV Load regulation Reg・load 1 mA ≤ I OUT ≤ 420 mA ― 6 35 mV Quiescent current IB IOUT = 0 mA VOUT = 1.0 V ― 65 ― μA VOUT = 1.8 V ― 65 ― VOUT = 2.5 V ― 68 ― VOUT = 4.5 V ― 78 125 Stand-by current IB (OFF) V CT = 0 V ― 0.1 1 μA Drop-out voltage VDO I OUT = 420 mA (Note 4) ― 193 2 63 mV Temperature coefficient TCVO - 40°C ≤ T opr ≤ 85°C ― 75 ― ppm/°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA,
10 Hz ≤ f ≤ 100 kHz, Ta = 25°C (Note 5) ― 38 ― μVrms
Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C (Note 5) ― 70 ― dB Load transient response ⊿VOUT I OUT = 1 ⇔ 420 mA, COUT = 1.0 μF ― ± 115 ― mV Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 V Note 2: Stable state with fixed IOUT condition. Note 3: Please refer to Dropout Voltage table (Page 4), and use it within the limits of absolute maximum rating Topr and Tj. Note 4: The 3.3 V output product. Dropout voltage is the voltage difference between the VIN and VOUT at which VOUT drops to 2% below its nominal value. Note 5: The 2.5 V output product. Drop-out voltage (IOUT = 420 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Output voltages Symbol Min Typ. Max Unit 1.0 V, 1.05 V VDO ― 767 991 mV 1.1 V, 1.15V ― 711 851 1.2 V, 1.25V ― 627 781
1.3 V ― 571 711
1.35 V ― 515 683
1.4 V ― 487 669
1.5 V ≤ V OUT < 1.8 V ― 431 571 1.8 V ≤ V OUT < 2.1 V ― 319 473 2.1 V ≤ V OUT < 2.5 V ― 277 403 2.5 V ≤ V OUT < 2.8 V ― 235 347 2.8 V ≤ V OUT < 3.2 V ― 221 291 3.2 V ≤ V OUT < 3.6 V ― 193 263 3.6 V ≤ V OUT ≤ 4.5 V ― 151 221
- Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at V OUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Board-mounted power dissipation ratings for TCR4DG series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40mm x 40mm (both sides of board), t= 1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF Ambient temperature Ta ( °C) Power dissipation PD (mW) -40 VOUT GND VIN 40 120 80 CONTROL 200 400 600 1.0 μF 800 1.0 μF 1000
- Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω.
- Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible.
- Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent.
- Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design.
Representative Typical Characteristics Quiescent Current vs. Input Voltage Quiescent Current vs. Ambient Temperature 100 150 -50 0 50 100 100 150 -50 0 50 100 100 150 200 250 300 350 400 0 1 2 3 4 5 100 150 200 250 300 350 400 0 1 2 3 4 5 100 150 200 250 300 350 400 0 1 2 3 4 5 100 150 200 0 1 2 3 4 5 VOUT=1.0V VIN = 2.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA Quiescent current I B ( μA) Ambient temperature Ta ( °C) Quiescent current I B ( μA) VOUT=1.0V VOUT=1.8V Input voltage V IN (V) Quiescent current I B ( μA) Input voltage V IN (V) CIN = 1 μF, COUT = 1 μF IOUT = 0 mA CIN = 1 μF, COUT = 1 μF IOUT = 0 mA Input voltage V IN (V) Input voltage V IN (V) Quiescent current I B ( μA) Quiescent current I B ( μA) VOUT=3.0V Ambient temperature Ta ( °C) VIN = 4.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA CIN = 1 μF, COUT = 1 μF IOUT = 0 mA CIN = 1 μF, COUT = 1 μF IOUT = 0 mA VOUT=2.5V VOUT=3.0V Quiescent current I B ( μA)
Ripple Rejection Ratio vs. Frequency Output Voltage vs. Output Current 100 10 100 1000 10000 100000 100 10 100 1000 10000 100000 100 10 100 1000 10000 100000 100 10 100 1000 10000 100000 VIN = 3.5 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C VOUT=3.0V VOUT=2.5V Ripple rejection (dB) Ripple rejection (dB) VIN = 4.0 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C VIN = 2.0 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C VIN = 2.8 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C VOUT=1.0V VOUT=1.8V Ripple rejection (dB) Frequency f ( Hz) Ripple rejection (dB) Frequency f ( Hz) Pulse width = 1 ms Pulse width = 1 ms Frequency f ( Hz) Frequency f ( Hz) VOUT=1.0V Output voltage V OUT (V) Output current I OUT ( mA) VOUT=1.8V Output current I OUT ( mA) Output voltage V OUT (V) 5.5V VIN=2.0V 5.5V VIN=2.8V
Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 5.5V VIN=3.5V Output current I OUT ( mA) VIN=4.0V 5.5V Output current I OUT ( mA) Pulse width = 1 ms Pulse width = 1 ms VOUT=2.5V Output voltage V OUT (V) VOUT=3.0V Output voltage V OUT (V)
WCSP4E Unit: mm Weight: 0.34 mg ( typ.)
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