TCR3RM11A

TCR3RM TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V)
• High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V)
• High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V)
• High Ripple rejection ratio 68 dB (Typ.) @1 MHz (VOUT = 2.8 V)
• Low output noise voltage (VNO = 5 μVrms (Typ.) at 10 Hz ≤ f ≤ 100 kHz)
• Low quiescent current (IB = 7 μA (Typ.) at IOUT = 0 mA)
• Overcurrent protection
• Thermal shutdown
• Auto-discharge
• Low Dropout voltage VDO = 130 mV (Typ.), VOUT = 2.8 V, IOUT = 300 mA
• Wide range output voltage line up (VOUT = 0.9 to 4.5 V)
• Pull down connection between CONTROL and GND
• Ceramic capacitors can be used (CIN = 1 μF, COUT =1 μF) DFN4C/DFN4F Start of commercial production 2020-09

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 2 Absolute Maximum Ratings (Note) (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to VIN + 0.3 ≤ 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Output current IOUT 300 mA Power dissipation PD 420 (Note1) mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Pin Assignment (Top view) Operating Ranges Note 2: Please refer to Dropout Voltage table(Page 6) and use it within Absolute Maximum Ratings Junction temperature and Operating Temperature Ranges. Characteristics Symbol Ranges Unit Input voltage VIN 1.8 to 5.5 (Note 2 ) V Control voltage VCT 0 to VIN V Output voltage VOUT 0.9 to 4.5 V Output current IOUT DC 300 mA Operating Temperature Topr -40 to 85 °C Output Capacitance COUT ≥ 1.0 μF ― Input Capacitance CIN ≥ 1.0 μF ― VOUT CONTROL GND *Center electrode should be connected to GND or Open VIN

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 3 List of Products Number, Output voltage and Marking Please ask your local retailer about the devices with (*) or other output voltages. Top Marking (Top view) Example: TCR3RM28A (2.8 V output) Product No. Output voltage(V) Marking TCR3RM09A 0.9 0J9 TCR3RM095A* 0.95 0JB TCR3RM10A 1.0 1J0 TCR3RM105A* 1.05 1JC TCR3RM11A* 1.1 1J1 TCR3RM115A* 1.15 1JD TCR3RM12A 1.2 1J2 TCR3RM13A* 1.3 1J3 TCR3RM15A* 1.5 1J5 TCR3RM16A* 1.6 1J6 TCR3RM17A* 1.7 1J7 TCR3RM18A 1.8 1J8 TCR3RM1825A* 1.825 1JG TCR3RM185A 1.85 1JH TCR3RM19A* 1.9 1J9 TCR3RM20A* 2.0 2J0 TCR3RM22A 2.2 2J2 TCR3RM25A 2.5 2J5 TCR3RM26A* 2.6 2J6 TCR3RM27A* 2.7 2J7 TCR3RM28A 2.8 2J8 TCR3RM285A 2.85 2JJ TCR3RM29A 2.9 2J9 TCR3RM30A 3.0 3J0 TCR3RM31A* 3.1 3J1 TCR3RM32A* 3.2 3J2 TCR3RM33A 3.3 3J3 TCR3RM35A* 3.5 3J5 TCR3RM36A* 3.6 3J6 TCR3RM40A* 4.0 4J0 TCR3RM41A 4.1 4J1 TCR3RM42A* 4.2 4J2 TCR3RM43A* 4.3 4J3 TCR3RM45A* 4.5 4J5 2J8 INDEX Lot code

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 4 Block Diagram

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 5

Electrical Characteristics

(Unless otherwise specified, VIN = VOUT + 1 V (VOUT ≥ 1 V), VIN = 2 V (VOUT ≤ 1 V), CIN = COUT = 1 μF) Characteristics Symbol Test Condition Tj = 25°C Tj = -40 to 85°C (Note 6) Unit Min Typ. Max Min Max Output voltage accuracy VOUT IOUT = 1 to 300 mA VIN = VOUT+ 1 V to 5.5 V (Note 3) VOUT < 1.8 V ― ― ― -36 +36 mV Line regulation Reg･line VOUT + 1 V ≤ VIN ≤ 5.5 V Load regulation Reg･load 1 mA ≤ IOUT ≤ 300 mA ― 12 ― ― ― mV Quiescent current IB(ON) IOUT = 0 mA (Note 5) ― 7 ― ― 12 μA Stand-by current IB (OFF) VCT = 0 V ― 0.1 ― ― 1.0 μA Control pull down current ICT ― ― 0.1 ― ― 0.2 μA Drop-out voltage (Note 7) VDO IOUT = 300 mA VOUT = 1.8 V ― 180 ― ― 220 mV VOUT = 2.8 V ― 130 ― ― 150 mV VOUT = 4.5 V ― 98 ― ― 125 mV Output noise voltage VNO IOUT = 10 mA

10 Hz ≤ f ≤ 100 kHz, Ta = 25°C (Note 4) ― 5 ― ― ― μVrms

Ripple rejection ratio R.R. IOUT = 10 mA, VRipple = 200 mVp-p, Ta = 25°C (Note 4) f = 1 kHz ― 100 ― ― ― dB f = 10 kHz ― 93 ― ― ― dB f = 100 kHz ― 68 ― ― ― dB f = 1 MHz ― 68 ― ― ― dB Load transient response ⊿VOUT IOUT = 1 mA → 300 mA, tr = 1 μs ― -30 ― ― ― mV IOUT = 300 mA → 1 mA, tf = 1 μs ― +30 ― ― ― mV Output voltage slew rate VOUTSR (Note 4) ― 4 ― ― ― mV/μs Output current limit ICL ― ― ― ― 400 700 mA Thermal shutdown threshold TSDH Tj rising ― 160 ― ― ― °C TSDL Tj falling ― 140 ― ― ― °C Control voltage (HIGH) VCTH Control pin input voltage “HIGH” ― ― ― 1.0 VIN V Control voltage (LOW) VCTL Control pin input voltage “LOW” ― ― ― 0 0.4 V Discharge on resistance RSD (Note 4) ― 20 ― ― ― Ω Note 3: stable state with fixed IOUT condition Note 4: VOUT = 2.8 V Note 5: except Control pull down current (ICT) Note 6: This parameter is warranted by design. Note 7: VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the nominal output voltage. VIN1 is the input voltage at whi ch the output voltage becomes 97 % of V OUT1 after gradually decreasing the input voltage.

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 6 Dropout voltage table ( CIN = 1.0 μF, COUT = 1.0 μF) Output voltages IOUT = 300 mA Unit Min Typ. Max (Note 8) 0.9 V ≤ VOUT ≤ 1.5 V ― (Note 9) (Note 9) mV

1.5 V ― 225

(Note 9) 280 (Note 9) mV

1.6 V ― 210 255 mV

1.7 V ― 190 235 mV

1.8 V, 1.825 V, 1.85 V ― 180 220 mV

1.9 V ― 175 210 mV

2.0 V ― 170 200 mV

2.2 V ― 160 185 mV

2.5 V, 2.6 V ― 140 165 mV

2.7 V ― 130 155 mV

2.8 V ― 130 150 mV

2.85 V, 2.9 V ― 125 150 mV 3.0 V, 3.1 V, 3.2 V ― 120 145 mV

3.3 V ― 115 140 mV

3.5 V, 3.6 V ― 110 140 mV

4.0 V ― 100 138 mV

4.1 V ― 100 135 mV

4.2 V, 4.3 V ― 100 133 mV

4.5 V ― 98 125 mV

Note 8: Tj = -40 to 85 °C. This parameter is guaranteed by design Note 9: Operating Voltage of VIN should be over 1.8 V.

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 7 Application Note Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used.) Power Dissipation Board-mounted power dissipation ratings for TCR3RM series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40mm x 40mm (both sides of board), t= 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF Ambient temperature Ta ( °C) Power dissipation PD (mW) −40 120 100 200 300 400 500 VOUT GND VIN VCONTROL 1.0 μF 1.0 μF

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 8 Attention in Use

• Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends ceramic capacitor.
• Bias current characteristics TCR3RM series has Bias current; IB(ON) characteristic that controlled depending on IOUT. When the output current required is very low, TCR3RM series operates with low IB(ON). In this state, PSRR characteristic and load transient response characteristic are inferior than normal characteristics. Regarding output current that switches IB(ON) state, TCR3RM series has hysteresis to control. When output current is in creased, good PSRR characteristics and good load transient r esponse characteristics are provided with I B(ON) becoming high. In the case of decreasing the I OUT, TCR3RM series keeps good characteristics until the IB(ON) switches to a low state.
• Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible.
• Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80%.
• Over current Protection and Thermal shutdown function Over current protection and Thermal shutdown function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend s inserting failsafe system into the design.
• High ripple rejection ratio and low output noise voltage characteristics TCR3RM series has low-pass filter which contributes high ripple rejection ratio and low output noise voltage. This low-pass filter turns on after VOUT becomes near the nominal VOUT. Therefore, before and when the low-pass filter is turned on, please be careful about the increase and decrease of VOUT such as CONTROL voltage from low to high and load transient response. It affects significantly especially when the voltage difference between VIN and VOUT is small.

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 9 Representative Typical Characteristics (Note) Output Voltage vs. Output Current (VIN = VOUT + 1 V) Dropout Voltage vs. Output Current 2.75 2.77 2.79 2.81 2.83 2.85 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 2.8 V 85°C 25°C -40°C 100 200 300 400 500 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 1.8 V 85°C 25°C -40°C 100 150 200 250 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 2.8 V 85°C 25°C -40°C 100 150 200 250 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 3.3 V 85°C 25°C -40°C 100 150 200 250 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 4.5 V 85°C 25°C -40°C 1.15 1.16 1.17 1.18 1.19 1.2 1.21 1.22 1.23 1.24 1.25 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 1.2 V 85°C 25°C -40°C

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 10 Quiescent Current vs. Input Voltage (IOUT = 0mA) Quiescent Current (μA) Input Voltage (V) VOUT = 1.2 V 85°C 25°C -40°C 2.5 3.5 4.5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 2.8 V 85°C 25°C -40°C Quiescent Current (μA) Input Voltage (V) VOUT = 1.8 V 85°C 25°C -40°C

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 11 Quiescent Current vs. Output Current (VIN = VOUT + 1 V, IOUT = 0 ↔ 300 μA, Ta=25°C) Output Current Limit (VIN = VOUT + 1 V, Ta = 25°C) 100 150 200 250 300 0 100 200 300 Quiescent Current (μA) Output Current (μA) VOUT = 1.2 V IOUT rising IOUT falling 100 150 200 250 300 0 100 200 300 Quiescent Current (μA) Output Current (μA) VOUT = 1.8 V 100 150 200 250 300 0 100 200 300 Quiescent Current (μA) Output Current (μA) VOUT = 2.8 V IOUT falling IOUT rising IOUT rising IOUT falling 0.5 1.5 0 200 400 600 800 1000 Output Voltage (V) Output Current (mA) VOUT = 1.2 V 0 200 400 600 800 1000 Output Voltage (V) Output Current (mA) VOUT = 2.8 V

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 12 Ripple rejection Ratio vs. Frequency (CIN = none, COUT = 1 μF, VIN Ripple = 200 mVp-p, IOUT = 10 mA, Ta = 25°C) 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 0.9 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 1.2 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 1.8 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 2.8 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 3.3 V 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 4.5 V VIN = 2.5 V VIN = 2.5 V VIN = 2.8 V VIN = 3.8 V VIN = 4.3 V VIN = 5.5 V

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 13 tON / tOFF Response (CIN = 1 μF, VIN = VOUT + 1 V, VCONTROL = 0 V ↔ 1 V, Ta = 25°C) ⚫ COUT = 1 μF, IOUT = 10 mA VOUT = 1.2 V VOUT = 2.8 V VCONTROL: 1 V/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 10 mA/div VOUT: 2 V/div IIN: 10 mA/div 200 μs/div 200 μs/div 20 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 10 mA/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 10 mA/div 20 μs/div

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 14 ⚫ COUT = 1 μF, IOUT = 300 mA VCONTROL: 1 V/div VCONTROL: 1 V/div IIN: 500 mA/div IIN: 500 mA/div VOUT: 2 V/div VOUT: 2 V/div 200 μs/div 200 μs/div VOUT = 1.2 V VOUT = 2.8 V 20 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 500 mA/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 20 μs/div

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 15 ⚫ COUT = 10 μF, IOUT = 10 mA VOUT = 1.2 V VOUT = 2.8 V VCONTROL: 1 V/div VOUT: 2 V/div IIN: 50 mA/div 200 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 50 mA/div 100 μs/div 200 μs/div 100 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 50 mA/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 50 mA/div

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 16 ⚫ COUT = 10 μF, IOUT = 300 mA VOUT = 1.2 V VOUT = 2.8 V VCONTROL: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 200 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 200 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 μs/div VCONTROL: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 μs/div

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 17 Load Transient Response (CIN = 1 μF, COUT = 1 μF, VIN = 3.8 V, VOUT = 2.8 V, tr = 1μs, tf = 1μs, Ta = 25°C) IOUT = 1 mA ↔ 300 mA 50 μs/div VOUT: 50 mV/div IOUT: 200 mA/div IOUT = 0 mA ↔ 100 mA 50 μs/div VOUT: 100mV/div IOUT: 100 mA/div Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 18

Package Information

DFN4C Unit : mm Weight : 0.93 mg ( typ.) Figure 11.1 Package Dimensions

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 19 DFN4F Unit : mm Weight : 0.93 mg ( typ.) Figure 11.2 Package Dimensions

Rve.8.0 © 2020-2024 Toshiba Electronic Devices & Storage Corporation 20 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.

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