TCR3LM TOSHIBA | Alldatasheet
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Rev.8.0 1 © 2023-2024 Toshiba Electronic Devices & Storage Corporation TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3LM series Low quiescent current, 300 mA CMOS Low Dropout Regulator in ultra small package 1. Description The TCR3LM series are CMOS general -purpose single-output voltage regulators with an on/off control input, featuring low quiescent current. These voltage regulators are available in fixed output voltages between 0.8 V and 5.0 V and capable of driving up to 300 mA. They feature Overcurrent protection, Thermal shutdown and Auto- discharge. The TCR3LM series is offered in the ultra small plastic mold package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)) and has low quiescent current ( IB = 1.2 μA (typ.) at I OUT = 0 mA) . As small ceramic input and output capacitors 0.47 μF can be used with the TCR3LM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. 2. Applications Power IC developed for portable applications 3. Features
- Low quiescent current (IB(ON) = 1.2 μA (typ.) at IOUT = 0 mA)
- High Ripple rejection ratio (74 dB (typ.) at 100 Hz, 0.8 V-output)
- Fast load transient response (-70/+35 mV at 2.8 V-output, IOUT = 1 mA ⇔ 100 mA)
- Low Dropout voltage (VDO = 213 mV (typ.) at 2.8 V-output, IOUT = 200 mA)
- Wide range output voltage line up (VOUT = 0.8 to 5.0 V)
- Overcurrent protection
- Thermal shutdown
- Auto-discharge
- Inrush current protection circuit
- Pull down connection between CONTROL and GND
- Ceramic capacitors can be used (CIN = 0.47 μF, COUT = 0.47 μF) DFN4D. Weight: 1.1 mg (typ.) Start of commercial production 2023-03
Rev.8.0 2 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 4. Absolute Maximum Ratings (Note) (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to VIN + 0.3 ≤ 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 420 (Note 1) mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40 mm x 40 mm x 1.6 mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 pcs 5. Pin Assignment (top view) 6. Operating Ranges Note 2: Please refer to Dropout Voltage Characteristics and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Characteristics Symbol Rating Unit Input voltage VIN 1.4 to 5.5 (Note 2 ) V Control voltage VCT 0 to VIN V Output voltage VOUT 0.8 to 5.0 V Output current IOUT DC 300 mA Operation Temperature Topr -40 to 85 °C Output Capacitance COUT ≥ 0.47 μF Input Capacitance CIN ≥ 0.47 μF VOUT CONTROL GND *Center electrode should be connected to GND or Open VIN
Rev.8.0 3 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 7. List of Products Number, Output voltage and Marking * Please contact your local Toshiba representative if you are interested in products with * sign. Top Marking (top view) Example: TCR3LM25A (2.5 V output) Product No. Output voltage (V) Marking TCR3LM08A 0.8 0K8 TCR3LM085A* 0.85 0KC TCR3LM09A* 0.9 0K9 TCR3LM095A 0.95 0KD TCR3LM10A* 1.0 1K0 TCR3LM105A* 1.05 1KE TCR3LM11A* 1.1 1K1 TCR3LM115A* 1.15 1KF TCR3LM12A 1.2 1K2 TCR3LM13A* 1.3 1K3 TCR3LM15A 1.5 1K5 TCR3LM16A* 1.6 1K6 TCR3LM17A 1.7 1K7 TCR3LM18A 1.8 1K8 TCR3LM185A* 1.85 1KH TCR3LM19A* 1.9 1K9 TCR3LM195A 1.95 1KK TCR3LM20A* 2.0 2K0 TCR3LM25A 2.5 2K5 TCR3LM26A* 2.6 2K6 TCR3LM27A* 2.7 2K7 TCR3LM28A 2.8 2K8 TCR3LM285A* 2.85 2KJ TCR3LM29A* 2.9 2K9 TCR3LM30A* 3.0 3K0 TCR3LM31A* 3.1 3K1 TCR3LM32A* 3.2 3K2 TCR3LM33A 3.3 3K3 TCR3LM35A* 3.5 3K5 TCR3LM36A* 3.6 3K6 TCR3LM42A* 4.2 4K2 TCR3LM45A* 4.5 4K5 TCR3LM50A 5.0 5K0 2K5 INDEX Lot code
Rev.8.0 4 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 8. Block Diagram VIN VOUT CONTROL GND Thermal Shut Down Current Limit Control Logic Pull Down
Rev.8.0 5 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 9. Electrical Characteristics (Unless otherwise specified, VIN = 2.5 V or VOUT + 1.0 V (whichever is greater), VIN = 5.5 V (VOUT = 5.0 V), CIN = COUT = 0.47 μF) Characteristics Symbol Test Condition Tj = 25°C Tj = -40 to 85°C (Note 8) Unit Min Typ. Max Min Max Output voltage accuracy VOUT IOUT = 50 mA VIN = VOUT + 1 V (Note 3) VOUT < 1.8 V -18 ― +18 ― ― mV Line regulation Reg・line VOUT + 1 V ≤ VIN ≤ 5.5 V IOUT = 1 mA ― 5 ― ― 12 mV Load regulation Reg・load 1 mA ≤ IOUT ≤ 200 mA (Note 4) ― 13 ― ― 28 mV Quiescent current IB(ON) IOUT = 0 mA, VIN = 5.5 V (Note 6) ― 1.2 ― ― 2.2 μA Stand-by current IB (OFF) VCT = 0 V, VIN = 5.5 V (Note 6) ― 0.1 ― ― 0.2 μA Control pull down current ICT ― ― 0.1 ― ― 0.2 μA Drop-out voltage (Note 9) VDO IOUT = 200 mA VOUT = 1.8 V ― 344 ― ― 445 mV VOUT = 2.8 V ― 213 ― ― 290 mV VOUT = 3.3 V ― 177 ― ― 251 mV VOUT = 5.0 V ― 137 ― ― 205 mV Output noise voltage VNO VIN = VOUT + 1 V IOUT = 10 mA
10 Hz ≤ f ≤ 100 kHz, Ta = 25°C
(Note 4) ― 53 ― ― ― μVrms Ripple rejection ratio R.R. VIN = VOUT + 1 V IOUT = 10 mA, VRipple = 200 mVp-p, Ta = 25°C (Note 4) f = 100 Hz ― 74 ― ― ― dB f = 1 kHz ― 66 ― ― ― f = 10 kHz ― 50 ― ― ― f = 100 kHz ― 43 ― ― ― Load transient response ⊿VOUT IOUT = 1 mA 100 mA (Note 5) ― -70 ― ― ― mV IOUT = 100 mA 1 mA (Note 5) ― +35 ― ― ― Output current limit ICL VOUT = VOUT(NOM)*90% (Note 7) ― ― ― 300 450 mA Thermal shutdown threshold TSDH TJ rising ― 160 ― ― ― °C TSDL TJ falling ― 140 ― ― ― °C Control voltage (HIGH) VCTH Control pin input voltage “HIGH” ― ― ― 0.9 5.0 V Control voltage (LOW) VCTL Control pin input voltage “LOW” ― ― ― ― 0.4 V Discharge on resistance RSD (Note 5) ― 25 ― ― ― Ω Note 3: stable state with fixed IOUT condition Note 4: VOUT = 0.8 V Note 5: VOUT = 2.8 V Note 6: except Control pull down current (ICT) Note 7: Pulse measurement Note 8: This parameter is warranted by design. Note 9: VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the output voltage when VIN = VOUT + 1.0 V. VIN1 is the input voltage at which the output voltage becomes 97% of VOUT1 after gradually decreasing the input voltage.
Rev.8.0 6 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 10. Dropout voltage table (CIN = 0.47 μF, COUT = 0.47 μF) Output voltages IOUT = 200 mA Unit Min Typ. Max (Note 10) 0.8 V ≤ VOUT < 1.5 V ― (Note 11) (Note 11) mV
1.5 V ― 500
(Note 11) 615 (Note 11) mV
1.6 V ― 441 550 mV
1.7 V ― 382 485 mV
1.8 V, 1.85 V ― 344 445 mV 1.9 V, 1.95 V ― 331 425 mV
2.0 V ― 318 410 mV
2.5 V ― 252 325 mV
2.6 V ― 239 310 mV
2.7 V ― 226 300 mV
2.8 V, 2.85 V ― 213 290 mV
2.9 V ― 202 282 mV
3.0 V, 3.1 V ― 192 274 mV
3.2 V ― 182 259 mV
3.3 V ― 177 251 mV
3.5 V, 3.6 V ― 173 244 mV
4.2 V ― 156 230 mV
4.5 V ― 149 221 mV
5.0 V ― 137 205 mV
Note 10: Tj = -40 to 85°C. This parameter is guaranteed by design Note 11: Operating Voltage of VIN should be over 2.5 V.
Rev.8.0 7 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 11. Application Note 11.1. Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at V OUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 11.2. Power Dissipation Board-mounted power dissipation ratings for TCR3LM series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t= 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 pcs CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF GND VOUT CONTROL VIN 0.47 μF 0.47 μF 100 200 300 400 500 -40 0 40 80 120 Power dissipation PD (mW) Ambient temperature Ta (°C)
Rev.8.0 8 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 11.3. Attention in Use Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend ceramic capacitor. TCR3LM series has Bias current; IB(ON) characteristic that controlled depending on IOUT. When the output current required is very low, TCR3LM series operates with low I B(ON). In this state, load transient response characteristic are inferior than normal characteristics. Regarding output current that switches IB(ON) state, TCR3LM series has hysteresis to control. When output current is increased, good load transient response characteristics are provided with I B(ON) becoming high. In the case of decreasing the IOUT, TCR3LM series keeps good characteristics until the IB(ON) switches to a low state. Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 %. Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design.
Rev.8.0 9 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12. Representation Typical Characteristics (Note) 12.1. Output Voltage vs. Output Current 0.74 0.76 0.78 0.8 0.82 0.84 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 0.8 V 85°C 25°C -40°C 2.65 2.7 2.75 2.8 2.85 2.9 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 2.8 V 85°C 25°C -40°C 4.7 4.8 4.9 5.1 5.2 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 10 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.2. Output Voltage vs. Input Voltage (IOUT = 1 mA, Ta = 25°C) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 0.2 0.4 0.6 0.8 0 1 2 3 4 5 6 Output Voltage (V) Input Voltage (V) VOUT = 0.8 V 0.5 1.5 2.5 0 1 2 3 4 5 6 Output Voltage (V) Input Voltage (V) VOUT = 2.8 V 0 1 2 3 4 5 6 Output Voltage (V) Input Voltage (V) VOUT = 5.0 V
Rev.8.0 11 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.3. Dropout Voltage vs. Output Current 250 500 750 1000 1250 1500 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 0.8 V 85°C 25°C -40°C 100 150 200 250 300 350 400 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 2.8 V 85°C 25°C -40°C 100 150 200 250 300 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 12 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.4. Quiescent Current vs. Input Voltage (IOUT = 0 mA) 0.5 1.5 Quiescent Current (μA) Input Voltage (V) VOUT = 0.8 V 85°C 25°C -40°C 0 0.5 1.5 3 3.5 4 4.5 5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 2.8 V 85°C 25°C -40°C 0.5 1.5 Quiescent Current (μA) Input Voltage (V) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 13 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.5. Quiescent Current vs. Output Current 0.1 100 1000 0 50 100 150 200 Quiescent Current (μA) Output Current (μA) VOUT = 0.8 V Output Current Rising Output Current Falling 0.1 100 1000 0 50 100 150 200 Quiescent Current (μA) Output Current (μA) VOUT = 2.8 V Output Current Rising Output Current Falling 0.1 100 1000 0 50 100 150 200 Quiescent Current (μA) Output Current (μA) VOUT = 5.0 V Output Current Rising Output Current Falling Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 14 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.6. Output Current Limit 0.2 0.4 0.6 0.8 0 200 400 600 Output Voltage (V) Output Current (mA) VOUT = 0.8 V 0.5 1.5 2.5 0 200 400 600 Output Voltage (V) Output Current (mA) VOUT = 2.8 V 0 200 400 600 Output Voltage (V) Output Current (mA) VOUT = 5.0 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 15 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.7. Ripple rejection Ratio vs. Frequency VIN Ripple = 200 mVp-p, IOUT = 10 mA, Ta = 25°C) 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 0.8 V 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 2.8 V 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 5.0 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 16 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.8. Load Transient Response tr = 1.0 μs, tf = 1.0 μs, Ta = 25°C) VOUT = 0.8 V VOUT = 2.8 V VOUT = 5.0 V VOUT: 100 mV/div IOUT: 100 mA/div IOUT = 1 mA ⇔ 100 mA 50 µs/div VOUT: 100 mV/div IOUT: 10 mA/div IOUT = 0 mA ⇔ 10 mA 50 µs/div VOUT: 100 mV/div IOUT: 100 mA/div IOUT = 1 mA ⇔ 100 mA 50 µs/div VOUT: 100 mV/div IOUT: 10 mA/div IOUT = 0 mA ⇔ 10 mA 50 µs/div VOUT: 100 mV/div IOUT: 100 mA/div IOUT = 1 mA ⇔ 100 mA 50 µs/div VOUT: 100 mV/div IOUT: 10 mA/div IOUT = 0 mA ⇔ 10 mA 50 µs/div Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
Rev.8.0 17 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12.9. tON/tOFF Response IOUT = 0 mA, VCT = 0 V ⇔ 1.0 V, Ta = 25°C) VOUT = 0.8 V VOUT = 2.8 V VOUT = 5.0 V VOUT: 500 mV/div IIN: 100 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 100 mA/div 100 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 100 mA/div 100 µs/div VCT: 1 V/div Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VOUT: 500 mV/div IIN: 100 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 100 mA/div 20 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 100 mA/div 20 µs/div VCT: 1 V/div
Rev.8.0 18 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 13. Package Information DFN4D Unit: mm Weight: 1.1 mg (typ.)
Rev.8.0 19 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 14. Land Pattern Dimensions (for reference only) Unit: mm
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