TCR3EM285A

Toshiba Semiconductor

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic 2024-12-09 Rev.6.0

Manufacturer: Toshiba Semiconductor

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Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3EM series 300 mA CMOS Low Dropout Regulator 1. Description The TCR3EM series are CMOS general -purpose single- output voltage regulators with an on/off control input, featuring low dropout voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 0.8 V and 5.0 V and capable of driving up to 300 mA. They feature Overcurrent protection, Thermal shutdown and Auto- discharge. The TCR3E M series is offered in the ultra small plastic mold package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)) and has a low dropout voltage of 160 mV (2.5 V output, IOUT = 150 mA). As small ceramic input and output capacitors 1.0 µF can be used with the TCR3EM series, these devices are ideal for portable applicatio ns that require high-density board assembly such as cellular phones. 2. Applications Power IC developed for portable applications 3. Features

Wide range output voltage line up (VOUT = 0.8 to 5.0 V)
Wide input voltage range (VIN = 1.3 to 5.5 V)
Low control voltage (HIGH) (VCTH = 0.8 V (min))
Low dropout voltage VDO = 160 mV (typ.) at 2.5 V output, IOUT = 150 mA
High ripple rejection ratio (68 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)
Fast load transient response (-57/+55 mV (typ.) at 2.5 V output, IOUT = 1 mA ⇔ 150 mA)
Overcurrent protection
Thermal shutdown
Auto-discharge
Inrush current protection circuit
Pull down connection between CONTROL and GND
Ceramic capacitors can be used (CIN = 1.0 μF, COUT = 1.0 μF) DFN4D Weight: 1.1 mg (typ.) Start of commercial production 2024-08

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 2 4. Absolute Maximum Ratings (Note) (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 420 (Note1) mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 pcs 5. Pin Assignment (top view) 6. Operating Ranges Note 2: Please refer to Dropout Voltage and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Characteristics Symbol Rating Unit Input voltage VIN 1.3 to 5.5 (Note 2) V Control voltage VCT 0 to 5.5 V Output voltage VOUT 0.8 to 5.0 V Output current IOUT DC 300 mA Operation Temperature Topr -40 to 85 °C Output Capacitance COUT ≥ 1.0 µF Input Capacitance CIN ≥ 1.0 µF *Center electrode should be connected to GND or Open VOUT CONTROL GND VIN

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 3 7. List of Products Number, Output voltage and Marking * Please contact your local Toshiba representative if you are interested in products with * sign. Top Marking (top view) Example: TCR3EM25A (2.5 V output) Product No. Output voltage(V) Marking Product No. Output voltage(V) Marking TCR3EM08A 0.8 0E8 TCR3EM27A* 2.7 2E7 TCR3EM085A* 0.85 0EJ TCR3EM275A* 2.75 2EM TCR3EM09A 0.9 0E9 TCR3EM28A 2.8 2E8 TCR3EM095A* 0.95 0EK TCR3EM285A* 2.85 2ED TCR3EM10A* 1.0 1E0 TCR3EM29A* 2.9 2E9 TCR3EM105A* 1.05 1EA TCR3EM295A* 2.95 2EK TCR3EM11A 1.1 1E1 TCR3EM30A* 3.0 3E0 TCR3EM115A* 1.15 1EB TCR3EM305A* 3.05 3EA TCR3EM12A 1.2 1E2 TCR3EM31A* 3.1 3E1 TCR3EM125A* 1.25 1EC TCR3EM32A* 3.2 3E2 TCR3EM13A* 1.3 1E3 TCR3EM33A 3.3 3E3 TCR3EM135A* 1.35 1ED TCR3EM335A* 3.35 3ED TCR3EM14A* 1.4 1E4 TCR3EM34A 3.4 3E4 TCR3EM145A* 1.45 1EL TCR3EM35A* 3.5 3E5 TCR3EM15A* 1.5 1E5 TCR3EM36A* 3.6 3E6 TCR3EM17A 1.7 1E7 TCR3EM39A* 3.9 3E9 TCR3EM18A 1.8 1E8 TCR3EM40A* 4.0 4E0 TCR3EM185A* 1.85 1EG TCR3EM41A* 4.1 4E1 TCR3EM19A* 1.9 1E9 TCR3EM42A* 4.2 4E2 TCR3EM20A 2.0 2E0 TCR3EM45A* 4.5 4E5 TCR3EM24A* 2.4 2E4 TCR3EM48A* 4.8 4E8 TCR3EM25A 2.5 2E5 TCR3EM50A 5.0 5E0 2E5 INDEX Lot code

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 5 9. Electrical Characteristics (Unless otherwise specified, VIN = 2.5 V or VOUT + 1 V (whichever is greater), VIN = 5.5 V (VOUT > 4.5 V), CIN = COUT = 1.0 μF) Characteristics Symbol Test Condition Tj = 25°C Tj = -40 to 85°C (Note 8) Unit Min Typ. Max Min Max Output voltage accuracy VOUT IOUT = 50 mA VIN = VOUT + 1 V (Note 3) VOUT < 1.8 V -18 ― +18 ― ― mV Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V IOUT = 1 mA ― 1 ― ― 10 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 300 mA ― 17 ― ― 59 mV Quiescent current IB(ON) IOUT = 0 mA, VIN = 5.5 V (Note 5) ― 35 ― ― 55 μA Stand-by current IB (OFF) VCT = 0 V, VIN = 5.5 V (Note 5) ― 0.1 ― ― 1.0 μA Control pull down current ICT ― ― 0.1 ― ― 0.2 μA Drop-out voltage (No te 9) VDO IOUT = 150 mA (Note 4) ― 160 ― ― 218 mV IOUT = 300 mA (Note 4) ― 330 ― ― 417 mV Output noise voltage VNO IOUT = 10 mA

10 Hz ≤ f ≤ 100 kHz, Ta = 25°C (Note 4) ― 50 ― ― ― μVrms

Ripple rejection ratio R.R. VIN = 3.5 V VOUT = 2.5 V IOUT = 10 mA, VRipple = 500 mVp-p, Ta = 25°C (Note 4) f = 100 Hz ― 80 ― ― ― dB f = 1 kHz ― 68 ― ― ― f = 10 kHz ― 55 ― ― ― f = 100 kHz ― 43 ― ― ― f = 1 MHz ― 43 ― ― ― Load transient response ⊿VOUT IOUT = 1 mA  150 mA (Note 4) (Note 6) ― -57 ― ― ― mV IOUT = 150 mA  1 mA (Note 4) (Note 6) ― +55 ― ― ― IOUT = 1 mA  300 mA (Note 4) (Note 6) ― -95 ― ― ― IOUT = 300 mA  1 mA (Note 4) (Note 6) ― +100 ― ― ― Output current limit ICL VOUT = VOUT(NOM)*90% (Note 7) ― ― ― 310 550 mA Thermal shutdown threshold TSDH TJ rising ― 160 ― ― ― °C TSDL TJ falling ― 140 ― ― ― °C Control voltage (HIGH) VCTH Control pin input voltage “HIGH” ― ― ― 0.8 5.5 V Control voltage (LOW) VCTL Control pin input voltage “LOW” ― ― ― ― 0.4 V Discharge on resistance RSD (Note 4) ― 25 ― ― ― Ω Note 3: stable state with fixed IOUT condition Note 4: VOUT = 2.5 V Note 5: except Control pull down current (ICT) Note 6: tr = tf = 1.5 μs Note 7: Pulse measurement Note 8: This parameter is warranted by design. Note 9: VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the output voltage when VIN = VOUT (nominal voltage) + 1.0 V VIN1 is the input voltage at which the output voltage becomes 97% of VOUT1 after gradually decreasing the input voltage.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 6 10. Drop-out voltage table (CIN = 1.0 μF, COUT = 1.0 μF) Output voltages Symbol IOUT = 150 mA IOUT = 300 mA Unit Tj = 25°C Tj = -40 to 85°C (Note 10) Tj = 25°C Tj = -40 to 85°C (Note 10) Min Typ. Max Min Max Min Typ. Max Min Max 0.8 V ≤ VOUT ≤ 1.15 V VIN-VOUT ― 687 ― ― 773 ― 1050 (Note 11) ― ― 1165 (Note 11) mV 1.2 V ≤ VOUT ≤ 1.45 V ― 434 ― ― 505 ― 755 (Note 11) ― ― 858 (Note 11) 1.5 V ≤ VOUT ≤ 1.7 V ― 371 ― ― 439 ― 655 ― ― 756 1.8 V ≤ VOUT ≤ 1.9 V ― 309 ― ― 373 ― 559 ― ― 655 2.0 V ≤ VOUT ≤ 2.4 V ― 267 ― ― 328 ― 493 ― ― 587 2.5 V ≤ VOUT ≤ 2.75 V ― 160 ― ― 218 ― 330 ― ― 417 2.8 V ≤ VOUT ≤ 2.95 V ― 156 ― ― 210 ― 315 ― ― 401 3.0 V ≤ VOUT ≤ 3.2 V ― 151 ― ― 205 ― 305 ― ― 390 3.3 V ≤ VOUT ≤ 3.5 V ― 144 ― ― 198 ― 290 ― ― 373 3.6 V ≤ VOUT ≤ 4.1 V ― 137 ― ― 190 ― 275 ― ― 357 4.2 V ≤ VOUT ≤ 5.0V ― 122 ― ― 174 ― 245 ― ― 324 Note 10: This parameter is warranted by design. Note 11: Operating Voltage of VIN should be over 2.5 V.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 7 11. Application Note 11.1. Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at V OUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 11.2. Power Dissipation Board-mounted power dissipation ratings for TCR3EM series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t= 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 pcs GND VOUT CONTROL VIN 1 μF 1 μF CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF 100 200 300 400 500 -40 0 40 80 120 Power dissipation PD (mW) Ambient temperature Ta (°C)

Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend ceramic capacitor.
VOUT rise time Due to the circuit for inrush current reduction, VOUT rise time changes depends on usage condition, surrounding circuit, and surrounding temperature. Therefore, please design with full consideration of usage condition. For example, VOUT becomes stable approximately after 200 µs from VCT apply timing in COUT = 1.0 µF, Ta = 25°C condition.
Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible.
Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 %.
Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 9 12. Representation Typical Characteristics (Note) 12.1. Output Voltage vs. Output Current 0.74 0.76 0.78 0.8 0.82 0.84 0.86 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 0.8 V 85°C 25°C -40°C 2.35 2.4 2.45 2.5 2.55 2.6 2.65 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 2.5 V 85°C 25°C -40°C 4.7 4.8 4.9 5.1 5.2 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 10 12.2. Output Voltage vs. Input Voltage (IOUT = 1 mA) 0.74 0.76 0.78 0.8 0.82 0.84 0.86 Output Voltage (V) Input Voltage (V) VOUT = 0.8 V 85°C 25°C -40°C 2.35 2.4 2.45 2.5 2.55 2.6 2.65 3 3.5 4 4.5 5 5.5 Output Voltage (V) Input Voltage (V) VOUT = 2.5 V 85°C 25°C -40°C 4.7 4.8 4.9 5.1 5.2 Output Voltage (V) Input Voltage (V) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 11 12.3. Dropout Voltage vs. Output Current 200 400 600 800 1000 1200 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 0.8 V 85°C 25°C -40°C 100 200 300 400 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 2.5 V 85°C 25°C -40°C 100 200 300 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12 12.4. Quiescent Current vs. Input Voltage (IOUT = 0 mA) Quiescent Current (μA) Input Voltage (V) VOUT = 0.8 V 85°C 25°C -40°C 3 3.5 4 4.5 5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 2.5 V 85°C 25°C -40°C Quiescent Current (μA) Input Voltage (V) VOUT = 5.0 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 13 12.5. Output Current Limit 0.2 0.4 0.6 0.8 0 200 400 600 Output Voltage (V) Output Current (mA) VOUT = 0.8V 85°C 25°C -40°C 0.5 1.5 2.5 0 200 400 600 Output Voltage (V) Output Current (mA) VOUT = 2.5V 85°C 25°C -40°C 0 200 400 600 Output Voltage (V) Output Current (mA) VOUT = 5.0V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 14 12.6. Ripple rejection Ratio vs. Frequency VIN Ripple = 500 mVp-p, IOUT = 10 mA, Ta = 25°C) 100 120 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 0.8 V 100 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 2.5 V 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 5.0 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 15 12.7. Load Transient Response t r = 1.5 μs, tf = 1.5 μs, Ta = 25°C)  IOUT = 1 mA ⇔ 150 mA VOUT = 0.8 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div VOUT = 2.5 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div VOUT = 5.0 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 16  IOUT = 1 mA ⇔ 300 mA VOUT = 0.8 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div VOUT = 2.5 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div VOUT = 5.0 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 17 12.8. tON / tOFF Response V CT = 0 V ⇔ 1.0 V, Ta = 25°C)  IOUT = 0 mA VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT = 0.8 V VOUT = 2.5 V VOUT = 5.0 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 18  IOUT = 300 mA VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT = 0.8 V VOUT = 2.5 V VOUT = 5.0 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.6.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 21 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.

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Product Information

TCR3EM285A specifications and overview.

Summary

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic 2024-12-09 Rev.6.0

Description

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic 2024-12-09 Rev.6.0

Source title TCR3EM285A Datasheet(PDF) - Toshiba Semiconductor

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