TCR3DM30

TCR3DM TOSHIBA | Alldatasheet

Document overview

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Technical content

Features

• Low Drop-Out voltage VIN-VOUT = 210 mV (typ.) at 2.5 V-output, IOUT = 300 mA VIN-VOUT = 270 mV (typ.) at 1.8 V-output, IOUT = 300 mA VIN-VOUT = 490 mV (typ.) at 1.2 V-output, IOUT = 300 mA
• Low output noise voltage VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz
• Fast load transient response (ΔVOUT = ±80 mV (typ.) at IOUT = 1 mA⇔ 300 mA, COUT =1.0 μF )
• High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, IOUT = 10 mA, f =1kHz )
• Over-current protection
• O ver-temperature protection
• Inrush current protection circuit
• Auto-discharge function
• Pull down connection between CONTROL and GND
• Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF )
• Ultra small package DFN4 (1.0 mm x 1.0 mm ; t 0.58 mm ) BOTTOM VIEW ILLUSTRATION DFN4 Weight : 1.3 mg ( typ.) Start of commercial production 2013-03

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT - 0.3 to VIN + 0.3 V Output current IOUT 300 mA Power dissipation PD 420 (Note1) mW Operation temperature range Topr -40 to 85 °C Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Pin Assignment (top view) VOUT CONTROL GND *Center electrode should be connected to GND or Open VIN

List of Products Number, Output voltage and Marking Please contact your local Toshiba representative if you are interested in products with other output voltages. Top Marking (top view) Example: TCR3DM33 (3.3 V output) Product No. Output voltage(V) Marking Product No. Output voltage(V) Marking TCR3DM10 1.0 1P0 TCR3DM25 2.5 2P5 TCR3DM105 1.05 1PA TCR3DM28 2.8 2P8 TCR3DM11 1.1 1P1 TCR3DM285 2.85 2PD TCR3DM12 1.2 1P2 TCR3DM30 3.0 3P0 TCR3DM13 1.3 1P3 TCR3DM32 3.2 3P2 TCR3DM135 1.35 1PD TCR3DM33 3.3 3P3 TCR3DM15 1.5 1P5 TCR3DM36 3.6 3P6 TCR3DM18 1.8 1P8 TCR3DM45 4.5 4P5 3P3 INDEX Lot code

Electrical Characteristics

(Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage accuracy VOUT I OUT = 50 mA (Note 2) VOUT <1.8 V -18 ― +18 mV Input voltage VIN I OUT = 300 mA 1.75 ― 5.5 V Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 300 mA ― 18 35 mV Quiescent current IB IOUT = 0 mA VOUT = 1.0V ― 65 ― μA VOUT = 1.8V ― 65 ― VOUT = 2.5V ― 68 ― VOUT = 4.5V ― 78 125 Stand-by current IB (OFF) V CT = 0 V ― 0.1 1 μA Drop-out voltage VIN-VOUT I OUT = 300 mA (Note 3) ― 210 290 mV Temperature coefficient TCVO - 40°C ≤ Topr ≤ 85°C ― 75 ― ppm/°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA,

10 Hz ≤ f ≤ 100 kHz, Ta = 25°C (Note 3) ― 38 ― μVrms

Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C (Note 3) ― 70 ― dB Load transient response ΔVOUT I OUT = 1 mA⇔300mA, COUT = 1.0 μF ― ±80 ― mV Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 V Note 2: Stable state with fixed IOUT condition. Note 3: The 2.5 V output product. Drop-out voltage (IOUT = 300 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Output voltages Symbol Min Typ. Max Unit 1.0 V, 1.05 V VIN-VOUT ― 590 750 mV

1.1 V ― 550 650

1.2 V ― 490 600

1.3 V ― 450 550

1.35V, 1.4 V ― 390 520 1.5 V ≤ VOUT < 1.8 V ― 350 450 1.8 V ≤ VOUT < 2.1 V ― 270 380 2.1 V ≤ VOUT < 2.5 V ― 240 330 2.5 V ≤ VOUT < 2.8 V ― 210 290 2.8 V ≤ VOUT < 3.2 V ― 200 250 3.2 V ≤ VOUT < 3.6 V ― 180 230 3.6 V ≤ VOUT ≤ 4.5 V ― 150 200

1. Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at V OUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Board-mounted power dissipation ratings for TCR3DM series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40mm x 40mm (both sides of board), t= 1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 VOUT GND VIN CONTROL 1.0 μF 1.0 μF CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF Ambient temperature Ta ( °C) Power dissipation PD (mW) -40 120 100 200 300 400 500

• Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω.
• Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible.
• Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent.
• Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these ar e not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design.

Representative Typical Characteristics Output Voltage vs. Input Voltage Output Voltage vs. Output Current 1.7 1.8 1.9 0 50 100 150 200 250 300 0.9 1.0 1.1 0 50 100 150 200 250 300 Output voltage V OUT (V) Output voltage V OUT (V) VOUT=1.0V VOUT=1.8V 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 VIN = 2.8 V, CIN = 1 μF, COUT = 1 μF VIN = 2.0 V, CIN = 1 μF, COUT = 1 μF Output current I OUT ( mA) Output current I OUT ( mA) Input voltage V IN (V) Output voltage V OUT (V) Input voltage V IN (V) Input voltage V IN (V) Input voltage V IN (V) VOUT=1.0V VOUT=1.8V VOUT=2.5V CIN = 1 μF, COUT = 1 μF IOUT = 300mA CIN = 1 μF, COUT = 1 μF CIN = 1 μF, COUT = 1 μF VOUT=3.0V CIN = 1 μF, COUT = 1 μF IOUT = 300mA IOUT = 300mA IOUT = 300mA Output voltage V OUT (V) Output voltage V OUT (V) Output voltage V OUT (V) IOUT = 50mA IOUT = 1mA IOUT = 50mA IOUT = 1mA IOUT = 50mA IOUT = 1mA IOUT = 50mA IOUT = 1mA

Dropout Voltage vs. Output Current 2.9 3.1 0 50 100 150 200 250 300 2.4 2.5 2.6 0 50 100 150 200 250 300 Output voltage V OUT (V) Output current I OUT ( mA) VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF VIN = 4.0 V, CIN = 1 μF, COUT = 1 μF Output voltage V OUT (V) Output current I OUT ( mA) VOUT=2.5V VOUT=3.0V 100 150 200 250 300 0 50 100 150 200 250 300 100 200 300 400 500 600 700 0 50 100 150 200 250 300 100 150 200 250 300 0 50 100 150 200 250 300 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 CIN = 1 μF, COUT = 1 μF CIN = 1 μF, COUT = 1 μF Dropout voltage V IN - VOUT (mV) Output current I OUT ( mA) Dropout voltage V IN - VOUT (mV) Output current I OUT ( mA) CIN = 1 μF, COUT = 1 μF CIN = 1 μF, COUT = 1 μF VOUT=2.5V VOUT=3.0V Dropout voltage V IN - VOUT (mV) Output current I OUT ( mA) Dropout voltage V IN - VOUT (mV) Output current I OUT ( mA) VOUT=1.0V VOUT=1.8V

Quiescent Current vs. Input Voltage Quiescent Current vs. Ambient Temperature 100 150 -50 0 50 100 100 150 -50 0 50 100 100 150 200 250 300 350 400 0 1 2 3 4 5 100 150 200 250 300 350 400 0 1 2 3 4 5 100 150 200 250 300 350 400 0 1 2 3 4 5 100 150 200 0 1 2 3 4 5 VOUT=1.0V VIN = 2.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0mA Quiescent current I B ( μA) Ambient temperature Ta ( °C) Quiescent current I B ( μA) VOUT=1.0V VOUT=1.8V Input voltage V IN (V) Quiescent current I B ( μA) Input voltage V IN (V) CIN = 1 μF, COUT = 1 μF IOUT = 0mA CIN = 1 μF, COUT = 1 μF IOUT = 0mA Input voltage V IN (V) Input voltage V IN (V) Quiescent current I B ( μA) Quiescent current I B ( μA) VOUT=3.0V Ambient temperature Ta ( °C) VIN = 4.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0mA CIN = 1 μF, COUT = 1 μF IOUT = 0mA CIN = 1 μF, COUT = 1 μF IOUT = 0mA VOUT=2.5V VOUT=3.0V Quiescent current I B ( μA)

Ripple Rejection Ratio vs. Frequency Output Voltage vs. Output Current 100 10 100 1000 10000 100000 100 10 100 1000 10000 100000 100 10 100 1000 10000 100000 100 10 100 1000 10000 100000 VIN = 3.5 V ,Vripple = 500 mVp-p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C VOUT=3.0V VOUT=2.5V Ripple rejection (dB) Ripple rejection (dB) VIN = 4.0 V ,Vripple = 500 mVp-p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C VIN = 2.0 V ,Vripple = 500 mVp-p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C VIN = 2.8 V ,Vripple = 500 mVp-p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C VOUT=1.0V VOUT=1.8V Ripple rejection (dB) Frequency f ( Hz) Ripple rejection (dB) Frequency f ( Hz) Frequency f ( Hz) Frequency f ( Hz) VOUT=1.0V Output voltage V OUT (V) Output current I OUT ( mA) VOUT=1.8V Output current I OUT ( mA) Output voltage V OUT (V) 5.5V VIN=2.0V 5.5V VIN=2.8V Pulse width= 1ms Pulse width= 1ms

IOUT (mA) Output voltage ⊿VOUT (V) Output current IOUT (mA) Output voltage ⊿VOUT (V) Time t (50 μs/div) VIN = 2.0 V, CIN = 1 μF, COUT = 1 μF 200 400 1.0 1.1 0.9 Output current IOUT (mA) Output voltage ⊿VOUT (V) VOUT=1.8V (IOUT = 1mA ⇔ 300mA) VIN = 2.8 V, CIN = 1 μF, COUT = 1 μF Time t (50 μs/div) VOUT=1.0V (IOUT = 1mA ⇔ 300mA) 200 400 1.8 1.9 1.7 Output current IOUT (mA) Output voltage ⊿VOUT (V) VOUT=3.0V (IOUT = 1mA ⇔ 300mA) 200 400 3.0 3.1 2.9 Time t (50 μs/div) VIN = 4.0 V, CIN = 1 μF, COUT = 1 μF 200 400 2.5 2.6 2.4 Time t (50 μs/div) VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF VOUT=2.5V (IOUT = 1mA ⇔ 300mA) VIN=3.5V Output current I OUT ( mA) VOUT=2.5V Output voltage V OUT (V) VIN=4.0V VOUT=3.0V 5.5V Output current I OUT ( mA) Output voltage V OUT (V) Pulse width= 1ms Pulse width= 1ms 5.5V

t OFF Response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VCT (V) IOUT (mA) IOUT = 50mA 200 Time t (20 μs/div) 2.0 Time t (20 μs/div) 1.0 Time t (20 μs/div) VOUT=1.0V VOUT=2.5V VCT (V) VOUT (V) IOUT = 300mA 0.5 200 1.0 Time t (20 μs/div) IOUT = 50mA 1.0 VIN = 2.0 V, CIN = 1μF, COUT = 1 μF 1.0 IOUT (mA) VIN = 3.5 V, CIN = 1μF, COUT = 1 μF IOUT = 300mA VOUT (V) VCT (V) IOUT (mA) IOUT = 50mA 200 2.0 1.0 VOUT=1.0V VOUT=2.5V VCT (V) VOUT (V) IOUT = 300mA 0.5 200 1.0 IOUT = 50mA 1.0 VIN = 2.0 V, CIN = 1μF, COUT = 1 μF 1.0 IOUT (mA) VIN = 3.5 V, CIN = 1μF, COUT = 1 μF VOUT (V) IOUT = 300mA

DFN4 Unit : mm 0.04 mm (typ.) unevenness exists along the edges of the back electrode to increase shear after soldering. Weight : 1.3 mg ( typ.)

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