TCR3DM14A

TCR3DMXXA TOSHIBA | Alldatasheet

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Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 1 TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DMxxA series 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit 1. Description The TCR3DMxxA series are CMOS general -purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage , fast load transient response and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature Overcurrent protection, Thermal shutdown, Inrush current protection circuit and Auto-discharge. The TCR3DMxxA series is offered in the ultra small plastic mold package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)) and has a low dropout voltage of 216 mV (2.5 V output, I OUT = 300 mA) with low output noise voltag e of 38 μVrms (2.5 V output). As small ceramic input and output capacitors 1.0 μF can be used with the TCR3DMxxA series, these devices are ideal for portable applicatio ns that require high-density board assembly such as cellular phones. 2. Applications Power IC developed for portable applications 3. Features

• Ultra small package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.))
• Wide range output voltage line up (VOUT = 1.0 to 4.5 V)
• Low dropout voltage VDO = 175 mV (typ.) at 3.3 V output, IOUT = 300 mA VDO = 216 mV (typ.) at 2.5 V output, IOUT = 300 mA VDO = 297 mV (typ.) at 1.8 V output, IOUT = 300 mA
• Low output noise voltage (VNO = 38 μVrms (typ.) at 10Hz ≤ f ≤ 100kHz)
• High ripple rejection ratio (72 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz)
• Fast load transient response (±80 mV (typ.) at 2.5 V output, IOUT = 1 mA ⇔ 300 mA)
• Overcurrent protection
• Thermal shutdown
• Inrush current protection circuit
• Auto-discharge
• Pull down connection between CONTROL and GND
• Ceramic capacitors can be used (CIN = 1.0 μF, COUT = 1.0 μF) DFN4D Weight: 1.1 mg (typ.) Start of commercial production 2023-11

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 2 4. Absolute Maximum Ratings (Note) (Ta = 25 °C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 420 (Note1) mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute max imum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40 mm x 40 mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50 % Through hole hall: diameter 0.5 mm x 24 pcs 5. Pin Assignment (Top view) 6. Operating Ranges Note 2: Please refer to Dropout Voltage and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Characteristics Symbol Rating Unit Input voltage VIN 1.5 to 5.5 (Note 2) V Control voltage VCT 0 to 5.5 V Output voltage VOUT 1.0 to 4.5 V Output current IOUT DC 300 mA Operation Temperature Topr -40 to 85 °C Output Capacitance COUT ≥ 1.0 µF Input Capacitance CIN ≥ 1.0 µF *Center electrode should be connected to GND or Open VOUT CONTROL GND VIN

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 3 7. List of Products Number, Output voltage and Marking * Please contact your local Toshiba representative if you are interested in products with * sign. Top Marking (Top view) Example: TCR3DM33A (3.3 V output) Product No. Output voltage (V) Marking Product No. Output voltage (V) Marking TCR3DM10A 1.0 1P0 TCR3DM26A* 2.6 2P6 TCR3DM105A 1.05 1PA TCR3DM27A* 2.7 2P7 TCR3DM11A 1.1 1P1 TCR3DM28A 2.8 2P8 TCR3DM115A* 1.15 1PB TCR3DM285A* 2.85 2PD TCR3DM12A 1.2 1P2 TCR3DM29A* 2.9 2P9 TCR3DM13A* 1.3 1P3 TCR3DM2925A* 2.925 2PH TCR3DM135A* 1.35 1PD TCR3DM30A* 3.0 3P0 TCR3DM14A* 1.4 1P4 TCR3DM31A* 3.1 3P1 TCR3DM15A 1.5 1P5 TCR3DM32A* 3.2 3P2 TCR3DM16A* 1.6 1P6 TCR3DM33A 3.3 3P3 TCR3DM175A* 1.75 1PE TCR3DM35A* 3.5 3P5 TCR3DM18A 1.8 1P8 TCR3DM36A* 3.6 3P6 TCR3DM1825A* 1.825 1PF TCR3DM41A* 4.1 4P1 TCR3DM185A* 1.85 1PG TCR3DM42A* 4.2 4P2 TCR3DM19A* 1.9 1P9 TCR3DM45A 4.5 4P5 TCR3DM25A 2.5 2P5 ― ― ― 3P3 INDEX Lot code

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 4 8. Block Diagram VIN VOUT CONTROL GND Thermal Shut Down Current Limit Control Logic Pull Down

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 5 9. Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1.0 V, CIN = 1.0 μF, COUT = 1.0 μF) Characteristics Symbol Test Condition Tj = 25 °C Tj = -40 to 85 °C (Note 8) Unit Min Typ. Max Min Max Output voltage accuracy VOUT IOUT = 50 mA VIN = VOUT + 1.0 V (Note 3) VOUT < 1.8 V -18 ― +18 ― ― mV Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V IOUT = 1 mA ― 1 ― ― ― mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 300 mA ― 18 ― ― 52 mV Quiescent current IB(ON) IOUT = 0 mA VIN = 5.5 V (Note 5) VOUT = 4.5 V ― 86 ― ― 159 μA Stand-by current IB (OFF) VCT = 0 V, VIN = 5.5 V (Note 5) ― 0.1 ― ― 1 μA Control pull down current ICT ― ― 0.1 ― ― 0.2 μA Drop-out voltage (No te 9) VDO IOUT = 300 mA VOUT = 1.8 V ― 297 335 ― 389 mV VOUT = 2.5 V ― 216 262 ― 296 mV VOUT = 3.3 V ― 175 206 ― 242 mV VOUT = 4.5 V ― 148 179 ― 231 mV Output noise voltage VNO IOUT = 10 mA

10 Hz ≤ f ≤ 100 kHz, Ta = 25 °C (Note 4) ― 38 ― ― ― μVrms

Ripple rejection ratio R.R. VIN = 3.5 V VOUT = 2.5 V IOUT = 10 mA, VIN Ripple = 500 mVp-p, Ta = 25 °C (Note 4) f = 100 Hz ― 75 ― ― ― dB f = 1 kHz ― 72 ― ― ― f = 10 kHz ― 54 ― ― ― f = 100 kHz ― 48 ― ― ― f = 1 MHz ― 55 ― ― ― Load transient response ⊿VOUT IOUT = 1 mA → 300 mA (Note 4) (Note 6) ― -80 ― ― ― mV IOUT = 300 mA → 1 mA (Note 4) (Note 6) ― +80 ― ― ― Output current limit ICL VOUT = VOUT(NOM)*90 % (Note 7) ― ― ― 320 650 mA Thermal shutdown threshold TSDH TJ rising ― 160 ― ― ― °C TSDL TJ falling ― 130 ― ― ― °C Control voltage (HIGH) VCTH Control pin input voltage “HIGH” ― ― 0.8 5.5 V Control voltage (LOW) VCTL Control pin input voltage “LOW” ― ― 0 0.4 V Discharge on resistance RSD (Note 4) ― 45 ― ― ― Ω Note 3: stable state with fixed IOUT condition Note 4: VOUT = 2.5 V Note 5: except Control pull down current (ICT) Note 6: tr = tf = 1.0 μs (Defined when 10 % to 90 % is 0.8 µs) Note 7: Pulse measurement Note 8: This parameter is warranted by design. Note 9: VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the output voltage when VIN = VOUT + 1.0 V. VIN1 is the input voltage at which the output voltage becomes 97 % of V OUT1 after gradually decreasing the input voltage.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 6 10. Drop-out voltage table (IOUT = 300 mA, CIN = 1.0 μF, COUT = 1.0 μF) Output voltages Symbol Tj = 25 °C Tj = -40 to 85 °C (Note 10) Unit Min Typ. Max Min Max 1.0 V, 1.05 V VIN-VOUT ― 642 738 ― 790 mV 1.1 V, 1.15 V ― 566 666 ― 716

1.2 V ― 500 592 ― 644

1.3 V ― 456 535 ― 590

1.35V, 1.4 V ― 434 506 ― 563 1.5 V ≤ VOUT < 1.8 V ― 367 419 ― 481 1.8 V ≤ VOUT < 1.9 V ― 297 335 ― 389 1.9 V ≤ VOUT < 2.5 V ― 277 309 ― 365 2.5 V ≤ VOUT < 2.8 V ― 216 262 ― 296 2.8 V ≤ VOUT < 3.2 V ― 196 233 ― 268 3.2 V ≤ VOUT < 3.6 V ― 179 211 ― 247 3.6 V ≤ VOUT ≤ 4.5 V ― 168 199 ― 240 Note 10: This parameter is guaranteed by design.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 7 11. Application Note 11.1. Recommended Application Circuit The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 11.2. Power Dissipation Board-mounted power dissipation ratings for TC R3DMxxA series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24 pcs VOUT GND VIN CONTROL 1.0 μF 1.0 μF CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF 100 200 300 400 500 -40 0 40 80 120 Power dissipation PD (mW) Ambient temperature Ta (°C)

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 8 11.3. Attention in Use

• Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend ceramic capacitor.
• Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible.
• Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 %.
• Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits . Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 9 12. Representation Typical Characteristics (Note) 12.1. Output Voltage vs. Output Current (VIN = VOUT + 1.0 V) 0.9 0.95 1.05 1.1 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 1.0 V 85°C 25°C -40°C 2.4 2.45 2.5 2.55 2.6 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 2.5 V 85°C 25°C -40°C 4.3 4.4 4.5 4.6 4.7 0 100 200 300 Output Voltage (V) Output Current (mA) VOUT = 4.5 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 10 12.2. Output Voltage vs. Input Voltage (IOUT = 1 mA) 0.9 0.95 1.05 1.1 Output Voltage (V) Input Voltage (V) VOUT = 1.0 V 85°C 25°C -40°C 2.4 2.45 2.5 2.55 2.6 3 3.5 4 4.5 5 5.5 Output Voltage (V) Input Voltage (V) VOUT = 2.5 V 85°C 25°C -40°C 4.3 4.4 4.5 4.6 4.7 Output Voltage (V) Input Voltage (V) VOUT = 4.5 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 11 12.3. Dropout Voltage vs. Output Current 200 400 600 800 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 1.0 V 85°C 25°C -40°C 100 200 300 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 2.5 V 85°C 25°C -40°C 100 200 300 0 100 200 300 Dropout Voltage (mV) Output Current (mA) VOUT = 4.5 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 12 12.4. Quiescent Current vs. Input Voltage (IOUT = 0 mA) 100 150 200 Quiescent Current (μA) Input Voltage (V) VOUT = 1.0 V 85°C 25°C -40°C 100 150 200 3 3.5 4 4.5 5 5.5 Quiescent Current (μA) Input Voltage (V) VOUT = 2.5 V 85°C 25°C -40°C 100 150 200 Quiescent Current (μA) Input Voltage (V) VOUT = 4.5 V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 13 12.5. Output Current Limit (VIN = VOUT + 1.0 V) 0.2 0.4 0.6 0.8 1.2 0 200 400 600 800 Output Voltage (V) Output Current (mA) VOUT = 1.0V 85°C 25°C -40°C 0.5 1.5 2.5 0 200 400 600 800 Output Voltage (V) Output Current (mA) VOUT = 2.5V 85°C 25°C -40°C 0 200 400 600 800 Output Voltage (V) Output Current (mA) VOUT = 4.5V 85°C 25°C -40°C Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 14 12.6. Ripple rejection Ratio vs. Frequency (CIN = none, COUT = 1.0 μF, VIN = VOUT + 1.0 V, VIN Ripple = 500 mVp-p, IOUT = 10 mA, Ta = 25°C) 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 2.5 V 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 1.0 V 100 1k 10k 100k 1M 10M Ripple Rejection Ratio (dB) Frequency (Hz) VOUT = 4.5 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 15 12.7. Load Transient Response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VOUT = 1.0 V VOUT = 2.5 V VOUT = 4.5 V VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div VOUT: 50 mV/div IOUT: 200 mA/div 50 µs/div

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 16 12.8. tON / tOFF Response (CIN = 1.0 μF, COUT = 1.0 μF, VIN = VOUT + 1.0 V, VCT = 0 V ⇔ 1.0 V, Ta = 25°C) ⚫ IOUT = 0 mA VOUT = 1.0 V VOUT = 2.5 V VOUT = 4.5 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 17 ⚫ IOUT = 300 mA VOUT = 1.0 V VOUT = 2.5 V VOUT = 4.5 V Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 500 mV/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 1 V/div IIN: 500 mA/div 20 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div VOUT: 2 V/div IIN: 500 mA/div 50 µs/div VCT: 1 V/div

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 18 13. Package Information DFN4D Unit: mm Weight: 1.1 mg (typ.)

Rev.5.0 © 2023-2024 Toshiba Electronic Devices & Storage Corporation 19 14. Land Pattern Dimensions (for reference only) Unit: mm

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