TCA671

TCA671 SIEMENS | Alldatasheet

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4?E D MM 8235605 0034870 & MBSIEG SIEMENS SIEMENS AKTIENGESELLSCHAF THAD-OD Transistor Array with 5 NPN Transistors TCA 671 TCA 871 TCA 971 TCA 991 Features Bipolar IC @ Versatile use © Slight Ve: and B deviations @ High output current @ Good thermal matching LEX @ TCA 971;G/TCA 991;G compatible with ah 3045/46/86 and 3146 Si Type Ordering Code Package pris TCA 671 Q67000-T1 P-DIP-14 BTCA 671G Q67000-A2366 | P-DSO-14 (SMD) BTCA 871 Q67000-T2 P-DIP-14 oa TCA 871G Q67000-A2367 . P-DSO-14 (SMD) iW BTCA 971 Q67000-T11 P-DIP-14 STCA971G | Q67000-A8075 | P-DSO-14 (SMD) |, BTCA 991 Q67000-112 P-DIP-14 aTCA991G | Q67000-A8076 _| P-DSO-14 (SMD) TCA 671, TCA 871, TCA 971, and TCA 991 are monolithic integrated transistor arrays each consisting of five NPN transistors. The arrays are well suited for switching and amplifying applications up to approx. 30 MHz. Due to a uniform design, the transistor characteristics show only slight deviations. The arrays are preferably intended for lamp drivers, amplifiers, pulse generators, and types TCA 971 and TCA 991 especially for discrete differential amplifiers. 297 8.90

42E D MM 8235605 0034871 8 MBSIEG” SIEMENS AKTIENGESELLSCHAF TCA 671 TCA 871 TCA 971 43-25 TCA 991 Pin Configurations (top view) TCA 671, TCA 871 substrate = pin 3 TCA 671 G, TCA 871G, ‘TCA 971, TCA 991 substrate = pin 13 TCA 971 G, TCA 991G ‘Substrate connection has to be ‘on the most negative potential. ie «Pp % 4 1h 2a 3 2 ® |S 3 12

3 T iJ 7% 4 12 4

4Q 1} 5 mp ‘ 9 sO ‘Sh ios : ‘ 3 6] 1]9 7 ash ‘ Test Circuit for Switching Times tus ae i OVAL # <5ns, v<001 f<5 Yes 2, = 100k fi +10V(Y, Ose Son Ry Ro wtp Pht gt 1 2 cr Switching Times To Igy. Tap = 10 :1..1 MA; Ry = 5 KQ; Ry = 5 KQ; Ven = 3.5 Vv; R, =9902 fon 85 (< 150) NS tore 480 (< 800) ns Te: Ig) —leq = 100: 10: 10 mA, Ry =500 Q; Ry =700 Q, Vag =5 V; RL = 98 Q ton 55 (< 150) NS — tore 450 (< 800) ns Siemens Aktiengesellschaft 298

WOE D MM 8235605 0034872 T MMESIEG STEMENS AKTIENGESELLSCHAF TCA 671 TCA 871 +CA 991 Absolute Maximum Ratings ___ Limit Values a Parameter TCA 671 TCA 871 Unit TCA 971 | TCA 991 Collector-base breakdown voltage Veao 45 35 v Collector-emitter breakdown voltage Veeco 42 32 v Emitter-base breakdown voltage Veso 6 i6 v Collector-substrate voltage (Jc=100HA) _| Vos 70 | 60 v Collector current Ig 200 200 mA Base current Is 10 10 mA Permissible power dissipation for a single transistor mw Junction temperature y 150 1150 °C Storage temperature range Tog =40t0125 | -40t0125 | °C Thermal resistance system -air TCA 671 G; TCA 871G; Rinse | 85 85 kw _ TCA97IG:TCA9NG | Ansa | 145 | 1485, KW Operating Range Ambienttemperature Ss Ta «| 25 t085 | ~25t085 | “C Characteristics Ty = 25°C Limit Values Limit Values TCA 671 TCA 871 TCA 971 TCA 991 Parameter [in [oe [mae | i [wo [mak | Unit Differential base current for | transistors T1 =T2 | | at Vee = 3 V, Io = 1 mA Ten fos |1 BA Base-emitter voltage at Vor = 3 V, [o= 1. mA Voc 0.65 0.65 v Differential base-emitter voltage for transistors T1 + T2 | | at Vog = 3 V, Io = 1mA Veco 2 5 4 mv Differential base-emitter voltage for transistors T3 to TS at Voc = 3 V, Ig = 1 mA Veco 4 | 10 6 mv Temperature coefficient of base-emitter voltage AVeg -2 mV/k at Voge = 3 V, Io = 1 mA aT 7 Transition frequency fy 300 | 550 |_| MHz Siemens Aktiengesellschatt 299

47E D MM 8235605 0034873 1 MBSIEG SIEMENS AKTIENGESELLSCHAF TCA 671 TCA 871 — a a SA 971 T-43-25 A991 Characteristics T.= 25°C 7 — _ Limit Values. | —_Limit Values TCA 671 TCA 871 TCA971 TcAgst Collector-base breakdown voltage | at Ic=100 pA, Je =0 | Yeso | 45 | 35 | v Collector-emitter breakdown voltage | | at Io = 100 pA, Ip =0 | Veeo | 42 | 32 iv Collector-substrate breakdown voltage | | at Ic = 100 pA, Ics = 0 | Ves 70 60 v Emitter-base breakdown voltage H at Ip = 100 pA, Io =0 Veso | 6 6 v Collector-emitter saturation voltage atIo=50MA;Ip=5MA Vor sat 200 | 350 200 | 350 | mv Collector-base cutoff current | at Veg = 25 V, Ip=0 Toso | 0.02 | 1 0.02 | 10 | pA Collector-emitter cutoff current i | at Vor = 25 V, Ig = 0 Iceo (ee 10) | pA Static current gain B | at Vor = 3 V, Ico = 100 HA 40 | 80 | | 40 80 |} at Vor = 3 V, Ig = 1. mA 100 | 140 | | 100 | 140 at Veg = 3 V, [c= 10 mA } 100 | 160 | 100 | 160 at Voz = 3 V, Ig = 100 mA ____| 40 | 100 40 | 100 Siemens Aktiengesellschaft 300

4Y?E D MM 6235605 0034874 3 MSIEG SIEMENS AKTIENGESELLSCHAF TGA 671 TCA 991 Current gain versus collector current Transition frequency T-43-25 Voe = 3 V, | = 25°C versus collector current Miz Voe=3V, Ty = 25°C an a ny EEEEE all i 1c A SSpSSSES . Ass i * SS TNT at = oe =! =a dee TTA TT eed ATI _aaeeeees Ps ! e CLE AT TT » EEEEF EG ow ot of gl wana 0 6B 50 a 0 mA rk ald Collector-emitter saturation voltage Base-emitter voltage versus collector current versus input current ; B=20 im Voe = 3 V: Ty =25°C A “TO a _ Ln ill ana f a BUN Za ann mn ell Sanat all CHA Coa v0 i Ct adil Gea a H ean OL at ran a Hl COU th TT 10 Ly 0? 10° ma ro ow a! wma i, eh Siemens Aktiengeselischaft 301

y7E D mM 8235605 0034875 5 WMBSIEG TCA 671 SIEMENS AKTIENGESELLSCHAF TCA 871 —— ooo T-43-25 —TCA971 TCA 991 Output characteristics Output characteristics Collector current versus Collector current versus collector-emitter voltage collector-emitter voltage Ig = parameter Ig= parameter ‘mA (common emitter configuration) mA (common emitter configuration) 20 an] Fi lr | | ii k = - erat Ks | ove = eal 1 i ie — 2 ic = a rs i | (a a | + 5 | |= cal | fia 0s fi, if F 5 naa SRT AREER ee | A <1 = 10) oe mM Lt o 1 2 3 & 5¥ o 1 2 3 & SY¥ oe Ve Output characteristics Collector current versus collector-emitter voltage Ig = parameter mA (common emitter configuration) ™ T pi ooty & | 1 inal Jg=10 150 | 309 JE a WZ £07 ow fark Yi7-—— 205 Yr

50 Ya —T C fh

YH “aa poo » fit 0 1 2 3 4 sv oe Siemens Aktiengeselischatt 302