TC9WMA1FK TOSHIBA | Alldatasheet
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Technical content
Features
/Gb7/G20Serial data input/output /Gb7/G20Programmable in units of one word and collectively erasable in one operation /Gb7/G20Automatically set programming time (built-in timer) /Gb7/G20Programming time: 10 ms (max) (VCC = 3.0 to 3.6 V) 13 ms (max) (V CC = 2.7 to 3.6 V) /Gb7/G20Overwriting enabled or disabled by software /Gb7/G20Single power supply and low power consumption /Gb7/G20Operating power supply voltage (2.7 to 3.6 V) /Gb7/G20Wide operating temperature range (−40 to 85°C) Product Marking Pin Assignment (top view) Weight: 0.01 g (typ.) Type name US8 DI DO 765 1234 GND NCVCC RST CLKCS
Pin Name Input/Output Function CS Input Chip select A low on CS selects the chip. Always return CS high temporarily before executing instructions. CLK Input Clock input The data on DI is latched by a rising edge of CLK . Data is output to DO by a falling edge of CLK . CLK is effective when CS is low. DI Input Serial data input This pin is used to enter addresses, commands, and data into the chip. DO Output Serial data output This pin outputs data from the chip. RST Input Reset input A low on this input resets the chip. NC /Gbe No connection (not connected internally) VCC 2.7 V~3.6 V GND Power supply/G20
0 V (GND)
(booster circuit) Memory cell Data register Timing generator Address register Chip select Input/Output circuit Clock inpu t Data Input DI Data Output DO VCC Power supply Reset input GND Ground Command register RST CLK CS
- Types of Instructions Command Operation Address C0 C1 C2 C3 Data Read A0~A6, 0 1 0 0 0 0000 P r o g r a m A 0 ~ A 6 , 0 0110 0000 D 0 ~ D 7 *: Don’t care 2. Operation Method Be sure to return CS and CLK high temporarily before entering instructions. After CS is asserted low, CLK becomes effective, acting as a serial transfer synchronizing signal. The data on DI is latched by a rising edge of CLK , while data is output to DO by a falling edge of CLK . Instructions can only be executed when the chip is not being programmed or collectively erased (i.e., when the ready/busy status signal is high). However, the Busy Monitor instruction can be entered at any time. Only the commands listed in the above table can be used. Do not use any other command. (1) Read When the Read instruction is entered, memory data at the specified address is read out and is serially output from the DO pin. (2) Program When the Program instruction is entered, overwrite operation automatically starts internally in the chip, and memory data at the specified address is overwritten with the input data. After the instruction is entered, CS can be returned high even while overwrite operation is in progress internally. (3) All Erase When the All Erase instruction is entered, erase operation automatically starts internally in the chip, and memory data at all addresses are erased. After the instruction is entered, CS can be returned high even while erase operation is in progress internally. Execution of this command clears the memory data to 0. (4) Busy Monitor When the Busy Monitor instruction is entered, a ready/busy status signal is output from the DO pin. This output signal is low while the chip is being programmed or collectively erased, and is high after programming or collective erase operation is completed. The ready/busy status signal is output continuously until CS is returned high. (5) Overwrite Enable/Disable When the Overwrite Enable instruction is entered, the chip is placed in overwrite enable mode, where the Program and All Erase instructions are enabled. When the Overwrite Disable instruction is entered, the chip is placed in overwrite disable mode, where the Program and All Erase instructions both are disabled. Once the chip is placed in overwrite disable mode, it remains disabled against overwriting unless the Overwrite Enable instruction is entered.
- Precautions to be Taken at Power ON/OFF (1) A wait time of 1 ms is required before the chip starts operation after it is powered on. (2) RST must be pulled low when the power to the chip turns ON or OFF. (3) The chip is placed in overwrite disable mode by reset. 4. Timing Chart (1) Read (2) Program CS CLK 1 2 7 8 9 10 11 12 13 14 15 16 17 24 23 A0 A1 00 1 0 10 0 00DI DO CommandAddress Hi-Z A6 D6 D7 D0 CS CLK 1 2 7 8 9 10 11 12 13 14 15 16 17 24 23 A0 A1 10 0 0 00 0 00DI DO Hi-Z CommandAddress Hi-Z Data D6 D7
(3) All Erase (4) Busy Monitor (5) Overwrite Enable/Disable CS CLK 1 2 7 8 9 1 01 11 21 31 41 51 6 10 0000Enable DO Command Hi-Z 11 0000Disable Command DI CS CLK 1 2 7 8 9 10 11 12 13 14 15 16 100 0 0 0DI DO Command Hi-Z Hi-Z CS CLK 1 2 7 8 9 10 11 12 13 14 15 16 10 0000DI DO Command Hi-Z
Maximum Ratings (GND /G3d/G3d/G3d/G3d 0 V) Characteristics Symbol Rating Unit Power supply voltage V CC /G2d0.3~4.6 V Input voltage V IN /G2d0.3~VCC /G2b 0.3 V Output voltage V OUT /G2d0.3~VCC /G2b 0.3 V Power dissipation P D 200 (25°C) mW Soldering temperature (in time) T sld 260 (10 s) °C Storage temperature T stg /G2d55~125 °C Operating temperature T opr /G2d40~85 °C Recommended Operating Conditions (GND /G3d/G3d/G3d/G3d 0 V, Topr /G3d/G3d/G3d/G3d /G2d/G2d/G2d/G2d40~85°C) Characteristics Symbol Test Condition Min Max Unit Power supply voltage V CC 2.7 3.6 V Recommended Operating Conditions (GND /G3d/G3d/G3d/G3d 0 V, VCC /G3d/G3d/G3d/G3d 2.7~3.6 V, Topr /G3d/G3d/G3d/G3d /G2d/G2d/G2d/G2d40~85°C) Characteristics Symbol Pin Test Condition Min Max Unit Low level input voltage V IL V CC /G3d 2.7 V 0 0.45 V VIH1 CS , DI, RST VCC /G3d 3.6 V 1.6 V CC High level input voltage VIH2 CLK V CC /G3d 3.6 V 2.2 V CC V Operating frequency f CLK 0 1 MHz
Electrical Characteristics
D.C. Characteristics (GND /G3d/G3d/G3d/G3d 0 V, VCC /G3d/G3d/G3d/G3d 2.7~3.6 V, Topr /G3d/G3d/G3d/G3d /G2d/G2d/G2d/G2d40~85°C) Characteristics Symbol Test Condition Min Typ. Max Unit Input current I LI /Gbe /Gbe /Gb15 /G6dA Output leakage current I LO /Gbe /Gbe /Gb15 /G6dA High level output voltage V OH V CC /G3d 2.7 V, IOH /G3d /G2d1 mA VCC /G2d 0.4 /Gbe /Gbe V Low level output voltage V OL V CC /G3d 2.7 V, IOL /G3d 2 mA /Gbe /Gbe 0.4 V Quiescent supply current I CC1 (Note1) /Gbe /Gbe 5 /G6dA Supply current during read I CC2 (Note2) /Gbe /Gbe 1.5 mA Supply current during all erase/program ICC3 (Note3) /Gbe /Gbe 1.0 mA Note 1: CS /G3d 1 (except when busy, however) Note 2: Current that flows for a period from a fall of the 14th to a fall of the 17th CLK pulse when executing the read instruction. Note 3: Current that flows while executing the all erase or program instruction. A.C. Characteristics (GND /G3d/G3d/G3d/G3d 0 V, VCC /G3d/G3d/G3d/G3d 2.7~3.6 V, Topr /G3d/G3d/G3d/G3d /G2d/G2d/G2d/G2d40~85°C) Characteristics Symbol Test Condition Min Max Unit Maximum clock frequency f MAX 0 1 MHz twCLK (L) Minimum clock pulse width twCLK (H) 400 /Gbe ns Minimum reset pulse width t WRST 1 /Gbe /G6ds Minimum chip select pulse width t WCS 1 /Gbe /G6ds Reset setup time t RSS RST setup time when CS is switched over 1 /Gbe /G6ds Clock setup time t CKS CLK setup time when CS is switched over 250 /Gbe ns CS setup time t CSS CS setup time when CLK is switched over 250 /Gbe ns tpLH tpHL tpZH tpZL Time from CLK switchover until valid data is output /Gbe 250 Propagation delay time (Note4) tpLZ tpHZ Time from CS switchover until output data goes Hi-Z /Gbe 500 ns Input data setup time t s Input data setup time when CLK is switched over 250 /Gbe ns Input data hold time t h Input data hold time when CLK is switched over 250 /Gbe ns Note 4: C L /G3d 100 pF, RL /G3d 1 k/G57
E2PROM Characteristics (GND /G3d/G3d/G3d/G3d 0 V, 3.0 V /G3c/G3c/G3c/G3c/G20/G20/G3d/G3d/G3d/G3dVCC /G3c/G3c/G3c/G3c/G20/G20/G3d/G3d/G3d/G3d3.6 V, Topr /G3d/G3d/G3d/G3d /G2d/G2d/G2d/G2d40~85°C) Characteristics Symbol Test Condition Min Typ. Max Unit All erase time t E /Gbe/G206 10 ms Program time t P /Gbe/G206 10 ms Endurance N EW 1 /Gb4 105 /Gbe /Gbe/G20Times Data retention time t RET 10 /Gbe/G20 /Gbe/G20Year E2PROM Characteristics (GND /G3d/G3d/G3d/G3d 0 V, 2.7 V /G3c/G3c/G3c/G3c/G20/G20/G3d/G3d/G3d/G3dVCC /G3c/G3c/G3c/G3c/G20/G20/G3d/G3d/G3d/G3d3.6 V, Topr /G3d/G3d/G3d/G3d /G2d/G2d/G2d/G2d40~85°C) Characteristics Symbol Test Condition Min Typ. Max Unit All erase time t E /Gbe/G207 13 ms Program time t P /Gbe/G207 13 ms Endurance N EW 1 /Gb4 105 /Gbe /Gbe/G20Times Data retention time t RET 10 /Gbe/G20 /Gbe/G20Year Capacitance Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Input capacitance C IN 3.3 4 pF Output capacitance C O 3.3 3 pF Equivalent Internal capacitance C PD f IN /G3d 1 MHz (Note5) 3.3 8.5 pF Note 5: C PD denotes the IC’s internal equivalent capacitance calculated from the amount of current it consumes while operating. The average current consumption during non-loaded operation is obtained from the equations below. I CC (Read) /G3d fCLK･CPD･VCC /G2b ICC1 /G2b ICC2･3.5/24 I CC (Prog) /G3d fCLK･CPD･VCC /G2b ICC1 /G2b ICC3
A.C. Characteristics Timing Chart HiZ tCKS VCC CS VCC/2 tCSS t CKS tCSS VCC/2 ts th VCC/2 VCC/2 tPLH tPHL VCC/2 tPLH tPHL VCC/2 tPLZ tPHZ VCC/2 VCC/2 tPZH tPZL VCC/2 VCC/2 HiZ tWCLK (L) tWCLK (H) VCC/2 VCC/2 GND VCC GND VCC GND VCC GND V CC GND VCC GND VCC GND V CC GND CLK CLK DI CLK DO CS CLK DO CLK DO CLK VCC/2 tWRST VCC/2 VCC GND VCC GND tRSS VCC/2 tWCS VCC/2 VCC/2 RST CS RST CS VCC/2 VCC GND
Input/Output Circuits of Pins Pin Name Type Input/Output Circuit Remarks CS DI RST Input CLK Input Hysteresis input DO Output Initial “HiZ” Output control signal VCC
Weight: 0.01 g (typ.)
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The products described in this document are subject to the foreign exchange and foreign trade laws. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EBARESTRICTIONS ON PRODUCT USE