TC7W32F TOSHIBA | Alldatasheet

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TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W32F, TC7W32FU, TC7W32FK DUAL 2-INPUT OR GATE The TC7W32 is a high speed C2MOS 2-INPUT OR GATE TorwaaF fabricated with silicon gate C2MOS technology. It achives the high speed operation similar to equivalent LSTTL while maintaining the C?MOS low power dissipation. The internal circuit is composed of 3 stages including q J buffer output, which enables high noise immunity and Ke Xe stable output. NG — All inputs are equipped with protection circuits against S static discharge or transient excess voltage. SOP8-P-1.27 FEATURES TC7W32FU ® High Speed woes eee. tpg =6ns (Typ) at Véc=5v Ta=25°C = 28% Vcc (Min.) - SSOP8-P-0.65 e =loL= symmetrical Output Impedance ... |loH|=loL=4mA TC7w32FK (Min.) © Wide Operating Voltage Range ... Vcc (opr) =2~6V MARKING TC7W32FU TC7W32FK TC7W32F type name Type Name fF) fi fi £4 oooo Es re 4 oonn SSOP8-P-0.50A 7W32F 7W32 Lot No. 7 Lot No. Ww Weight 32 SOP8-P-1.27 _: 0.05g (Typ.) Py e le SSOP8-P-0.65 : 0.02g (Typ.) oo a SOT SSOP8-P-0.50A : 0.01g (Typ.) OO 8 OOOO 980910EBA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. Ste products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-09-24 1/6

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Range DC Input Voltage =0.5~Vcc +0.5 DC Output Voltage Input Diode Current Output Diode Current [lox [20 ma DC Output Current [tour [#25 maa DC Vec/Ground Current Power Dissipati 300 (FM8, SM8) Ww ‘ower Dissipation 200 (US8) m' = 65~150 Lead Temperature (10s) [ T [| 260° LOGIC DIAGRAM TRUTH TABLE PIN ASSIGNMENT (TOP VIEW) (1) 2a @ yy pH tH TH | eo 1 28 pt | Ht H | ve fe] 28 | | GND [a] 15] 2A RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Range | Vec_| 6 | -v_ Output Voltage Operating Temperature =40~85 0~1000 (Vcc =2.0V) Input Rise and Fall Time tr, te O0~ 500 (Vcc =4.5V) 0~ 400 (Vcc =6.0V) 1998-09-24 2/6

DC ELECTRICAL CHARACTERISTICS Ta=25°C Ta = - 40~85°C CHARACTERISTIC | SYMBOL TEST CONDITION [Vee [Min [TvP. [MAX MIN. | max. | UNIT A 2.0 1.5 1.5 pigh-tevel Vin 4.5 | 3.15 3.15 v nput Voltage 6.0 | 42 42 Low-Level 2.0 0.5 0.5 hot Volt VIL 45 1.35 135 | v nput voltage 6.0 18 1.8 2.0 1.9] 2.0 1.9 . loH=-20nA | 45] 44] 45 44 High-Level ; Vou |VIN=MIH 60 | 59| 6.0 59 v Output Voltage or VIL lon= —4mA 4.18 | 431 4.13 loH = -5.2mA 5.68 | 5.80 5.63 2.0 0.0} 0.1 lot = 20xA 45 0.0| 0.1 weve! tt Vor |Vin=Vi 6.0 0.0} 0.1 v utput Voltage loL=4mA 0.17 | 0.26 0.33 loL=5.2mA 0.18 | 0.26 0.33 Input Leakage _ + + Current Vin=Vcc or GND +0.1 £10 A = bs Quiescent _ a AC ELECTRICAL CHARACTERISTICS (C, = 15pF, Vcc = 5V, Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Ta= 25°C UNIT [ MIN. | TYP. [MAX.| Output Transition tTLH - ns Time tTHL Propagation Delay tpLH 12 Time ‘tpHL AC ELECTRICAL CHARACTERISTICS (C; =50pF, Input t, = t¢ = 6ns) Ta=25°C Ta = -40~85°C CHARACTERISTIC | SYMBOL TEST CONDITION LALLA UNIT wae 2.0 25 75 Cutout Transition wr 45 7/45 ns THE 6.0 6 | 13 A 2.0 27 75 Propagation Delay fo 45 8 15 ns PHL 6.0 7 | 13 Input Capacitance | Gy [Ss — | S| OT — | 10 | Power Dissipation pF (Note 1) : CPD is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit). Average operating current can be obtained by the equation hereunder. Icc (opr) = CPD'Vcc'fin + !cc/2 (per gate) 1998-09-24 3/6

SOP8-P-1.27 Unit : mm 45°93 3.1+0.2 S q i] EH} 1) r = 8 3 r EH fo 6 a 4- 5 ied barbed e 3 r rl Oo z . oOo Weight : 0.05g (Typ.) 1998-09-24 4/6

SSOP8-P-0.65 Unit : mm 4,040.1 2.840.1 gt 8 ~8 el od a "| 8 3 4 od N| wo o 4 5 wo - FI a 3 Z o Weight : 0.02g (Typ.) 1998-09-24 5/6

SSOP8-P-0.50A Unit : mm 3.140.1 2.340.1 i 8 eg | 3 eP g] 2 S Bl o a} 2 o 4 5 - fi 3 x Fu 3 Z o Weight : 0.01g (Typ.) 1998-09-24 6/6