TC660 TELCOM | Alldatasheet
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Technical content
4-5TELCOM SEMICONDUCTOR, INC. TC660 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
FEATURES
n Pin Compatible with TC7660 n Converts (+1.5V to 5.5V) to (– 1.5V to – 5.5V) n Low Cost and Easy to Use — Only Two External Capacitors Required
APPLICATIONS
n µP Based Controllers n Process Instrumentation n Automotive Instruments GENERAL DESCRIPTION The TC660 DC-to-DC voltage converter generates a negative voltage supply, that can support a 100mA maxi- mum load, from a positive voltage input of 1.5V to 5.5V. Only two external capacitors are required. Power supply voltage is stored on an undedicated capacitor then inverted and transferred to an output reser- voir capacitor. The on-board oscillator normally runs at a frequency of 10kHz with V + at 5V. This frequency can be lowered by the addition of an external capacitor from OSC (pin 7) to ground, or raised to 90kHz by connecting the frequency control pin (FC) to V +, in order to optimize capaci- tor size, quiescent current, and output voltage ripple frequency. Operation using input voltage between 1.5V and 3.0V is accommodated by grounding the LV input (pin 6). Operation at higher input voltages (3.0V to 5.5V) is accom- plished by leaving LV open. The TC660 open circuit output voltage is within 0.1% of the input voltage with the output open-circuited. Power conversion efficiency is 98% when output load is between 2mA and 5mA. TC660CPA TC660EPA FC CAP + GND CAP – VOUT LV OSC +V 1 TC660COA TC660EOA FC CAP + GND CAP – VOUT LV OSC TC660 GND INTERNAL VOLTAGE REGULATOR RC OSCILLATOR VOLTAGE– LEVEL TRANSLATOR ÷ 2 V + CAP + OSC LV LOGIC NETWORK VOUT CAP –4 1FC FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION (DIP and SOIC)
ORDERING INFORMATION
Part No. Package Temp. Range TC660COA 8-Pin SOIC 0 °C to +70°C TC660CPA 8-Pin Plastic DIP 0 °C to +70°C TC660EOA 8-Pin SOIC – 40 °C to +85°C TC660EPA 8-Pin Plastic DIP – 40 °C to +85°C TC7660EV Evaluation Kit for Charge Pump Family TC660-2 9/10/96 EVALUATION KIT AVAILABLE
4-6 TELCOM SEMICONDUCTOR, INC. ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With, V+ = 5V, COSC = Open, C1, C2 = 150µF, FC = Open, Test Circuit (Figure 1), unless otherwise indicated. Symbol Parameter Test Conditions Min Typ Max Unit I+ Supply Current R L = ∞ FC pin = OPEN or GND — 200 500 µA FC pin = V+ —1 3 m A V+ Supply Voltage Range LV = HIGH, R L = 1 kΩ 3 — 5.5 V LV = GND, RL = 1 kΩ 1.5 — 5.5 LV = OUT, RL = 1 kΩ (Figure 9) 2.5 — 5.5 R OUT Output Source Resistance I OUT = 100mA — 6.5 10 Ω IOUT Output Current V OUT < – 4V 100 — — mA FOSC Oscillator Frequency Pin 7 open; Pin 1 open or GND — 10 — kHz Pin 1 = V+ —9 0— IOSC Input Current Pin 1 open — +1.1 — µA Pin 1 = V+ — +5— PEFF Power Efficiency (Note 4) R L = 1 kΩ connected between V+ & VOUT 96 98 — % R L = 500Ω connected between VOUT & GND 92 96 — IL = 100mA to GND — 88 — VOUT EFF Voltage Conversion Efficiency RL = ∞ 99 99.9 — % NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to "power up" of the TC660. 2. Derate linearly above 50°C by 5.5 mW/°C. 3. To prevent damaging the device, do not short VOUT to V+. 4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2. ABSOLUTE MAXIMUM RATINGS* LV, FC, OSC Input OUT – 0.3V to (V+ +0.3V) Output Short Duration (VSUPPLY ≤ 5.5V) (Note 3) .. 10 Sec Power Dissipation (Note 2) (TA ≤ 70°C) Operating Temperature Range *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TC660 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
4-7TELCOM SEMICONDUCTOR, INC. TYPICAL CHARACTERISTICS All curves are generated using the test circuit of Figure 1 with V+ = 5V, LV = GND, FC = open, and TA = +25°C, unless otherwise noted. Supply Current vs. Supply Voltage Output Voltage Drop vs. Load Current Output Source Resistance vs. Supply Voltage 7) Output Source Resistance vs. Temperature 8) Oscillator Frequency vs. Supply Voltage Output Voltage vs. Oscillator Frequency 5) Efficiency vs. Oscillator Frequency 2) 3) Supply Current vs. Oscillator Frequency Efficiency vs. Load Current SUPPLY CURRENT ( µA) SUPPLY CURRENT ( µA) SUPPLY VOLTAGE (V) LOAD CURRENT (mA)OSCILLATOR FREQUENCY (kHz) EFFICIENCY (%) OUTPUT VOLTAGE DROP FROM SUPPLY VOLTAGE (V) OUTPUT SOURCE RESISTANCE ( Ω ) SUPPLY VOLTAGE (V) 100 60 04 0 20 100 8060 600 300 400 500 100 200 10,000 1000 100 10.01 0.1 1 10 100 LV = GND LV = OPEN DOUBLER MODE LV = OUT INVERTING MODE DOUBLER MODE TEMPERATURE ( °C) OUTPUT SOURCE RESISTANCE ( Ω ) 0 20 40-20-40 8060 100 SUPPLY VOLTAGE (V) OSCILLATOR FREQUENCY (kHz) OUTPUT VOLTAGE (V) OSCILLATOR FREQUENCY (kHz) OSCILLATOR FREQUENCY (kHz) POWER EFFICIENCY (%) V+ = 5.5V V+ = 2.5V V+ = 1.5V LOAD CURRENT (mA) 2.0 1.6 1.2 0.8 0.4 0 04 0 20 100 8060 V+ = 5.5V V+ = 3.5V V+ = 4.5V V+ = 2.5V V+ = 1.5V -5.0 -4.0 -4.5 -3.5 -3.0 0.1 0.2 0.4 1 4 10 20 402 100 100 0.1 0.2 0.4 1 4 10 20 402 100 ILOAD = 10mA ILOAD = 10mA ILOAD = 1mA LV GROUNDED FC = OPEN, OSC = OPEN LV OPEN ILOAD = 1mA ILOAD = 80mA ILOAD = 80mA V+ = 1.5VDC V+ = 3VDC V+ = 5VDC TC660 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
4-8 TELCOM SEMICONDUCTOR, INC. TC660 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER TYPICAL CHARACTERISTICS (Cont.) Oscillator Frequency vs. External Capacitance 13) 11) 12) Oscillator Frequency vs. Temperature Oscillator Frequency vs. Temperature OSCILATOR FREQUENCY (kHz) TEMPERATURE ( °C)TEMPERATURE ( °C) OSCILLATOR FREQENCY (kHz) OSCILLATOR FREQUENCY (kHz) 100 -40 20 40-20 0 10060 80 CAPACITANCE (pF) 100 0.1 0.01125 2 0 10 10000 2000100 500 FC = V+ FC = OPEN Oscillator Frequency vs. Supply Voltage 10) SUPPLY VOLTAGE (V) OSCILLATOR FREQUENCY (kHz) 100 LV GROUNDED FC = V+, OSC = OPEN LV OPEN FC = V+, OSC = OPEN TC7660 and TC660 Output Voltage and Power Efficiency vs. Load Current, V+ = 5V 14)OUTPUT VOLTAGE (V) LOAD CURRENT (mA ) -3.0 -3.4 -3.8 -4.2 -4.6 -5.0 0 2.0 6040 100 80 100 TC660 TC7660 EFF VOUT TC7660 TC660 POWER EFFICIENCY (%) 0 20 40-20-40 8060 100 FC= OPEN, OSC = OPEN PIN DESCRIPTION Pin No. Symbol Description 1 FC Internal Oscillator frequency control. f ≈ 10 kHz when FC ≈ OPEN; ≈ 90 kHz when FC = V+. FC has no effect if OSC is overdriven.
2 CAP + External capacitor, + terminal
3 GND Power-Supply Ground (Inverter) or Positive Input (Doubler)
4 CAP – External capacitor, – terminal
5V OUT Negative Voltage output (Inverter) or Ground (Doubler) 6 LV "Low-Voltage" pin. Connect to GND Pin for inverter operation when V IN < 3V; leave open or GND above 3V. When overdriving OSC, connect to GND. 7 OSC For external control of internal OSC. Connect ext. C from OSC to GND (close to pkg.) to reduce frequency of oscillator 8V + Positive Voltage Input (Inverter) or Output (Doubler)