TC53257P TOSHIBA | Alldatasheet
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Technical content
256K BIT (32K WORD X 8 BIT) CMOS MASK ROM 7053257P SILICON GATE MOS 7053257F
DESCRIPTION
The TC5325/7P/F is a 262,144 bit read only tery operation 13 required memory organized as 32,768 words by 8 bits with a The TC53257P/F has one programmable chip low bit cost, this being suitable for use in program enable input CE/CE. for device selection and one memory of microprocessor, and in character gener- output enable input (OE) for fast memory access and ator, The TC53257P/F using CMOS technology 1s output control most suitable for low power applications where bat
FEATURES
© Single 5V Power Supply @ Programmable Chip Enable © Access Time: 200ns(Max) @ All Inputs and Outputs : TTL Compatible © Power Dissipation @ Three State Outputs Operating Current : 25mA(Max) @ Package Standby Current 20pA{Max.) Plastic DIP: TC53257P @ Pin Compatible with 256K EPROM TC57256AD/ADI Plastic FP: TC53257F © Pin Compatible with 256K OTPROM TC54256AP/AF © Full Static Operation PIN CONNECTION = (TOP VIEW) BLOCK DIAGRAM xe qi 2p yp Ypp GND ai G2 27 aia
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cnn Gua 5B 03 As © Aso) PIN NAMES aso # { noo E Ao~Are | Address Inputs ] ATO © g i Aer Aut neo 4 2 “Do~Or | Data Outputs hols 8 sea <a NC t No connection Ro 8 ey FA owenoar'ceus CECE | Chvp enable nput Aue 2 : OF F Outout enable mput peu [voo | Power supply ! ane {GND ™ Ground -— J3 -
SYMBOL | _ TEM RATING UNITS | Voo____|_Power Supply Voltage =0.5-7.0 | vd Vm ____{ InputVoltiage =0.8~7 0 v | Yow __}_Sutout Voltage a - i | Vv) pe | Power Dissipation [0.6 {ow Ts ____| Storage Temperature 008 TBO cd [om ]“Operauna Temperature = 40=85 E |_Tsouoen__|_ Soldering Temperature-Time 260710 | ‘C-sec_| Note : *Plastic FP D. C. OPERATING CONDITINS (Ta= —40~85°C) SvuBOL PaRaMETER [win [ea Yoo Peer Supp Vorase ee vn input High Votage [a2 [vero Input Low Voltage [=03 [= [oe Tv D. C. and OPERATING CHARACTERISTICS (Ta=—40~85°C. Voo=5V+ 10%) Output Leakage Current CE=Vin oF OE = Vin $5.0) yA Vour=0V~Voo | [ ton | Output High Current [Vous2av ao = ma | loos: | Standby Current CE=Vim_CE=Vin 2) ma | toosz | Standby Current CE=Voo-0.2V, CE=0.2V 20 | uA | too: | Vin=Vow we. teveue =200ns 40 | ma Operating Current [ 10002 _| Viw=Voo~0.2V-02V, tevere=200ns | — | 2 CAPACITANCE [S¥mBot PARAMETER CONDITIONS MiN. | MAX. | UNIT ew Input Capacitance f= MHz, Ta=25C 8 | pF [Cou | Output Capacitance (= 1M, Ta=26C Note: This parameter is periodically sampled and 1s not 100% tested — 4 —- is ——
A. C. CHARACTERISTICS (Ta= —40~85'C, Voo=5V+ 10%) Gye Tre 200 [nce pawestme CS = 200 Ts Chip Enable Access Time from CE/CE = ns Troe | Output Enable Access Time from OF [ =| 70 |" 1s Output Disable Time from CE/CE, OF To | 60 | 1s | Hor [Ouputtoidtime SC A.C. TEST CONDITIONS Output Load 1OOpF +1 TTL Input Levels 0.6V, 2.4V Timing Measurement Reference Levels Input: 0.8V. 2.2V Output: 0.8V. 2.2V Input Rise and Fall Time 5ns TIMING WAVEFORMS ‘eve tCED « C_\\ i oe Loe] foe) OPERATION MODE =H: Vm. LV # © Vinor Vic [Mo0e [ce fon Ouibus [eas ui Output Deselect f+ ——_— High-Z l HL * Fk Standby — 5
@ Plastic DIP Vat: 27% BB BAD ww YS : | . i E Wp 3 ¢ 5 8 7 8 9 10 213 14 ssaenp 3TAMAX, Ue (—_ar UU UU Ee 2B | oaks z I4MAX.
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NOTE : Each lead pitch is 2.54mm. All leads are located within 0.25mm of their true longitudinal position with respect to No.1 and No. 28 leads @ Plastic FP eon PHONY OYA DAA | P Z . 3 IOUT TU 1272008 ox2s01 gl ccaciaaaiaaae P45 SSSA ata 1s04 53 118703 Sha NOTE : Each lead pitch is 1.27mm All leads are located within 0. 12mm of their true longitudinal position with respect to No.1 and No.28 leads — s6 a are oo