TC531000AP TOSHIBA | Alldatasheet

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Technical content

1M BIT (128K WORD8 BIT) CMOS MASK ROM 1m Br (128K WORD> TC531000AP,TC531000AF

DESCRIPTION

The TC531000AP/AF is a 1,04,575 bits read only suitable for low power applications where battery opera memory organized as 131,072 words by 8 bits with a low tion are required bit cost, thus being suitable for use in program memory __The TC531000AP/AF has one chip enable input of microprocessor, especially character generator. The CE/CE, programmable for device selection TCS31000AP/AF using CMOS techrology is most

FEATURES

© Single 5V Power Supply © Three State Outputs © Access Time: 150ns (Max.) © Fully Static Operation © Power Dissipation © Programmable Chip Enable Operating Current: 40mA (Max.) © Package Standby Current: 204A (Max.) Plastic DIP: TC531000AP © Ail Inputs and Outputs: TTL Compatible Plastic FP: TC531000AF PIN CONNECTION wa ¥ ais Gi 26P Vp BLOCK DIAGRAM ae Ge arbre ards 26pars aes 2opas Vpp GND DO D1 D2 D3 De Ds Dé D7 ass ~ zapao 73 9999900 0 aoe espa asG7 Rap ale EoD OUTPUT BUFFERS acs 2p aio age § 20pcecx sogio & shor 400 po qua iepps alo pi que a7B ps 420 onp Gis aspps AGO PIN NAMES — a5o ee aco fi [ao~ aie Address Inputs | aro fe DO~D7 Data Outputs Ago] 8 |= 4 A904 @ [Cece Chip Enable input noo] § 7 {Yoo | Power Supply | Allo 3 FA ([6no Ground Alz 0 8 151072 x 8 SO, 1 Sound A130 BE> Also a MEMORY CELLES A150 5 A160 —803—

TC531000AP,TC531000AF MAXIMUM RATINGS “Voo | Power Supply Voltase — | -05~+7.0 v Vin | Input Voltage =08~Voo v. [Your Output Voltage 0~Voo Jv Pp Power Dissipation 1.0/0.6" Ww Torr | Operating Temperature __ 40+ 70 el TsoipeR | Soldering Temperature + Time 260° 19 °C + sec Note: * Plastic FP D.C. OPERATING CONDITIONS (Ta = —40 ~ 70°C) SYMBOL __ranaweren min. [tye | max. | unit | Vow __|_Power Supply Voltage 45 | 60 _ 55 v Vin Input High Voltage 22 = Vop + 0.3 v Vit _|_Input Low Voltage 7 -03) = 08 v D.C. and OPERATING CHARACTERISTICS (Ta = —40 ~ 70°C, Vpn = SV + 10%) [symBot PARAMETER —conpITIONS | MIN. | MAX. [UNIT mr Input Leakage Current Vin=0~Voo | 210 | HA lo Output Leakage Current CE = Vin. VouT= 0~ Von = 25.0 uA Lo __| Output Leakage Current aL Di i ee Ton Output High Current Vou= 2.4V =1.0 = mA Tou Output Low Curent Vou = 0.4V 3.2 = mA Ippst Standby Current a CE = Vin _ = 2 mA '!ops2 Standby Current CE = Vopand Vin = OV (Vp) - 20 BA Sopot Operating Current Vin =Vin Mics teyere = 150ns_ | — | 50 'p002 peeuns Vin = Vop/0V, teyele = 150ns 40 CAPACITANCE Cin Input Capacitance __ | te Mie, Te= 25°C = 10 | PF Cour __| Output Capacitance _ | fe iMHe Tas 26" | | | Note: This parameter is periodically sampled and is not 100% tested. ~804—~

TC531000AP,TC531000AF A.C. CHARACTERISTICS (Vop= 5V 4 5V + 10%, Ta = —40 ~ 70°C) [symeo. [PARAMETER =| MIN. | MAX. | UNIT. | tere Cycle Time 150 = ns tacc Access Time — | 150 ns -| |_tce___|_ Chip Enable Access Time = 150 ns “tcep | Output Disable Time =| 60 ns | ton Output Hold Time 10 = ns AC TEST CONDITIONS @ Output Load : 100pF + 1TTL © Input Levels 0.6V, 2.4V @ Timing Measurement Reference _evels Inout : 0.8V,2.2V Output: O0.8V,2.0V @ Input Rise and Fall Time Sns TIMING WAVEFORMS texe A0~A16 Valia Y ———— taco cE CE/cE cE ( 808. | | ton} [torn KKK OXY Pour WAR Vat hy OPERATION MODE ____ MODE cece) | A0~ 16 Outputs ~ Power _ Read L(H) Valid Data Out Operating Output Deselect _ H(L) _ tt _High-Z _Standby HV. be Vin 8 Vig or Vie —805—

TC531000AP,TC531 000AF ® OUTLINE DRAWINGS Plastic DIP 28 1s pl - a 1 Te a) Ir 1 p= i \\ { | a yg te i 2 | as tars ase ta2s of ese 008 i § eee NOTE: Each lead pitch is 2.54mm Alll leads are located within 0.25mm of their true longitudinal pasiti-7 with respect to No. 1 and No. 28 leads. Plastic FP 28 1s 1 va . -— ae o 118 £03 043 £02 1274005 3g 15+04 _ 3 s NOTE: Each lead pitch is 1.27mm All leads are located within 0.25mm of their true longitudinal position with respect to No. 1 and No, 28 leads. NOTE: Toshiba does not assume any responsibility for use of any circuitry described; no circuit patent licenses are imolied, and Toshiba reserve the right, at any time without notice, to change said circuitry. —806~