TC511402ASJ-60

TC514402AP TOSHIBA | Alldatasheet

Document overview

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Technical content

1048,576 WORL’ x 4 BIT DYNAMIC RAM * This is advanced information and specifica- tions are subject to change without notice.

DESCRIPTION

The TOSI4402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC514402AP/AJ/ASJ/AZ to be packaged in a standard 20 pin plastic DIP, 26/20 pin plastic SOJ (300/350mil) and 20 pin plastic ZIP. The package size provides high system bit’ densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V+10% tolerance, direct interfacing capability with high performace logic families such as Schottky TTL.

FEATURES

@ 1,048,576 word by 4 bit organization © Single power supply of 5V+10% © Fast access time and cycle time vith g builtin Vpp generator ow Power ~ TCS )4402AP/AM/ASJ/ AZ - 60 660mW MAX. Operating trac RAS Access Time 60ns (DC514402AP/AM/AS //AZ—60) Taa Column Address Access Ti 30n 5.5mW MAX. Standby a——————ee—=es 3008 © Output unlatched at cycle end allows Scac C5 Access Time 20s two-dimensional chip selection _ tec_Cycle Time 140ns @ Read-Modify-Write, CS before RAS isc Static Column Mode refresh, RAS only refresh, Hidden Cycle Time 35ns refresh, Static Column Mode and Test Mode capability @ Allinputs and outputs TTL Compatible PIN NAMES © 1024 refresh cycles/16ms © Package [Row Address Strobe _| zy - 514402AJ : SOQJ26-P-350 RAS Row Address Strobe | /O1~I/O4 | Data inpuvOutput TCE14402ASI : SOJ26-P-300A eS __[Chip select TC514402AZ : ZIPZ0-P-400A WRITE [Read/Write Input BLOCK DIAGRAM PIN CONNECTION (TOP VIEW) wor ug gauge Veo Mss J 4 vor fi a0hvss word? aebvss Of] 5 TE of) EU 4 wor (2 r9fvos vor tp ds pubs 35 Zl WRITE 9 rebvos WATE NS © 3ahvos WO3R2 Lo, oy o—>| Genenavon Rasa wes. «RAS 23S Vsslal Se ‘a | mere gts whor A945 HOE yoy f 3 {NON ona SB TW) SEER 209s 1sAB ag dy aeyae —pag hey 1 WATE aor (DY adittasito . Ary tupar 20%) SEHAS 2 iohas area| REPRE arte hae «= ALUN tehae aoa 8 Sido has Adie isBas ESS Uzlan A307] fof Vee io_tipias ec 4131s SR Gaal aa ator sah mH cepa fig] aa abo>| ESTER ==] memory ashti alae Sor | be SP) “ansay ANSE Bedee ABO [ aettte, RADE 1026] 1024 x 1024 ; x door| La odittntt J Mein] xa oo A-421

a ABSOLUTE MAXIMUM RATINGS fren vonee me re [Steig onseatrectne | Taxa [0010 | eee P| Prone swienin nee] mw [ser eet oun Gs | ee me | RECOMMENDED DC OPERATING CONDITIONS (Ta =0~70°c) ee [vc [spy vines as [ef [vm [pat in vatoge ae f= es Pe [iret vote nee A-422

DC ELECTRICAL CHARACTERISTICS (Vcc = 5V + 10%, Ta= 0~70°c) OPERATING CURRENT lecy | Average Power Supply Operating Current rcs 144o2APvAWas.uAZ-60 120 (RAS, GS, Address Cycling: tec= tac MIN.) STANDBY CURRENT cca | Power Supply Standby Current mA (RAS = CS = Vin) RAS ONLY REFRESH CURRENT lees. | Average Power Supply Current, RAS Only Mode —_[rcstasozaprawasvaz-6o (RAS Cycling, G=Vin: tac= tac MIN.) STATIC COLUMN MODE CURRENT Average Power Supply Current, STATICCOLUMN —_{Tcs14eo2ap/avasuAz-60 Kca | Mode (RAS =CS= Vu, Address Cycling: tsc=ts¢ MIN.) STANDBY CURRENT lees | Power Supply Standby Current (RAS = GS = Vcc -0.2V) a G5 BEFORE RAS REFRESH CURRENT al lees | Average Power Supply Current, C5 Before RAS TCS 14402AP/A/ASJAZ-60 ae Mode (RAS, CS Cycling: tac = tac MIN.) INPUT LEAKAGE CURRENT liq | Input Leakage Current, any input 10 | pA (OVS Vin = 6.5V, All Other Pins Not Under Test + OV) OUTPUT LEAKAGE CURRENT low . pA (Dour is disabled, OVS VourS 5.5V) | output Lever Vou . v Output “H” Level Voltage (lout = - SMA) OUTPUT LEVEL Vou Vv Output “L” Level Voltage (lout = 4.2m) A-423

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Vcc =5V 10%, Ta =0~70°c) (Notes 6, 7, 8) i A eco SYMBOL PARAMETER unit | NoTES ame [ic | fandon Read or wate Gee Tne [8] > Jw |] [san [Restos wie ce Tine | 165 | = | [se [Sic coun Mode Gete Tine [35] = Static Column Mode Read-Modify-Write [emo |S fine me SHANNA [Tso PT fe ewer [| fT (Pe [ssa Ace Tine tor Gouna hades [=| ee fe | ‘Access Time from Last Write [= ss fas [one | [sou [Oust aut Tunotf bawy | 0} [| jue [rary een | eT Addres [ow [ouput Sun fable Tine fom WARE |__| PY [is [torsion metas na ot) | 3] Ps fe [we [eas recwgetine wo [as | AS ae was | a0 |] RAS Pulse Width (Static Column Mode) | 60 200,000 | ns |_| rn oa a [es [Se tS we | [es | Bre wis aes PY GS Pulse Width (Static Column Modey [20 «| _—200,000 | ms |_| ee a ce Lise [tw caver en Deore | sep [cw [10 WS reas nes [ie [Bretagne | PY . [ase [Row Adds seep Woe eo [en | tow aderes noi tine | a] = Ts |] [ese coun adi stp ne 0 [eer | eau aasrenrnata tine [se Column Address Hold Time referenced m [eieeaceae |e | [el , [ax coun Assen io DE nd Time | 90] | Column Address Hold Time referenced jw [Seger Pele | A-424

a Ss reece SYMBOL PARAMETER UNI NOTES Last Write to Column Address Delay [sme [renew Te Te [ols | Last Write to Column Address Hold jw [esorewns [s Te del | Read Command Set-up Time referenced a aed FE ee to Read Command Hold Time referenced jm _ [racers eT [|e | Write Command Hold Time [wo [ecco fe | [ele | [am [ wre Command ruse wok | [> |={ | [sr [ite connond-nacive tine | [= [|_| Linn | wie conan Stead ine |» | - tw | | Liem | wre commando tend Tne [9 | =P | | . Lice Retesh pied ee [ws _[imsememena | ot | > [se | (Output Data Disable) [ie [Msomoornmrcao | @ | - [={ | (READ-MODIFY-WRITE CYCLE) [swe _[fecwmncnenecss | | - [ae | (READ-MODIFY-WRITE Cycle) [iano | cotsnn Ader to WATE Osay Tne [| | - alo | [ier | sevup tine below) [sf i | [cm | Smad Times before aS) ——_—-|s | id | [ise [RAS w GS rectarge tine ‘| | j~ [enemoa = |» | - [ol] | . Counter Test Cycle) [isos [RAS nod Tine wieonea we | | = [at _| [io [Be Acewtine SSS i | fics BE Osta ony SST SP fd fox [Regeneron Tee [a fe | from OF A-425,

SSSSSSeSSSSsSSSSSSeSeeeeeeSSSSSSSSSEa Cs ee SYMBOL PARAMETER Notes ce [ies [wie Conant sap eo] ca Write Command Hold Time 10 | WRITE to RAS Precharge Time CC es [eam [WATE as noid Tne [ve A-426

a ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS IN THE TEST MODE (Vcc = 5V + 10%, Ta=0~70°c) (Notes 6, 7, 8) Cs ea SYMBOL PARAMETER [wn [MAK | UN! Lae [faniom Red or wate Gee me | ss] pw | | [se | stati cotmenege Geieine | | | w| _| fu memes | wf en kk [iss [acces Time from colinn Adare [=| as Pm | 38 | [ines [Ras rove wn Ss ome oe || [tec [RAS Pe Wien Gnie Catomn wads) | es | 20000 [|_| [in [Reno Fine | ts | Td [ew [ros tine ws P| CAPACITANCE (Vcc = 5V £ 10%, f= 1MHz, Ta=0~70°c) ace [-semeoe [ravameren | | mmx |uwt_| a [cs [nour copatance 05, ware, GH = | |r| [co [npuvouroutcopaciace wormvon | =| 7 |» | A-427

NOTES: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. 2, All voltages are referenced to Vss. 3. Icc1, Icca, Icc4, Icce depend on cycle rate. 4. Icc1, Icc4 depend on output loading. Specified values are obtained with the output open. 5. Column address can be changed once or less while RAS= Vi. 6. An initial pause of 200ps is required after power-up followed by 8 RAS only refresh cycles before proper device operation is achieved. In case of using internal refresh counter, a minimum of 8 CS before RAS refresh cycles instead of 8 RAS refresh cycles are required. 7. AC measurements assume tr=5ns. 8. Vin (min.) and Vii (max.) are reference levels for measuring timing of input signals. 9, Measured with a load equivalent to 2 TTL loads and 100pF. 10. torr (max.) and togz(max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 11, Either tpcH or trrH must be satisfied for a read cycle. 12. These parameters are referenced to CS leading edge in early write cycles and to WRITE leading edge in Read-Modify-Write cycles. 13. twos, twp, tcwp and tawp are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If twcs=twcs(min.), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance) through the entire cycle; If trwp= trwp (min.), tcwp2 town (min.) and tawp2=tawp (min.) the cycle is a Read-Modify-Write cycle and the data out will contain data read from the selected cell: If neither of the above sets of conditions is satisfied, the condition of the data out(at access time) is indeterminate. 14, Operation within the trcp (max.) limit insures that trac (max.)can be met. + trop (max.)is specified as a reference point only: If trop is greater than the specified trcp (max.) limit, then access time is controlled by tcac. 15. Operation within the trap (max.) limit insures that trac (max.)can be met. trap (max.) is specified as a reference point only: If trap is greater than the specified trap (max.) limit, then access time is controlled by taa. * 16. Operation within the thwap (max.) limit insures that taLw (max.) can be met. tLwap (max.) is specified as a reference point only: If trap is greater than the specified tuwap (max.) limit, then access time is controlled by taa. 17. tan is the condition to latch column address ewhen RAS has rised up. A-428

oye wa _ = A: “H" or “L" at WRITE CYCLE (EARLY WRITE: A: “Hor “L" A-429

WRITE CYCLE (OE CONTROLLED WRITE Vu 0s | | tan — Mt ee a A-430

STATIC COLUMN MODE WRITE CYCLE (EARLY WRITE) ero 4 cam in STATIC COLUMN MODE WRITE CYCLE (EARLY WRITE: yj «Nt = EET a 0 ee a ee

STATIC COLUMN MODE READ - MODIFY - WRITE CYCLE A-433

ope Eel TEL | wore Vet QE = XID ori@eie “H" of “L"

fois] BEFORE RAS REFRESH CYCLE vo1~vos a — OPEN Note: OH, AO~A9= “II” or “L” ZA: oe

HIDDEN REFRESH CYCLE (READ) *~albeate Se Le =e ee, ZA: “Ho *u"

«Wy. ZA: “Hon *u"

TES _ —-_ i READ cvcle tone | | tw ee Lee x i

Note: OF, AO~A9= “H” or “L” a. ee

TC514402AP/AJ/ASJ/AZ-70, TC514402AP/AJ/ASJ/AZ—80 TC514402AP/AJ/ASJ/AZ—10 ABSOLUTE MAXIMUM RATINGS a fowetvoge vg er [power sipy voige | veer fv | [opeaingrengeaure | tm | em |e | 9 [sage enpentre tg | esis [re [seingrengeourestine [tno | a0 [ewe [1 | Prone Outten fem [set rat onscreen RECOMMENDED DC OPERATING CONDITIONS (Ta =0~70°c) [ea [rae ome [me | ore | [ve [ew vaee ws | oe os Pw [ve [evi veins ae [| es [ve Lire tegen ee A-444

BLOCK DIAGRAM IN THE TEST MODE hoc Vee ho re) Normal 1c A test [|| Ac 8 7 a om) © + JNormat Aoc hoc Vcc ho re) Normal 1c c = aa Piss —— = om re) Normal aoc ad ‘S . 0 > Normal oC, E wo Normal Ea =) een Prete | oI ; a a) © Normal . aoc ofoc Vgc . © Normal OC G ~—| Normal Pee $0 m7 a a o Normal Aoc Fig. 1 A-442