TC4626EOE

TC4626 TELCOM | Alldatasheet

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Technical content

4-271TELCOM SEMICONDUCTOR, INC. TC4626 TC4627 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER

FEATURES

n Power driver with on Board Voltage Booster n Under-Voltage Circuitry n Below-Rail Input Protection

APPLICATIONS

n Raises 5V to drive higher-Vgs (ON) MOSFETs n Eliminates one system power supply GENERAL DESCRIPTION The TC4626/4627 are single CMOS high speed drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 volts. The internal voltage booster will produce a V BOOST potential up to 12 volts above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading require- ments. An internal undervoltage lockout circuit keeps the output in a low state when V BOOST drops below 7.8 volts. Output is enabled when VBOOST is above 11.3 volts. PIN CONFIGURATIONS IN OUT C1 + GND VBOOST NC IN C1 – NC C1 + NC NC VDDC1 – VDD 12C2 NC NC GND NC VBOOST NC OUT TC4626 TC4627 TC4626 TC4627 NOTE: Pin numbers correspond to 8-pin package

ORDERING INFORMATION

Part No. Package Temp. Range TC4626COE 16-Pin SOIC (Wide) – 55 °C to +125°C TC4626CPA 8-Pin Plastic DIP – 40 °C to +85°C TC4626EOE 16-Pin SOIC (Wide) – 40 °C to +85°C TC4626EPA 8-Pin Plastic DIP – 0 °C to +70°C TC4626MJA 8-Pin CerDIP – 0 °C to +70°C TC4627COE 16-Pin SOIC (Wide) – 55 °C to +125°C TC4627CPA 8-Pin Plastic DIP – 40 °C to +85°C TC4627EOE 16-Pin SOIC (Wide) – 40 °C to +85°C TC4627EPA 8-Pin Plastic DIP – 0 °C to +70°C TC4627MJA 8-Pin CerDIP – 0 °C to +70°C VOLTAGE BOOSTER CLOCK C1+ C1- IN GND EXT OUTPUT VBOOST EXT V = 2 x VDD VDD C 3 NON- INVERTING 4627 INVERTING 4626 (UNREGULATED 3 x V DD ) UV LOCK C 2 EXT C 1 FUNCTIONAL BLOCK DIAGRAM TC4626/7-7 10/21/96 8-Pin Plastic DIP /CerDIP 16-Pin SOIC (Wide)

4-272 TELCOM SEMICONDUCTOR, INC. TC4626 TC4627 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER ABSOLUTE MAXIMUM RATINGS Package Power Dissipation (TA ≤ 70°C) Derating Factor S + 0.3V to GND – 0.3V ELECTRICAL CHARACTERISTICS: TA = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Driver Input VIH Logic 1, Input Voltage 2.4 — — V VIL Logic 0, Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDRIVE – 1 — 1 µA Driver Output VOH High Output Voltage V BOOST – 0.025 — — V VOL Low Output Voltage — — 0.025 V R O Output Resistance, High I OUT = 10 mA, VDD = 5V — 10 15 Ω R O Output Resistance, Low I OUT = 10 mA, VDD = 5V — 8 10 Ω IPK Peak Output Current — 1.5 — A Switching Time tR Rise Time Test Figure 1,2 — 33 40 nsec tF Fall Time Test Figure 1,2 — 27 35 nsec tD1 Delay Time Test Figure 1,2 — 35 45 nsec tD2 Delay Time Test Figure 1,2 — 45 55 nsec FMAX Maximum Switching Frequency Test Figure 1 1.0 — — MHz VDD = 5V, VBOOST > 8.5V Voltage Booster R 3 Voltage Tripler Output I L = 10 mA, VDD = 5V — 300 400 Ω Source Resistance R 2 Voltage Doubler Output — 120 200 Ω Source Resistance FOSC Oscillator Frequency 12 — 28 kHz VOSC Oscillator Amplitude R LOAD = 10kΩ 4.5 — 10 V Measured at C1- UV Undervoltage Threshold 7.0 7.8 8.5 V @ V BOOST VSTART Start Up Voltage 10.5 11.3 12 V @ V BOOST VBOOST @V DD = 5V No Load 14.6 — — V Power Supply IDD Power Supply Current V IN = LOW or HIGH — — 2.5 mA VDD Supply Voltage 4.0 — 6.0 V

4-273TELCOM SEMICONDUCTOR, INC. Symbol Parameter Test Conditions Min Typ Max Unit Driver Input VIH Logic 1, Input Voltage 2.4 — — V VIL Logic 0, Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VBOOST – 10 — 10 µA Driver Output VOH High Output Voltage V DRIVE – 0.025 — — V VOL Low Output Voltage — — 0.025 V R O Output Resistance, High I OUT = 10 mA, VDD = 5V C & E Version (TA = 70°C or 85°C) — 15 20 Ω M Version (TA = 125°C) — 15 25 R O Output Resistance, Low I OUT = 10 mA, VDD = 5V C & E Version (TA = 70°C or 85°C) — 10 13 Ω M Version (TA = 125°C) — 10 15 IPK Peak Output Current — 1.5 — A Switching Time tR Rise Time Test Figure 1,2 — — 55 nsec tF Fall Time Test Figure 1,2 — — 50 nsec tD1 Delay Time Test Figure 1,2 — — 60 nsec tD2 Delay Time Test Figure 1,2 — — 70 nsec FMAX Maximum Switching Frequency Test Figure 1 750 — — kHz VDD = 5V, VBOOST > 8.5V Voltage Booster R 3 Voltage Boost Output I L = 10 mA, VDD = 5V — 400 500 Ω Source Resistance R 2 Voltage Doubler Output — 170 300 Ω Source Resistance FOSC Oscillator Frequency 5 — 50 kHz VOSC Oscillator Amplitude R LOAD = 10kΩ 4.5 — 10 V Measured at C1- UV Undervoltage Threshold 7.0 7.8 8.5 V @ V BOOST VSTART Start Up Voltage 10.5 11.3 12 V @ V BOOST VBOOST @V DD = 5V No Load 14.6 — — V Power Supply IDD Power Supply Current V IN = LOW or HIGH — — 4 mA VDD Supply Voltage 4.0 — 6.0 V POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.

4-275TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 The voltage booster is an unregulated voltage tripler circuit. The tripler consists of three sets of internal switches and three external capacitors. S1a and S1b charge capaci- tor C1 to V DD potential. S2a and S2b add C1 potential to VDD input to charge C2 to 2 x VDD . S3a and S3b add C1 potential to C2 to charge C3 to 3 x VDD . The position of the switches is controlled by the internal 4 phase clock. (4 To 6V) S1a S1b GND S2a S2b 2 x VDD 3 x VDD , VBOOST S3b S3a VDD Voltage Booster Position of Switches PIN 2 VOLTAGE PIN 1 VOLTAGE 3 x VDD 2 x VDD VDD 2 x VDD VDD ON OFF ON OFF ON OFF BOOSTER FUNCTION Pin 1 & 2 Waveforms

4-276 TELCOM SEMICONDUCTOR, INC. TC4626 TC4627 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TYPICAL CHARACTERISTICS VOUT Hi (Volts) VOUT Hi (Volts) TC4626 VOH vs. Frequency VS = 5V, Temperature = –55°C TC4626 VOH vs. Frequency VS = 5V, Temperature = 25°C 5 500 1,000 1,500 2,000 2,500 3,000 3,500 10 500 1,000 1,500 2,000 2,500 3,000 3,500 FREQUENCY (kHz) FREQUENCY (kHz) Time (nsec) -40 -20 0 20 40 60 80 Delay Time vs. Temperature VS = 5V, CLOAD = 1000 pF 100 TD2 TR TEMPERATURE ( °C) Delay Time vs. Temperature VS = 6V, CLOAD = 1000 pF TEMPERATURE ( °C) 120 Time (nsec) -40 -20 0 20 40 60 80 TD1 100 TD2 TR 120 TD1 470pF 2200pF 1000pF 470pF 2200pF 1000pF FREQUENCY (kHz) Time (nsec) -40 -20 0 20 40 60 80 100 TC4626 VOH vs. Frequency VS = 5V, Temperature = 125°C Delay Time vs. Temperature VS = 4V, CLOAD = 1000pF 1005 500 1,000 1,500 2,000 2,500 3,000 3,500 TR TEMPERATURE ( °C) 470pF 2200pF 1000pF 120 TF TF TF TD1 TD2 VOUT Hi (Volts) Input = 0-5V; TR & TF <10nsec; @ <20 kHz Input = 0-5V; TR & TF <10nsec; @ <20 kHz Input = 0-5V; TR & TF <10nsec; @ <20 kHz

4-277TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 TYPICAL CHARACTERISTICS (Cont.) VOUT HI (Volts) 1 2 34 567 TC4626 VOH vs. Frequency VS = 5V, Temperature = 25°C FREQUENCY x 100 kHz 9 100 2,200 pF 470 pF 1,000 pF VOUT HI (Volts) 1 2 34 567 TC4626 VOH vs. Frequency VS = 5V, Temperature = -55°C FREQUENCY x 100 kHz 9 100 2,200 pF 470 pF 1,000 pF VOUT HI (Volts) 1 2 34 567 TC4626 VOH vs. Frequency VS = 5V, Temperature = 125°C FREQUENCY x 100 kHz 9 100 470 pF 2,200 pF 1,000 pF