TC4421

TC4421 TELCOM | Alldatasheet

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Technical content

4-231TELCOM SEMICONDUCTOR, INC. PIN CONFIGURATIONS INPUT GND GND OUTPUT VDD Tab is Common to V DD NOTE: OUTPUT GND TC4421 TC4422 TC4421 TC4422 VDD INPUT NC GND VDD OUTPUT Duplicate pins must both be connected for proper operation. NC = No connection both OUTPUT INPUT GND EFFECTIVE INPUT C 25 pF V 300 mV DD TC4421/TC4422 Inverting/Noninverting 4.7V INVERTING NONINVERTING

FEATURES

n Tough CMOS ™ Construction n Fast Rise and Fall Times: — 30 nsec with 4,700 pF Load — 180 nsec with 47,000 pF Load GENERAL DESCRIPTION The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation — they can- not be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addi- tion, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. TC4421/2-7 -1018/96 TC4421 TC4422

ORDERING INFORMATION

Part No. Package Temperature Range TC4421CAT 5-Pin TO-220 0 °C to +70°C TC4421CPA 8-Pin PDIP 0 °C to +70°C TC4421EPA 8-Pin PDIP – 40 °C to +85°C TC4421MJA 8-Pin CerDIP – 55 °C to+125°C TC4422CAT 5-Pin TO-220 0 °C to +70°C TC4422CPA 8-Pin PDIP 0 °C to +70°C TC4422EPA 8-Pin PDIP – 40 °C to +85°C TC4422MJA 8-Pin CerDIP – 55 °C to+125°C FUNCTIONAL BLOCK DIAGRAM 9A HIGH-SPEED MOSFET DRIVERS

APPLICATIONS

n Line Drivers for Extra-Heavily-Loaded Lines n Pulse Generators n Driving the Largest MOSFETs and IGBTs n Local Power ON/OFF Switch n Motor and Solenoid Driver 5-Pin TO-220 8-Pin Plastic DIP/CerDIP

4-232 TELCOM SEMICONDUCTOR, INC. 9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4422 ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 Input Voltage 2.4 1.8 — V VIL Logic 0 Input Voltage — 1.3 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage See Figure 1 V DD – 0.025 — — V VOL Low Output Voltage See Figure 1 — — 0.025 V R O Output Resistance, High VDD = 18V, IO = 10 mA — 1.4 — Ω R O Output Resistance, Low V DD = 18V, IO = 10 mA — 0.9 1.7 Ω IPK Peak Output Current V DD = 18V — 9 — A IDC Continuous Output Current 10V ≤ VDD ≤ 18V, TC = 25° 2A (TC4421/22 CAT only) IREV Latch-Up Protection Duty Cycle ≤ 2% >1500 — — mA Withstand Reverse Current t ≤ 300 µsec Switching Time (Note 1) tR Rise Time Figure 1, C L = 10,000 pF — 60 75 nsec tF Fall Time Figure 1, C L = 10,000 pF — 60 75 nsec tD1 Delay Time Figure 1 — 30 60 nsec tD2 Delay Time Figure 1 — 33 60 nsec Power Supply IS Power Supply Current V IN = 3V — 0.2 1.5 mA VIN = 0V — 55 150 µA VDD Operating Input Voltage 4.5 — 18 V Input VIH Logic 1 Input Voltage 2.4 — — V VIL Logic 0 Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA ABSOLUTE MAXIMUM RATINGS* Power Dissipation, TA ≤ 70°C Power Dissipation, T A ≤ 70°C Derating Factors (To Ambient) Thermal Impedance (To Case) Operating Temperature (Ambient) DD + 0.3V) to (GND - 5V) *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

4-233TELCOM SEMICONDUCTOR, INC. ≤ 18V unless otherwise specified. Figure 1. Switching Time Test Circuit NOTE: 1. Switching times guaranteed by design.

4-234 TELCOM SEMICONDUCTOR, INC. TC4421 TC4422 9A HIGH SPEED MOSFET DRIVERS TYPICAL CHARACTERISTICS 220 200 180 160 140 120 100 468 1 0 1 2 14 16 18 Rise Time vs. Supply Voltage V DD 1000 pF 4700 pF 10,000 pF 22,000 pF 15V 300 250 200 150 100 Rise TIme vs. Capacitive Load 100 1000 10,000 100,000 10V Rise and Fall Times vs. Temperature tRISE tFALL –40 0 40 80 120 (°C) 81 01 2 1 41 61 84 TIME (nsec) VDD Propagation Delay vs. Supply Voltage tD2 tD1 C = 1000 pFLOAD 180 160 140 120 100 4 6 8 1 01 21 41 61 8 Fall Time vs. Supply Voltage V DD 1000 pF 4700 pF 10,000 pF 22,000 pF 300 250 200 150 100 Fall TIme vs. Capacitive Load 100 1000 10,000 10V 15V tRISE (nsec)tRISE (nsec) tFALL (nsec) tFALL (nsec) C LOAD (pF) C LOAD (pF) = 10,000 pFLOAD V = 15VDD C TIME (nsec) TA 100,000

4-235TELCOM SEMICONDUCTOR, INC. TC4421 TC4422 9A HIGH SPEED MOSFET DRIVERS TYPICAL CHARACTERISTICS (Cont.) C (pF) 220 Supply Current vs. Capacitive Load LOAD 100 200 180 160 140 120 100 100,00010,0001000

1.125 MHz

2 MHz

I (mA)SUPPLY 63.2 kHz (V = 18V)DD FREQUENCY (kHz) 180 100 Supply Current vs. Frequency 120 140 160 0.1 µF 22,000 pF 470 pF 10,000 pF 4700 pF I (mA)SUPPLY 180 160 140 120 100 C (pF)LOAD I (mA)SUPPLY 1.125 MHz 63.2 kHz 20 kHz 632 kHz 200 kHz Supply Current vs. Capacitive Load, (V = 12)DD 100 Supply Current vs. Capacitive Load C (pF)LOAD 20 kHz 632 kHz 200 kHz 63.2 kHz I (mA)SUPPLY (V = 6V)DD 47,000 pF 120 100 0.1 µF 4700 pF FREQUENCY (kHz) 100 1000 22,000 pF 470 pF 10,000 pF I (mA)SUPPLY FREQUENCY (kHz) I (mA) 180SUPPLY 100 Supply Current vs. Frequency 120 140 160 0.1 µF 470 pF 22,000 pF 10 100 1000 4700 pF 10,000 pF 47,000 pF (V = 18V)DD (V = 12)DD Supply Current vs. Frequency (V = 6V)DD 100 100,000 10,0001000 100 100,000 10,0001000 10 100 1000 10 100 1000 47,000 pF

4-236 TELCOM SEMICONDUCTOR, INC. TYPICAL CHARACTERISTICS (Cont.) 120 TIME (nsec) 110 100 123456789 1 0 Propagation Delay vs. Input Amplitude VDD = 10V C LOAD = 10000V tD2 tD1 INPUT (V) –40 –20 0 20 40 60 80 100 120–60 TIME (nsec) Propagation Delay vs. Temperature tD2 tD1 103 102 –40 –20 0 20 40 60 80 100 120–60 I (µA)QUIESCENT T (°C) J Quiescent Supply Current vs. Temperature V = 18VDD 4 6 8 1 01 21 41 61 8 High-State Output Resistance vs. Supply Voltage R ( )DS(ON) Ω V (V)DD TJ = 150° C TJ = 25° C DD 4 6 8 1 01 21 41 61 8 V (V) Low-State Output Resistance vs. Supply Voltage TJ = 150°C TJ = 25°C Crossover Energy vs. Supply Voltage 10A•sec10 DD NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. 10 –8 4681 0 1 2 1 4 1 6 1 8 V INPUT = 1 INPUT = 0 5.5 4.5 3.5 2.5 1.5 0.5 5.5 4.5 3.5 2.5 1.5 0.5 R ( )DS(ON) Ω T (°C)A TC4421 TC4422 9A HIGH SPEED MOSFET DRIVERS