TC4420 TELCOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

4-225TELCOM SEMICONDUCTOR, INC. TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS

ORDERING INFORMATION

Temp. Part No. Logic Package Range TC4420CAT Noninverting 5-Pin TO-220 0 °C to +70°C TC4420COA Noninverting 8-Pin SOIC 0 °C to +70°C TC4420CPA Noninverting 8-Pin PDIP 0 °C to +70°C TC4420EOA Noninverting 8-Pin SOIC – 40 °C to +85°C TC4420EPA Noninverting 8-Pin PDIP – 40 °C to +85°C TC4420IJA Noninverting 8-Pin CerDIP –25 °C to +85°C TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C TC4429CAT Inverting 5-Pin TO-220 0 °C to +70°C TC4429COA Inverting 8-Pin SOIC 0 °C to +70°C TC4429CPA Inverting 8-Pin PDIP 0 °C to +70°C TC4429EOA Inverting 8-Pin SOIC – 40 °C to +85°C TC4429EPA Inverting 8-Pin PDIP – 40 °C to +85°C TC4429IJA Inverting 8-Pin CerDIP – 25 °C to +85°C TC4429MJA Inverting 8-Pin CerDIP – 55 °C to +125°C

FEATURES

n Logic Input Will Withstand Negative Swing Up to 5V n Low Supply Current With Logic "1" Input ... 450µA n Output Voltage Swing to Within 25mV of Ground or VDD

APPLICATIONS

n Switch-Mode Power Supplies n Motor Controls n Pulse Transformer Driver n Class D Switching Amplifiers Tab is Connected to VDD 8-Pin DIPTO-220-5 TC4420 TC4429 8-Pin SOIC NOTE: Duplicate pins must both be connected for proper operation. INPUT GND VDD GND OUTPUT GNDGND NC INPUT VDD OUTPUT OUTPUT VDD 18 GNDGND NC INPUT VDD OUTPUT OUTPUT VDD TC4420 TC4429 TC4420 TC4429 500 µA OUTPUT INPUT GND EFFECTIVE INPUT C = 38 pF VDD 300 mV TC4429 TC44204.7V TC4420/9-6 10/18/96 GENERAL DESCRIPTION The TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as V DD + 0.3V or as low as – 5V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.) and the output rise and fall times are only 25nsec (typ.) into 2500pF across the usable power supply range. Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete compo- nents saving PCB area, parts and improving overall system reliability. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS

4-226 TELCOM SEMICONDUCTOR, INC. 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429 ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 1.8 — V VIL Logic 0 Low Input Voltage — 1.3 0.8 V VIN (Max) Input Voltage Range –5 — V DD +0.3 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage See Figure 1 V DD – 0.025 — — V VOL Low Output Voltage See Figure 1 — — 0.025 V R O Output Resistance, High I OUT = 10 mA, VDD = 18V — 2.1 2.8 Ω R O Output Resistance, Low I OUT = 10 mA, VDD = 18V — 1.5 2.5 Ω IPK Peak Output Current V DD = 18V (See Figure 5) — 6 — A IREV Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A Withstand Reverse Current t ≤ 300 µs Switching Time (Note 1) tR Rise Time Figure 1, C L = 2500 pF — 25 35 nsec tF Fall Time Figure 1, C L = 2500 pF — 25 35 nsec tD1 Delay Time Figure 1 — 55 75 nsec tD2 Delay Time Figure 1 — 55 75 nsec Power Supply IS Power Supply Current V IN = 3V — 0.45 1.5 mA VIN = 0V — 55 150 µA VDD Operating Input Voltage 4.5 — 18 V ABSOLUTE MAXIMUM RATINGS* Power Dissipation, TA ≤ 70°C Package Power Dissipation (T A ≤ 70°C) Derating Factors (To Ambient) Thermal Impedances (To Case) Operating Temperature Range (Ambient) *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

4-227TELCOM SEMICONDUCTOR, INC. NOTE: 1. Switching times guaranteed by design. Figure 1. Switching Time Test Circuit

4-228 TELCOM SEMICONDUCTOR, INC. TC4420 TC4429 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TYPICAL CHARACTERISTICS 1000 10,000 CAPACITIVE LOAD (pF) TIME (nsec) V = 18VDD Fall Time vs. Capacitive Load 100 V = 12VDD V = 5VDD –60 –20 20 60 100 140 TA (°C) DELAY TIME (nsec) D1t D2t Propagation Delay Time vs. Temperature 0 100 1000 10,000 CAPACITIVE LOAD (pF) SUPPLY CURRENT (mA) Supply Current vs. Capacitive Load C = 2200 pFL V = 18VDD 500 kHz 200 kHz 20 kHz V = 15VDD

35 DELAY TIME (nsec)

SUPPLY VOLTAGE (V) Propagation Delay Time vs. Supply Voltage tD2 tD1 V = 12VDD V = 5VDD 1000 10,000 CAPACITIVE LOAD (pF) V = 18VDD Rise Time vs. Capacitive Load 100TIME (nsec) 100 0 100 1000 10,000 FREQUENCY (kHz) SUPPLY CURRENT (mA) Supply Current vs. Frequency 1000 18V 10V C = 2200 pFL –60 –20 20 60 100 140 TA (°C) 57 9 1 1 1 3 1 5 V (V)DD 57 9 1 1 1 3 1 5 t RISEt TIME (nsec) Rise and Fall Times vs. Temperature C = 2200 pF V = 18VDD FALL V (V)DD C = 2200 pFL 120 100 TIME (nsec) Rise Time vs. Supply Voltage C = 4700 pFL C = 10,000 pFL C = 2200 pFL TIME (nsec) Fall Time vs. Supply Voltage C = 4700 pFL C = 10,000 pFL 100 L

4-229TELCOM SEMICONDUCTOR, INC. TC4420 TC4429 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 2.5 1.5 59 1 3 V (V)DD Low-State Output Resistance R ( )ΩOUT 100 mA 50 mA 10 mA 71 1 1 5 200 160 120 DELAY TIME (nsec) 567 1 1 1 3 15 Effect of Input Amplitude on Propagation Delay LOAD = 2200 pF INPUT 2.4V INPUT 3V INPUT 5V INPUT 8V AND 10V 8 9 10 12 14 V (V)DD

0 Crossover Area (A•S) x 10-9

Total nA•S Crossover* 8 9 10 12 14 SUPPLY VOLTAGE (V) 59 1 3 V (V)DD High-State Output Resistance R ( )ΩOUT 100 mA 50 mA10 mA 71 1 1 5 The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. TYPICAL CHARACTERISTICS (Cont.)