TC4403 TELCOM | Alldatasheet

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Technical content

4-213TELCOM SEMICONDUCTOR, INC. TC4403

APPLICATIONS

ORDERING INFORMATION

Part No. Package Range TC4403CPA 8-Pin PDIP 0 °C to 70°C TC4403EPA 8-Pin PDIP – 40 °C to +85°C TC4403MJA 8-Pin CerDIP – 55 °C to +125°C FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION (TOP VIEW ) TC4403 OUT (GND)IN (GND) GND IN (VDD ) VDD OUT (VDD ) NCNC

FEATURES

n Capacitive Inputs With 300mV Hysteresis n Both Inputs Must Be Driven to Drive Load n Low Output Leakage n High Peak Current Capability n Fast Output Rise Time n Outputs Individually Testable GENERAL DESCRIPTION The TC4403 is a modified version of the TC4425 driver, intended to drive floating or isolated loads requiring high- current pulses. The load is intended to be connected be- tween the outputs without other reference to supply or ground. Then, only when both logic inputs and the V DD input are energized, is power supplied to the load. This construc- tion allows the implementation of a wide variety of redundant input controllers. The low OFF-state output leakage and independence of the two half-circuits permit a wide variety of testing schemes to be utilized to assure functionality. The high peak current capability, short internal delays, and fast output rise and fall times ensure that sufficient power will be available to the load when it is needed. The TTL and CMOS compatible inputs allow operation from a wide variety of input devices. The ability to swing the inputs negative without affecting device performance allows negative biases to be placed on the inputs for greater safety. In addition, the capacitive nature of the inputs allows the use of series resistors on the inputs for extra noise suppression. The TC4403 is built for outstanding ruggedness and reliability in harsh applications. Input voltage excursions above the supply voltage or below ground are clamped internally without damaging the device. The output stages are power MOSFETs with high-speed body diodes to pre- vent damage to the driver from inductive kickbacks. 1.5A HIGH-SPEED, FLOATING LOAD DRIVER TC4403 300mV INPUT HYSTERESIS EFFECTIVE INPUT C = 20pF (EACH INPUT) GND IN (VDD ) IN (GND) 4 OUT (VDD ) OUT (GND) VDD TC4403-6 10/11/96

4-214 TELCOM SEMICONDUCTOR, INC. ABSOLUTE MAXIMUM RATINGS* Package Thermal Resistance Operating Temperature Range *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current – 5V ≤ VIN ≤ VDD –1000 ±10 +1000 nA Output VOH High Output Voltage V DD – 0.025 — — V VOL Low Output Voltage — — 0.025 V R OS Sourcing Output Resistance I OUT = 10mA, VDD = 18V — 2.8 5 Ω R OG Grounding Output Resistance I OUT = –10mA, VDD = 18V — 3.5 5 Ω IPK Peak Output Current — 1.5 — A Switching Time (Note 1) tR Rise Time Figure 1, C L = 1800pF — 23 35 nsec tF Fall Time Figure 1, C L = 1800pF — 25 35 nsec tD1 Delay Time Figure 1, C L = 1800pF — 33 75 nsec tD2 Delay Time Figure 1, C L = 1800pF — 38 75 nsec Power Supply IS Power Supply Current V IN = 3V (Both Inputs) — 1.5 2.5 mA VIN = 0V (Both Inputs) — 0.15 0.25 NOTE: 1. Switching times guaranteed by design. 200 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE ( °C) MAX. POWER (mW)

8 Pin DIP

8 Pin CerDIP

8 Pin SOIC

1.5A HIGH-SPEED, FLOATING LOAD DRIVER

4-215TELCOM SEMICONDUCTOR, INC. NOTE: 1. Switching times guaranteed by design. Figure 1. Switching Time Test Circuits

4-216 TELCOM SEMICONDUCTOR, INC. TC4403 1.5A HIGH-SPEED, FLOATING LOAD DRIVER TIME (nsec) Rise and Fall Times vs. Temperature TEMPERATURE ( °C) –55 –35 5 25 45 65 85 105 125–15 tRISE tFALL tRISE C = 2200pFLOAD tFALL TYPICAL CHARACTERISTICS Rise Time vs. Capacitive Load 100 1000 10,000 C (pF)LOAD 10V 15V t (nsec)RISE 100 TA = +25°C t (nsec)FALL Fall Time vs. Capacitive Load 100 1000 10,000 10V 15V 100 C (pF) LOAD TA = +25°C t (nsec) 468 1 0 1 2 14 16 18 Rise Time vs. Supply Voltage VDD RISE 100 1000pF 4700pF 3300pF 470pF 1500pF TA = +25°C 2200pF VDD = 18V Propagation Delay vs. Input Amplitude 100

20 DELAY TIME (nsec)

INPUT (V) V = 10VDD C = 2200pFLOAD 0123456789 1 0 1 1 1 2 tD2 tD1 t (nsec) 468 1 0 1 2 14 16 18 Fall Time vs. Supply Voltage FALL 100 VDD 1000pF 1500pF TA = +25°C4700pF 3300pF 2200pF 470pF

4-217TELCOM SEMICONDUCTOR, INC. TYPICAL CHARACTERISTICS (Cont.) 5.7 5.1 4.5 3.9 3.3 2.7 2.1 1.5 75 150 225 300

75 HOURS

2.768V CLOSED CIRCUIT VOLTAGE HOURS OF SERVICE 2.727V Typical Discharge Characteristics –55 –35 –15 5 25 45 65 85 105 125 Quiescent Current vs. Temperature I (mA)QUIESCENT TEMPERATURE ( °C) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 INPUTS = 1 INPUTS = 0 TYPICAL APPLICATION POWER 1 MΩ R LOADTC4403 –15V 1 MΩ +15V R T R T TC4422 FIRE ARM Delay Time vs. Supply Voltage 4 6 8 1 01 21 41 61 8 DELAY TIME (nsec) DDV C = 2200pFLOAD tD1 tD2 TA = +25°C Delay Time vs. Temperature TEMPERATURE ( °C) DELAY TIME (ns) –55 –35 –15 5 25 45 65 85 105 125 C = 2200pFLOAD tD1 tD2 0.1 0.01 4 6 8 1 01 21 41 61 8 I (mA)QUIESCENT Quiescent Current vs. Voltage DDV BOTH INPUTS = 1 BOTH INPUTS = 0 AT = +25°C TC4403 1.5A HIGH-SPEED, FLOATING LOAD DRIVER