TC426IJA

TC426 TELCOM | Alldatasheet

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4-169TELCOM SEMICONDUCTOR, INC. TC426 TC427 TC428 PIN CONFIGURATIONS (DIP and SOIC) TC426 NC OUT A OUT B NC IN A GND IN B VDD NC = NO INTERNAL CONNECTION 2, 4 7, 5 INVERTING TC427 NC OUT A OUT B NC IN A GND IN B 2, 4 7, 5 NONINVERTING TC428 NC OUT A OUT B NC IN A GND IN B VDD VDD COMPLEMENTARY INPUT 2.5mA 500µA INVERTING OUTPUT NONINVERTING OUTPUT (TC426)(TC427) TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

FEATURES

n TTL/CMOS Input Compatible n Available in Inverting and Noninverting Configurations n Current Consumption n Single Supply Operation n Pinout Equivalent of DS0026 and MMH0026 n Latch-Up Resistant: Withstands > 500mA Reverse Current FUNCTIONAL BLOCK DIAGRAM Note: The TC428 has one inverting and one noninverting driver. Ground any unused driver input. TC426/7/8-7 10/11/96 GENERAL DESCRIPTION The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25 mV of ground or positive supply. The low impedance, high-current driver outputs swing a 1000pF load 18V in 30nsec. The unique current and voltage drive qualities make the TC426/TC427/TC428 ideal power MOSFET drivers, line drivers, and DC-to-DC converter building blocks. Input logic signals may equal the power supply volt- age. Input current is a low 1µA, making direct interface to CMOS/bipolar switch-mode power supply control ICs pos- sible, as well as open-collector analog comparators. Quiescent power supply current is 8mA maximum. The TC426 requires 1/5 the current of the pin-compatible bipo- lar DS0026 device. This is important in DC-to-DC con- verter applications with power efficiency constraints and high-frequency switch-mode power supply applications. Qui- escent current is typically 6mA when driving a 1000pF load 18V at 100kHz. The inverting TC426 driver is pin-compatible with the bipolar DS0026 and MMH0026 devices. The TC427 is noninverting; the TC428 contains an inverting and non- inverting driver. Other pin compatible driver families are the TC1426/ 27/28, TC4426/27/28, and TC4426A/27A/28A.

ORDERING INFORMATION

Part No. Package Configuration Range TC426COA 8-Pin SOIC Inverting 0 °C to +70°C TC426CPA 8-Pin PDIP Inverting 0 °C to +70°C TC426EOA 8-Pin SOIC Inverting –40 °C to +85°C TC426EPA 8-Pin SOIC Complementary –40 °C to +85°C TC426IJA 8-Pin CerDIP Inverting –25 °C to +85°C TC426MJA 8-Pin CerDIP Inverting –55 °C to +125°C TC427COA 8-Pin SOIC Noninverting 0 °C to +70°C TC427CPA 8-Pin PDIP Noninverting 0 °C to +70°C TC427EOA 8-Pin SOIC Noninverting –40 °C to +85°C TC427EPA 8-Pin SOIC Complementary –40 °C to +85°C TC427IJA 8-Pin CerDIP Noninverting –25 °C to +85°C TC427MJA 8-Pin CerDIP Noninverting –55 °C to +125°C TC428COA 8-Pin SOIC Complementary 0 °C to +70°C TC428CPA 8-Pin PDIP Complementary 0 °C to +70°C TC428EOA 8-Pin SOIC Complementary –40 °C to +85°C TC428EPA 8-Pin SOIC Complementary –40 °C to +85°C TC428IJA 8-Pin CerDIP Complementary –25 °C to +85°C TC428MJA 8-Pin CerDIP Complementary –55 °C to +125°C

4-170 TELCOM SEMICONDUCTOR, INC. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1, High Input Voltage 2.4 — — V VIL Logic 0, Low Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD –1 — 1 µA Output VOH High Output Voltage V DD – 0.025 — — V VOL Low Output Voltage — — 0.025 V R OH High Output Resistance I OUT = 10 mA, VDD = 18V — 10 15 Ω R OL Low Output Resistance I OUT = 10 mA, VDD = 18V — 6 10 Ω IPK Peak Output Current — 1.5 — A Switching Time (Note 1) tR Rise Time Test Figure 1/2 — — 30 nsec tF Fall Time Test Figure 1/2 — — 30 nsec tD1 Delay Time Test Figure 1/2 — — 50 nsec tD2 Delay Time Test Figure 1/2 — — 75 nsec Power Supply IS Power Supply Current V IN = 3V (Both Inputs) — — 8 mA VIN = 0V (Both Inputs) — — 0.4 mA ABSOLUTE MAXIMUM RATINGS* Power Dissipation (TA ≤ 70°C) Derating Factor Operating Temperature Range NOTE: 1. Switching times guaranteed by design. ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Input VIH Logic 1, High Input Voltage 2.4 — — V VIL Logic 0, Low Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD –10 — 10 µA Output VOH High Output Voltage V DD – 0.025 — — V VOL Low Output Voltage — — 0.025 V R OH High Output Resistance I OUT = 10 mA, VDD = 18V — 13 20 Ω R OL Low Output Resistance I OUT = 10 mA, VDD = 18V — 8 15 Ω Switching Time (Note 1) tR Rise Time Test Figure 1/2 — — 60 nsec tF Fall Time Test Figure 1/2 — — 30 nsec tD1 Delay Time Test Figure 1/2 — — 75 nsec tD2 Delay Time Test Figure 1/2 — — 120 nsec Power Supply IS Power Supply Current V IN = 3V (Both Inputs) — — 12 mA VIN = 0V (Both Inputs) — — 0.6 mA

4-171TELCOM SEMICONDUCTOR, INC. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may effect device reliability. SUPPLY BYPASSING Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 1000-pF load to18V in 25nsec requires an 0.72A current from the device power supply. To guarantee low supply impedance over a wide fre- quency range, a parallel capacitor combination is recom- mended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1 µF film capacitor in parallel with one or two 0.1µF ceramic disk capacitors normally provides adequate bypassing. GROUNDING The TC426 and TC428 contain inverting drivers. Ground potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Individual ground returns for the input and output circuits or a ground plane should be used. INPUT STAGE The input voltage level changes the no-load or quies- cent supply current. The N-channel MOSFET input stage transistor drives a 2.5mA current source load. With a logic "1" input, the maximum quiescent supply current is 8 mA. Logic "0" input level signals reduce quiescent current to 0.4 mA maximum. Minimum power dissipation occurs for logic "0" inputs for the TC426/427/428. Unused driver inputs must be connected to V DD or GND. The drivers are designed with 100 mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresh- olds are approximately 1.5V, making the device TTL com- patible over the 4.5V to 18V supply operating range. Input current is less than 1 µA over this range. The TC426/427/428 may be directly driven by the TL494, SG1526/1527, SG1524, SE5560, and similar switch- mode power supply integrated circuits. POWER DISSIPATION The supply current vs frequency and supply current vs capacitive load characteristic curves will aid in determining power dissipation calculations. The TC426/427/428 CMOS drivers have greatly re- duced quiescent DC power consumption. Maximum quies- cent current is 8 mA compared to the DS0026 40 mA specification. For a 15V supply, power dissipation is typi- cally 40 mW. Two other power dissipation components are:

• Output stage AC and DC load power.
• Transition state power. Output stage power is: Po = P DC + PAC = Vo (IDC ) + f CL VS Where: Vo = DC output voltage I DC = DC output load current f = Switching frequency Vs = Supply voltage In power MOSFET drive applications the P DC term is negligible. MOSFET power transistors are high imped- ance, capacitive input devices. In applications where resis- tive loads or relays are driven, the P DC component will normally dominate. The magnitude of PAC is readily estimated for several cases: A. B. 1. f = 20kHZ 1. f = 200kHz 2. C L =1000pf 2. C L =1000pf 3. Vs = 18V 3. VS =15V 4. P AC = 65mW 4. P AC = 45mW During output level state changes, a current surge will flow through the series connected N and P channel output MOSFETS as one device is turning "ON" while the other is turning "OFF". The current spike flows only during output transitions. The input levels should not be maintained be- tween the logic "0" and logic "1" levels. Unused driver inputs must be tied to ground and not be allowed to float. Average power dissipation will be reduced by mini- mizing input rise times. As shown in the characteristic curves, average supply current is frequency dependent.

4-172 TELCOM SEMICONDUCTOR, INC. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TYPICAL CHARACTERISTICS 123456 SUPPLY VOLTAGE (V) SUPPLY CURRENT (mA) Supply Voltage vs Quiescent Supply Current NO LOAD BOTH INPUTS LOGIC "1" T = +25°CA SUPPLY VOLTAGE (V) 50 100 150 200 250 300 SUPPLY CURRENT ( µA) Supply Voltage vs Quiescent Supply Current NO LOAD BOTH INPUTS LOGIC "0" T = +25°CA 100 10 1000 10K TIME (nsec) CAPACITIVE LOAD (pF) Rise and Fall Times vs Capacitive Load 100 –25 0 25 150 TIME (nsec) Rise and Fall Times vs Temperature 50 75 100 125 TEMPERATURE ( °C) Rt Ft DELAY TIME (nsec) Delay Times vs Supply Voltage SUPPLY VOLTAGE (V) 51 0 1 5 2 0 D1t D2t C L TA = 1000pF = +25°C 0–25 50 100 150 DELAY TIME (nsec) TEMPERATURE ( °C) Delay Times vs Temperature 100 25 75 125 D1t C L VDD = 1000pF = 18V D2t SUPPLY CURRENT (mA) Supply Current vs Capacitive Load 400kHz 200kHz 20kHz TA VDD = +25°C = 18V 100 1000 10K CAPACITIVE LOAD (pF) 0.96 0.72 0.48 0.24 0 10 OUTPUT VOLTAGE (V) Low Output vs Voltage 1.20 TA= +25°C 20 30 40 50 60 70 80 90 100 CURRENT SUNK (mA) VDD = 5V 10V 15V 1.76 1.32 0.88 0.44 0 10 High Output vs Voltage 2.20 TA= +25°C 20 30 40 50 60 70 80 90 100 CURRENT SOURCED (mA) 18V VDD = 8V V – V (V)DD OUT 13V SUPPLY CURRENT (mA) Supply Current vs Frequency 10 100 1000 FREQUENCY (kHz) C L TA = 1000pF = +25°C VDD = 18V 10V 0 5 10 15 20 TIME (nsec) SUPPLY VOLTAGE (V) Rt Ft C L TA = 1000pF = +25°C Rise and Fall Times vs Supply Voltage C L VDD = 1000 pF = 18V Rt Ft TA VDD = +25°C = 18V 200 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE ( °C) MAX. POWER (mW)

8 Pin DIP

8 Pin CerDIP

8 Pin SOIC

4-173TELCOM SEMICONDUCTOR, INC. TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS OUTPUTINPUT 0.1µF VDD +5V INPUT 10% 90% 10% 90% 10% 90%18V OUTPUT tD1 tF t tD2 C = 1000pFL 1µF = 18V TC426 (1/2 TC428) R INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec OUTPUTINPUT 90% 10% 10% 10% tD1 tR tD2 tF 90% C = 1000pFL TC427 (1/2 TC428) +5V INPUT 18V OUTPUT 90% 0.1µF VDD 1µF = 18V INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec VOLTAGE INVERTER + 15V 0.1µF 4.7 µF 10µF 47µF+ +– 1N4001 1N4001 VOUT f = 10kHzIN TC426 -10 -12 0 10 20 30 40 50 60 70 80 90 I (mA)OUT -11 -13 -14 100 V (V)OUT + 15V 0.1µF 4.7µF 10µF 47µF +– 1N4001 1N4001 VOUT f = 10kHzIN 29. 27. 25. 23. 0 10 20 30 40 50 60 70 80 90 I (mA)OUT 28. 26. 24. 22. 30. 100 V (V)OUT TC426 Test Figure 1. Inverting Driver Switching Time Test Circuit Test Figure 2. Noninverting Driver Switching Time Test Circuit VOLTAGE DOUBLER