TBY228 SIPOWER | Alldatasheet
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Power Semiconductor Technology Damper Diodes m@ Features Outline Dimensions and Mark ele caw 5.0A Unit: mm eo VarM 1500V > ot ,D<2.0us e High reliability Cathode Mark 5.2402 ae Type \\ 1.3401 @ Applications \\ t 1.3+0.05 — -———, ¢ Damping in Horizontal Scanning Circuits — 4 I ® 06Amin 91+02 HLimiting Values (Absolute Maximum Rating) Average Forward Current 5.0 (50Hz Half-sine wave, Resistance load, Tixea=50°C) Surge(Non-repetitive)Forward Current 50 (60H; Half-sine wave, 1 cycle,T.=25°C) Junction and Storage Temperature -40 ~ +150 Operating Ambient Temperature -40 ~ +150 Electrical Characteristics (1,=25°C Unless otherwise specified ) ee twee | T=25C Peak Reverse Current RRM = = PeskReeme Curent FEA) uA | Vaan | T.=100°C 1F=0.5A Ipv=1A Re Re Ti aq) IF IRV Ipp=0.25A, . Raya Between junction and ambient Thermal Resistance , (Typical) CW Row Between junction and lead 10 http://www.sipower-inc.com
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| nonepetive at Tar25'C = A TUIIN SALIH 10 — sora 0 o LLM TA 0 25 50 75 100 125 150 1 10 100 Ta CC) Number of Cycles IF av —Ta Derating Surge Forward Current Capability D ly t Va al x 7 ke Ir Diagram of Circuit and Testing Wave form of Reverse Recovery Time t,, http://www.sipower-inc.com