T15XB SIPOWER | Alldatasheet
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© siPower T15XB (20~80) Power Semiconductor Technology Bridge Rectifier Outline Dimensions and Mark @ Features 58 Units mm el, 15.0A « Ver 200V~800V ‘ype « Clos(example) 020.3 a (seas Glass passivated chip al ~ — e High surge forward current capability y 15XB60 0530 we 30x45" / & 3 a fe Lng m= Applications 2s102 Le : 7 Joy i Fy G i 1 phi Brid . eneral Purpose phase Bridge 22402 le a sy il rectifier applications Bl ¢ —_>| v0.48 S| 8 ae | om = o7t0.4 | H Limiting Values (Absolute Maximum Rating) Conditions [20 |40 [60 | 80] longotempaaue | T |e] | to luunontenpnie | fet |nepsiePeacRevee vatoge | Yow | ¥ | pe ao A With Heatsink T.=110°C Average Rectified Output Current 50Hz sine wave, R-load, 32 Without Heatsink Ta=25'C| " . leu | A . non 200 Surge(Non-repetitive)Forward Current 50Hz sine wave, 1 cycle, T.=25°C Pt | A'S | ams<t<8.3ms T)=26'C Rating of per diode Current Squared Time poms HFe9 © Rating of Pe Dielectric Strength Terminals to case, AC 1 minute Lwowingtimve | TOR er] aconmanatne: ignem | Lt] Electrical Characteristics (T,=25°C Unless otherwise specified) lecarrovese cures | '™ | ** | vavey Puce messrement Rang ofperdade | "| http://www.sipower-inc.com
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