TB0640M LITEON | Alldatasheet

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FEATURES

Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A @8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM - 58 to 320 Volts IPP - 50 Amperes MAXIMUM RATINGS MAXIMUM RATED SURGE WAVEFORM WAVEFORM THERMAL RESISTANCE ℃/W UNITSYMBOL %/℃ Junction to leads CHARACTERISTICS Typical positive temperature coefficient for brekdown voltage Rth(J-L) △VBR/△TJ 0.1 VALUE 100Junction to ambient on print circuit (on recommended pad layout) Rth(J-A) ℃/W 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE IPP (A) 300 250 150 100 IPP, PEAK PULSE CURRENT (%) 100 tr tp TIME Half value Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value SEMICONDUCTOR LITE-ON Bi-Directional UNITSYMBOL Non-repetitive peak impulse current @ 10/1000us CHARACTERISTICS storage temperature range IPP ITSM TSTG A A -55 to +150 VALUE Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range TJ -40 to +150 ℃ SMB All Dimensions in millimeter SMB DIM. MIN. MAX. A C D E F G H B 4.06 4.57 3.94 3.30 1.96 2.21 0.31 0.15 5.21 5.59 0.05 0.20 2.01 2.62 0.76 1.52 CB A H E F G D REV. 0, 09-Oct-2001, KSWB06

Leakage current at stand-off voltage Breakdown voltage Breakdown current Breakover voltage Holding current Note: 1IH VT IPP CO On state voltage Peak pulse current Off state capacitance Note: 2 Breakover current VDRM IDRM VBR IBR VBO IBO IH VT IPP V I NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias. TB0640M TB0720M TB0900M TB1100M TB1300M TB1500M TB1800M TB2300M TB2600M TB3100M TB3500M 140 120 220 160 190 275 320 180 130 160 300 220 265 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 150 150 150 150 150 150 150 150 150 150 150 140 140 140 Max PARAMETER SYMBOL UNITS LIMIT RATED REPETITIVE OFF-STATE VOLTAGE OFF-STATE LEAKAGE CURRENT @ VDRM BREAKOVER VOLTAGE ON-STATE VOLTAGE @ IT=1.0A HOLDING CURRENT OFF-STATE CAPACITANCE Max Max Max Min Max Min Typ VDRM IDRM VBO VT IBO-I BO+ IH- Co Volts uA Volts Volts mA mA mA pF ELECTRICAL CHARACTERISTICS @ TA= 25℃℃℃℃ unless otherwise specified TB0640M thru TB3500M BREAKOVER CURRENT 800 800 800 800 800 800 800 800 800 800 800 Max IH+ mA 800 800 800 800 800 800 800 800 800 800 800 REV. 0, 09-Oct-2001, KSWB06

FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATUREI(DRM), OFF STATE CURRENT (uA) TJ, JUNCTION TEMPERATURE (℃) VDRM=50V 100 1.0 0.1 0.001 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) -50 -25 0 25 50 75 125 150 NORMALIZED BREAKDOWN VOLTAGE 1.20 1.10 1.05 1.0 0.90 0.95 1.15 VBR (TJ) VBR (TJ=25℃) 100 175 FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE (℃) -50 -25 0 25 50 75 125 150 NORMALIZED BREAKOVER VOLTAGE 1.10 1.05 1.0 0.95 100 175 FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE V (T); ON STATE VOLTAGE I(T), ON STATE CURRENT FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE TJ, JUNCTION TEMPERATURE (℃) NORMALIZED HOLDING CURRENT FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE VR, REVERSE VOLTAGE NORMALIZE CAPACITANCE FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS RATING AND CHARACTERISTICS CURVES TB0640M thru TB3500M -50 -25 0 25 50 75 100 125 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1 10 100 0.1 Tj =25℃ f=1MHz VRMS = 1V CO(VR) CO(VR = 1V) IH (TJ) IH (TJ=25℃) VBO(TJ) VBO (TJ=25℃) 1 10 100 TJ = 25℃ REV. 0, 09-Oct-2001, KSWB06

The PTC (Positive Temperature Coefficient) is an overcurrent protection device TELECOM EQUIPMENT E.G. MODEM FUSE TSPD 1 RING TIP TELECOM EQUIPMENT E.G. LINE CARD RING TIP TSPD 2 TSPD 3 PTC PTC TSPD 1 TELECOM EQUIPMENT E.G. ISDN TSPD 1 RING TIP TSPD 2 PTC PTC TYPICAL CIRCUIT APPLICATIONS TB0640M thru TB3500M REV. 0, 09-Oct-2001, KSWB06