TA4013FU TOSHIBA | Alldatasheet
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TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES. @ High Power : Po1dB = 3dBmW @ Wide Band : f = 1.7 GHz (3dB down) @ Operating Supply Voltage : Vcc = 1.5~3V SSOP5-P-0.65 MAXIMUM RATINGS (Ta = 25°C) Weight : 0.006 g (Typ.) CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage [Vee [4 |v] Total Power Dissipation Pp (Note 1) Operating Temperature -40~85 Storage Temperature =55~150 (Note 1) : When mounted on the glass epoxy of 2.5cm? x 1.6t PIN ASSIGNMENT COLLECTOR OUT Tl “Tf ooo IN GND Vcc CAUTION This device electrostatic sensitivity. Please handle with caution. 980910EBA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. or products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result, from its use. No license is granted by implication of otherwise under any. intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-08-25 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C, Zg = ZI = 50) CHARACTERISTIC SYMBOL TEST CONDITION | mun. | tye. | max. | unr | Veg = 3, Non carrier aos ma] Yee = ov Nets 2} bis [ 17] — | one | Bei [vee = 2V, f= 1GHz Le | wp — | «| Vee =2V. f= GHz b= as, 6] a fsoiation | Bra [vee = 2, f= 1 Giz b= [-%[— | a Vee = 2V, t= 1 GHz b= [=ss[— | «| Output Return Loss [s22?_ [Vcc = 2V, f = 1GHz | — [| -15 | — | a | Output Power at 1dB Gain potdB |Vcc = 2V, f = 1GHz |= | 2] — |aemw| Compression (Note 2) : BW is the frequency of 3dB down from |S21|? at 1 GHz. 1999-08-25 2/4
RF TEST CIRCUIT (TOP VIEW) 1000 pF RF IN O———— [+] L one, 100 pF 1000 pF 1000 pF 10000 pF a tO Fr OUT fs) L:3nh EQUIVALENT CIRCUIT a 4 1999-08-25 3/4
SSOP5-P-0.65 Unit : mm 2.1+0.1 1.25+0.1 o ——$— to) alo © 1-4 LW) =e o| 3 7 +i R 2-—4 NA o| 2 S Nir 3-H 7” 8 4 lo) ite) for) fe) o S fan) Weight : 0.006 g (Typ.) 1999-08-25 4/4