T8UB SIPOWER | Alldatasheet
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© siPower TBUB (20~80) Power Semiconductor Technology Bridge Rectifier @ Features Outline Dimensions and Mark el, 8.0A Unit: mm 2U Date Code(example) e Varm 200V~800V Type . Class(example) 31202 Glass passivated chip ] seu : « High surge forward current capability ] | TsUB80 0530 a Small size a Elee “poe an gf wane tT @ Applications FS e General purpose 1 phase Bridge ~ } 3 rectifier applications q a2 0.76201 Ti Limiting Values (Absolute Maximum Rating) T8UB Conditions | 20 | 40 | 60 | 80 | lanintra | {ef Te Junction Temperature Average Rectified Output |, a | 80Hz sine wave| Without heatsink T4=25°C Current Reload, With heatsink T.=126°C urrent 2 2, Current Squared Time 3ms<t<8.3ms Tj=25'C Rating of per diode m Electrical Characteristics (1,=25'C Unless otherwise specified) | tem | symbot|_ unit | Test Condition Lox | [rostrowsecuren | to | +A | mmren ringers | | Peak Reverse Current measurement, Rating of per diode http://www.sipower-inc.com
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